Interaction of electron irradiation with nitrogen-related deep levels in InGaAsN

Journal Article · Mon Jul 23 00:00:00 EDT 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2759950· OSTI ID:20972024

Khan, Aurangzeb; Gou, J; Imazumi, M; Yamaguchi, M ^[1]

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1. Department of Electrical and Computer Engineering, University of South Alabama, Mobile, Alabama 36688 (United States)

The authors present an investigation of 1 MeV electron irradiation-induced defects in p-InGaAsN and their impact on nitrogen-related defects. A hitherto existing nitrogen-related electron trap E1 (0.20 eV) shows a significant increase in concentration after 1 MeV electron irradiation. In addition, 1 MeV electron irradiation induced a hole trap H1 at energy of about 0.75 eV above the valence band. Isothermal annealing analysis indicates that E1 is a complex defect involving an interstitial or a substitutional atom in combination with some other defect, whose concentration is enhanced by irradiation. A correlation exists between the recovery of free carrier concentration and recovery of the E1 center to preradiation concentrations, which indicates the possibility of the E1 as an acceptorlike center.

• OSTI ID: 20972024
• Journal Information: Applied Physics Letters, Vol. 91, Issue 4; Other Information: DOI: 10.1063/1.2759950; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CARRIER DENSITY
CHARGE CARRIERS
ELECTRON BEAMS
ELECTRONS
EV RANGE
GALLIUM ARSENIDES
GALLIUM NITRIDES
HOLES
INDIUM ARSENIDES
INDIUM NITRIDES
INTERSTITIALS
IRRADIATION
MEV RANGE 01-10
NITROGEN
SEMICONDUCTOR MATERIALS
TRAPS