Room temperature deposited indium zinc oxide thin film transistors

Wang, Y -L; Ren, F; Lim, Wantae; Norton, D P; Pearton, S J; Kravchenko, I I; Zavada, J M

doi:10.1063/1.2746084

Title: Room temperature deposited indium zinc oxide thin film transistors

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Abstract

Depletion-mode indium zinc oxide (IZO) channel thin film transistors were fabricated on glass substrates from layers deposited at room temperature using rf magnetron sputtering. The threshold voltage was in the range from -5.5 to -6.5 V depending on gate dielectric (SiO{sub 2}) thickness and the drain current on-to-off ratio was {approx}10{sup 5}. The maximum field effect mobility in the channel was {approx}4.5 cm{sup 2} V{sup -1} s{sup -1}, lower than the Hall mobility of {approx}17 cm{sup 2} V{sup -1} s{sup -1} in the same layers, suggesting a strong influence of scattering due to trapped charges at the SiO{sub 2}-IZO interface. The low deposition and processing temperatures make these devices suitable for applications requiring flexible substrates.

Authors:

Wang, Y -L; Ren, F; Lim, Wantae; Norton, D P; Pearton, S J; Kravchenko, I I; Zavada, J M ^[1]

Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)

Publication Date:: Mon Jun 04 00:00:00 EDT 2007

OSTI Identifier:: 20971952

Resource Type:: Journal Article

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 90; Journal Issue: 23; Other Information: DOI: 10.1063/1.2746084; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; CARRIER MOBILITY; DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; GLASS; HALL EFFECT; INDIUM COMPOUNDS; INTERFACES; LAYERS; SCATTERING; SEMICONDUCTOR MATERIALS; SILICON OXIDES; SPUTTERING; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; TRANSISTORS; ZINC OXIDES

Citation Formats


                    Wang, Y -L, Ren, F, Lim, Wantae, Norton, D P, Pearton, S J, Kravchenko, I I, Zavada, J M, Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, Department of Physics, University of Florida, Gainesville, Florida 32611, and Electronics Division, U.S. Army Research Office, Research Triangle Park, North Carolina 27709. Room temperature deposited indium zinc oxide thin film transistors.  United States: N. p., 2007. 
        Web.  doi:10.1063/1.2746084.

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                    Wang, Y -L, Ren, F, Lim, Wantae, Norton, D P, Pearton, S J, Kravchenko, I I, Zavada, J M, Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, Department of Physics, University of Florida, Gainesville, Florida 32611, & Electronics Division, U.S. Army Research Office, Research Triangle Park, North Carolina 27709. Room temperature deposited indium zinc oxide thin film transistors.  United States.  https://doi.org/10.1063/1.2746084

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                    Wang, Y -L, Ren, F, Lim, Wantae, Norton, D P, Pearton, S J, Kravchenko, I I, Zavada, J M, Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, Department of Physics, University of Florida, Gainesville, Florida 32611, and Electronics Division, U.S. Army Research Office, Research Triangle Park, North Carolina 27709. 2007.  
        "Room temperature deposited indium zinc oxide thin film transistors".  United States.  https://doi.org/10.1063/1.2746084.

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@article{osti_20971952,

  title        = {Room temperature deposited indium zinc oxide thin film transistors},

  author       = {Wang, Y -L and Ren, F and Lim, Wantae and Norton, D P and Pearton, S J and Kravchenko, I I and Zavada, J M and Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 and Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 and Department of Physics, University of Florida, Gainesville, Florida 32611 and Electronics Division, U.S. Army Research Office, Research Triangle Park, North Carolina 27709},

  abstractNote = {Depletion-mode indium zinc oxide (IZO) channel thin film transistors were fabricated on glass substrates from layers deposited at room temperature using rf magnetron sputtering. The threshold voltage was in the range from -5.5 to -6.5 V depending on gate dielectric (SiO{sub 2}) thickness and the drain current on-to-off ratio was {approx}10{sup 5}. The maximum field effect mobility in the channel was {approx}4.5 cm{sup 2} V{sup -1} s{sup -1}, lower than the Hall mobility of {approx}17 cm{sup 2} V{sup -1} s{sup -1} in the same layers, suggesting a strong influence of scattering due to trapped charges at the SiO{sub 2}-IZO interface. The low deposition and processing temperatures make these devices suitable for applications requiring flexible substrates.},

  doi          = {10.1063/1.2746084},

  url          = {https://www.osti.gov/biblio/20971952},
  journal      = {Applied Physics Letters},

  issn         = {0003-6951},

  number       = 23,

  volume       = 90,

  place        = {United States},

  year         = {Mon Jun 04 00:00:00 EDT 2007},

  month        = {Mon Jun 04 00:00:00 EDT 2007}

}

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