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Title: Influence of isotopic substitution and He coimplantation on defect complexes and voids induced by H ions in silicon

Abstract

We present a detailed study of the comparative thermal evolutions of H- and D-related defects in silicon implanted with 2x10{sup 16} H or D/cm{sup 2}, or coimplanted with 0.25x10{sup 16} He/cm{sup 2} and 0.7x10{sup 16} H/cm{sup 2}, in both orders. By using ion channeling, positron annihilation spectroscopy, and Raman scattering spectroscopy, we found that hydrogen and deuterium interact remarkably differently with primary point defects. He post implantation is found to destroy vacancies highly passivated by hydrogen, whereas He preimplantation accelerates their evolution into atomically smooth internal surfaces. By comparing different systems, subtle points in the interactions between the implanted atoms and point defects are evidenced, and critical defect complexes involved in silicon blistering are identified. Finally, the origins of the isotopic and synergistic effects observed in low energy ion-induced silicon blistering are discussed.

Authors:
; ; ; ;  [1];  [2];  [2]
  1. INRS-EMT, Universite du Quebec, 1650 Boulevard Lionel-Boulet, Varennes, Quebec, J3X 1S2 (Canada)
  2. (Canada)
Publication Date:
OSTI Identifier:
20976698
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review. B, Condensed Matter and Materials Physics; Journal Volume: 75; Journal Issue: 7; Other Information: DOI: 10.1103/PhysRevB.75.075201; (c) 2007 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNIHILATION; DEFECTS; DEUTERIUM; HYDROGEN; HYDROGEN IONS; ION CHANNELING; ION IMPLANTATION; ISOTOPIC EXCHANGE; POSITRONS; RAMAN EFFECT; RAMAN SPECTRA; SEMICONDUCTOR MATERIALS; SILICON; SPECTROSCOPY; SURFACES; VACANCIES; VOIDS

Citation Formats

Moutanabbir, O., Terreault, B., Chicoine, M., Schiettekatte, F., Simpson, P. J., Departement de physique, Universite de Montreal, Montreal, Quebec, H3T 1J4, and Department of Physics and Astronomy, University of Western Ontario, London, Ontario, N6A 3K7. Influence of isotopic substitution and He coimplantation on defect complexes and voids induced by H ions in silicon. United States: N. p., 2007. Web. doi:10.1103/PHYSREVB.75.075201.
Moutanabbir, O., Terreault, B., Chicoine, M., Schiettekatte, F., Simpson, P. J., Departement de physique, Universite de Montreal, Montreal, Quebec, H3T 1J4, & Department of Physics and Astronomy, University of Western Ontario, London, Ontario, N6A 3K7. Influence of isotopic substitution and He coimplantation on defect complexes and voids induced by H ions in silicon. United States. doi:10.1103/PHYSREVB.75.075201.
Moutanabbir, O., Terreault, B., Chicoine, M., Schiettekatte, F., Simpson, P. J., Departement de physique, Universite de Montreal, Montreal, Quebec, H3T 1J4, and Department of Physics and Astronomy, University of Western Ontario, London, Ontario, N6A 3K7. Thu . "Influence of isotopic substitution and He coimplantation on defect complexes and voids induced by H ions in silicon". United States. doi:10.1103/PHYSREVB.75.075201.
@article{osti_20976698,
title = {Influence of isotopic substitution and He coimplantation on defect complexes and voids induced by H ions in silicon},
author = {Moutanabbir, O. and Terreault, B. and Chicoine, M. and Schiettekatte, F. and Simpson, P. J. and Departement de physique, Universite de Montreal, Montreal, Quebec, H3T 1J4 and Department of Physics and Astronomy, University of Western Ontario, London, Ontario, N6A 3K7},
abstractNote = {We present a detailed study of the comparative thermal evolutions of H- and D-related defects in silicon implanted with 2x10{sup 16} H or D/cm{sup 2}, or coimplanted with 0.25x10{sup 16} He/cm{sup 2} and 0.7x10{sup 16} H/cm{sup 2}, in both orders. By using ion channeling, positron annihilation spectroscopy, and Raman scattering spectroscopy, we found that hydrogen and deuterium interact remarkably differently with primary point defects. He post implantation is found to destroy vacancies highly passivated by hydrogen, whereas He preimplantation accelerates their evolution into atomically smooth internal surfaces. By comparing different systems, subtle points in the interactions between the implanted atoms and point defects are evidenced, and critical defect complexes involved in silicon blistering are identified. Finally, the origins of the isotopic and synergistic effects observed in low energy ion-induced silicon blistering are discussed.},
doi = {10.1103/PHYSREVB.75.075201},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 7,
volume = 75,
place = {United States},
year = {Thu Feb 15 00:00:00 EST 2007},
month = {Thu Feb 15 00:00:00 EST 2007}
}