Epitaxial growth of ZrO{sub 2} on GaN templates by oxide molecular beam epitaxy

Journal Article · Mon Jul 09 00:00:00 EDT 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2753719· OSTI ID:20972011

Xing, Gu; Izyumskaya, Natalia; Avrutin, Vitaly; Bo, Xiao; Morkoc, Hadis ^[1]

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1. Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)

Molecular beam epitaxial growth of ZrO{sub 2} has been achieved on GaN (0001)/c-Al{sub 2}O{sub 3} substrates employing a reactive H{sub 2}O{sub 2} oxygen source. A low temperature buffer followed by in situ annealing and high temperature growth has been employed to attain monoclinic (100)-oriented ZrO{sub 2} thin films. The typical full width at half maximum of a 30-nm-thick ZrO{sub 2} (100) film rocking curves is 0.4 arc deg and the root-mean-square surface roughness is {approx}4 A ring . {omega}-2{theta} and pole figure x-ray diffraction patterns confirm the monoclinic structure of ZrO{sub 2}. Data support an in-plane epitaxial relationship of ZrO{sub 2} [010] parallel GaN[112] and ZrO{sub 2} [001] parallel GaN[1100]. X-ray diffraction and reflection high-energy electron diffraction analyses reveal in-plane compressive strain, which is mainly due to the lattice mismatch.

• OSTI ID: 20972011
• Journal Information: Applied Physics Letters, Vol. 91, Issue 2; Other Information: DOI: 10.1063/1.2753719; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
ANNEALING
CRYSTAL DEFECTS
CRYSTAL GROWTH
DIELECTRIC MATERIALS
ELECTRON DIFFRACTION
GALLIUM NITRIDES
HYDROGEN PEROXIDE
LAYERS
MOLECULAR BEAM EPITAXY
MONOCLINIC LATTICES
NEUTRON DIFFRACTION
OXYGEN
RESIDUAL STRESSES
ROUGHNESS
SUBSTRATES
TEMPERATURE DEPENDENCE
THIN FILMS
X-RAY DIFFRACTION
ZIRCONIUM OXIDES