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Title: Local coordination structure and electronic structure of the large electron mobility amorphous oxide semiconductor In-Ga-Zn-O: Experiment and ab initio calculations

Abstract

Ionic amorphous oxide semiconductors (IAOSs) are new materials for flexible thin film transistors that exhibit field-effect mobilities of {approx}10 cm{sup 2} V{sup -1} s{sup -1} [K. Nomura et al., Nature 488, 432 (2004)]. The local coordination structure in an IAOS, In-Ga-Zn-O (a-IGZO), was examined using extended x-ray absorption fine structure analysis combined with ab initio calculations. The short-range ordering and coordination structures in a-IGZO are similar to those in the corresponding crystalline phase, InGaZnO{sub 4}, and edge-sharing structures consisting of In-O polyhedra remain in the amorphous structure. The In{sup 3+} 5s orbitals form an extended state with a band effective mass of {approx}0.2m{sub e} at the conduction band bottom.

Authors:
; ;  [1];  [1];  [2];  [3];  [1];  [2];  [2]
  1. ERATO-SORST, JST, in Frontier Collaborative Research Center, Mail Box S2-13, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan)
  2. (Japan)
  3. SPring-8, Japan Synchrotron Radiation Research Institute, 1-1-1 Kouto, Mikazuki-cho, Hyogo 679-5198 (Japan)
Publication Date:
OSTI Identifier:
20976656
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review. B, Condensed Matter and Materials Physics; Journal Volume: 75; Journal Issue: 3; Other Information: DOI: 10.1103/PhysRevB.75.035212; (c) 2007 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; ABSORPTION SPECTROSCOPY; EFFECTIVE MASS; ELECTRON MOBILITY; ELECTRONIC STRUCTURE; FINE STRUCTURE; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; INDIUM IONS; OXIDES; SEMICONDUCTOR MATERIALS; THIN FILMS; TRANSISTORS; X RADIATION; X-RAY SPECTROSCOPY

Citation Formats

Nomura, Kenji, Ohta, Hiromichi, Hirano, Masahiro, Kamiya, Toshio, Materials and Structures Laboratory, Mail Box R3-1, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Uruga, Tomoya, Hosono, Hideo, Materials and Structures Laboratory, Mail Box R3-1, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, and Frontier Collaborative Research Center, Mail Box S2-13, Tokyo Institute of Technology, 4259, Nagatsuta, Midori-ku, Yokohama 226-8503. Local coordination structure and electronic structure of the large electron mobility amorphous oxide semiconductor In-Ga-Zn-O: Experiment and ab initio calculations. United States: N. p., 2007. Web. doi:10.1103/PHYSREVB.75.035212.
Nomura, Kenji, Ohta, Hiromichi, Hirano, Masahiro, Kamiya, Toshio, Materials and Structures Laboratory, Mail Box R3-1, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Uruga, Tomoya, Hosono, Hideo, Materials and Structures Laboratory, Mail Box R3-1, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, & Frontier Collaborative Research Center, Mail Box S2-13, Tokyo Institute of Technology, 4259, Nagatsuta, Midori-ku, Yokohama 226-8503. Local coordination structure and electronic structure of the large electron mobility amorphous oxide semiconductor In-Ga-Zn-O: Experiment and ab initio calculations. United States. doi:10.1103/PHYSREVB.75.035212.
Nomura, Kenji, Ohta, Hiromichi, Hirano, Masahiro, Kamiya, Toshio, Materials and Structures Laboratory, Mail Box R3-1, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Uruga, Tomoya, Hosono, Hideo, Materials and Structures Laboratory, Mail Box R3-1, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, and Frontier Collaborative Research Center, Mail Box S2-13, Tokyo Institute of Technology, 4259, Nagatsuta, Midori-ku, Yokohama 226-8503. Mon . "Local coordination structure and electronic structure of the large electron mobility amorphous oxide semiconductor In-Ga-Zn-O: Experiment and ab initio calculations". United States. doi:10.1103/PHYSREVB.75.035212.
@article{osti_20976656,
title = {Local coordination structure and electronic structure of the large electron mobility amorphous oxide semiconductor In-Ga-Zn-O: Experiment and ab initio calculations},
author = {Nomura, Kenji and Ohta, Hiromichi and Hirano, Masahiro and Kamiya, Toshio and Materials and Structures Laboratory, Mail Box R3-1, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 and Uruga, Tomoya and Hosono, Hideo and Materials and Structures Laboratory, Mail Box R3-1, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 and Frontier Collaborative Research Center, Mail Box S2-13, Tokyo Institute of Technology, 4259, Nagatsuta, Midori-ku, Yokohama 226-8503},
abstractNote = {Ionic amorphous oxide semiconductors (IAOSs) are new materials for flexible thin film transistors that exhibit field-effect mobilities of {approx}10 cm{sup 2} V{sup -1} s{sup -1} [K. Nomura et al., Nature 488, 432 (2004)]. The local coordination structure in an IAOS, In-Ga-Zn-O (a-IGZO), was examined using extended x-ray absorption fine structure analysis combined with ab initio calculations. The short-range ordering and coordination structures in a-IGZO are similar to those in the corresponding crystalline phase, InGaZnO{sub 4}, and edge-sharing structures consisting of In-O polyhedra remain in the amorphous structure. The In{sup 3+} 5s orbitals form an extended state with a band effective mass of {approx}0.2m{sub e} at the conduction band bottom.},
doi = {10.1103/PHYSREVB.75.035212},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 3,
volume = 75,
place = {United States},
year = {Mon Jan 15 00:00:00 EST 2007},
month = {Mon Jan 15 00:00:00 EST 2007}
}