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Title: Defect reduction in GaN epilayers grown by metal-organic chemical vapor deposition with in situ SiN{sub x} nanonetwork

Abstract

Line and point defect reductions in thin GaN epilayers with single and double in situ SiN{sub x} nanonetworks on sapphire substrates grown by metal-organic chemical vapor deposition were studied by deep-level transient spectroscopy (DLTS), augmented by x-ray diffraction (XRD), and low temperature photoluminescence (PL). All samples measured by DLTS in the temperature range from 80 to 400 K exhibited trap A (peak at {approx}325 K) with an activation energy of 0.55-0.58 eV, and trap B (peak at {approx}155 K) with an activation energy of 0.21-0.28 eV. The concentrations of both traps were much lower for layers with SiN{sub x} nanonetwork compared to the reference sample. The lowest concentration was achieved for the sample with 6 min deposition SiN{sub x} nanonetwork, which was also lower than that for a sample prepared by conventional epitaxial lateral overgrowth. In concert with the DLTS results, PL and XRD linewidths were reduced for the samples with SiN{sub x} network indicating improved material quality. Consistent trend among optical, structural, and DLTS results suggests that SiN{sub x} network can effectively reduce both point and line defects.

Authors:
; ; ;  [1]
  1. Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284 (United States) and Department of Physics, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)
Publication Date:
OSTI Identifier:
20971987
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 90; Journal Issue: 26; Other Information: DOI: 10.1063/1.2753096; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; DEEP LEVEL TRANSIENT SPECTROSCOPY; EPITAXY; LINE DEFECTS; LINE WIDTHS; METALS; PEAKS; PHOTOLUMINESCENCE; POINT DEFECTS; SAPPHIRE; SEMICONDUCTOR MATERIALS; SUBSTRATES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K; X-RAY DIFFRACTION

Citation Formats

Jinqiao, Xie, Chevtchenko, Serguei A, Oezguer, Uemit, and Morkoc, Hadis. Defect reduction in GaN epilayers grown by metal-organic chemical vapor deposition with in situ SiN{sub x} nanonetwork. United States: N. p., 2007. Web. doi:10.1063/1.2753096.
Jinqiao, Xie, Chevtchenko, Serguei A, Oezguer, Uemit, & Morkoc, Hadis. Defect reduction in GaN epilayers grown by metal-organic chemical vapor deposition with in situ SiN{sub x} nanonetwork. United States. https://doi.org/10.1063/1.2753096
Jinqiao, Xie, Chevtchenko, Serguei A, Oezguer, Uemit, and Morkoc, Hadis. Mon . "Defect reduction in GaN epilayers grown by metal-organic chemical vapor deposition with in situ SiN{sub x} nanonetwork". United States. https://doi.org/10.1063/1.2753096.
@article{osti_20971987,
title = {Defect reduction in GaN epilayers grown by metal-organic chemical vapor deposition with in situ SiN{sub x} nanonetwork},
author = {Jinqiao, Xie and Chevtchenko, Serguei A and Oezguer, Uemit and Morkoc, Hadis},
abstractNote = {Line and point defect reductions in thin GaN epilayers with single and double in situ SiN{sub x} nanonetworks on sapphire substrates grown by metal-organic chemical vapor deposition were studied by deep-level transient spectroscopy (DLTS), augmented by x-ray diffraction (XRD), and low temperature photoluminescence (PL). All samples measured by DLTS in the temperature range from 80 to 400 K exhibited trap A (peak at {approx}325 K) with an activation energy of 0.55-0.58 eV, and trap B (peak at {approx}155 K) with an activation energy of 0.21-0.28 eV. The concentrations of both traps were much lower for layers with SiN{sub x} nanonetwork compared to the reference sample. The lowest concentration was achieved for the sample with 6 min deposition SiN{sub x} nanonetwork, which was also lower than that for a sample prepared by conventional epitaxial lateral overgrowth. In concert with the DLTS results, PL and XRD linewidths were reduced for the samples with SiN{sub x} network indicating improved material quality. Consistent trend among optical, structural, and DLTS results suggests that SiN{sub x} network can effectively reduce both point and line defects.},
doi = {10.1063/1.2753096},
url = {https://www.osti.gov/biblio/20971987}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 26,
volume = 90,
place = {United States},
year = {2007},
month = {6}
}