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Title: In situ ion scattering and x-ray photoelectron spectroscopy studies of stability and nanoscale oxidation of single crystal (100) InAs

Abstract

The authors report on the synthesis of clean and smooth surfaces of single crystal InAs (100) by hydrogen molecular cleaning along with in situ studies on the stability of such surfaces against oxide formation. Nanoscale oxidation studies have been performed in detail using in situ nuclear reaction analysis and x-ray photoelectron spectroscopy. Ion channeling studies have been performed to verify atomically smooth surfaces after postcleaning. Stability and kinetic boundaries of cleaned InAs (100) surfaces against oxidation have been experimentally derived. These results are important not only in preparing clean surfaces of InAs but also in understanding fundamentals of oxide/III-V semiconductor interfaces.

Authors:
; ; ;  [1];  [2];  [2]
  1. Harvard School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
20971932
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 90; Journal Issue: 20; Other Information: DOI: 10.1063/1.2740200; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; INDIUM ARSENIDES; ION CHANNELING; MONOCRYSTALS; NANOSTRUCTURES; NUCLEAR REACTION ANALYSIS; OXIDATION; OXIDES; SCATTERING; SEMICONDUCTOR MATERIALS; SURFACE CLEANING; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Chang, C.-L., Shutthanandan, Vaithiyalingam, Singhal, Subhash C., Ramanathan, Shriram, Pacific Northwest National Laboratory, Richland, Washington 99352, and Harvard School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138. In situ ion scattering and x-ray photoelectron spectroscopy studies of stability and nanoscale oxidation of single crystal (100) InAs. United States: N. p., 2007. Web. doi:10.1063/1.2740200.
Chang, C.-L., Shutthanandan, Vaithiyalingam, Singhal, Subhash C., Ramanathan, Shriram, Pacific Northwest National Laboratory, Richland, Washington 99352, & Harvard School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138. In situ ion scattering and x-ray photoelectron spectroscopy studies of stability and nanoscale oxidation of single crystal (100) InAs. United States. doi:10.1063/1.2740200.
Chang, C.-L., Shutthanandan, Vaithiyalingam, Singhal, Subhash C., Ramanathan, Shriram, Pacific Northwest National Laboratory, Richland, Washington 99352, and Harvard School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138. Mon . "In situ ion scattering and x-ray photoelectron spectroscopy studies of stability and nanoscale oxidation of single crystal (100) InAs". United States. doi:10.1063/1.2740200.
@article{osti_20971932,
title = {In situ ion scattering and x-ray photoelectron spectroscopy studies of stability and nanoscale oxidation of single crystal (100) InAs},
author = {Chang, C.-L. and Shutthanandan, Vaithiyalingam and Singhal, Subhash C. and Ramanathan, Shriram and Pacific Northwest National Laboratory, Richland, Washington 99352 and Harvard School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138},
abstractNote = {The authors report on the synthesis of clean and smooth surfaces of single crystal InAs (100) by hydrogen molecular cleaning along with in situ studies on the stability of such surfaces against oxide formation. Nanoscale oxidation studies have been performed in detail using in situ nuclear reaction analysis and x-ray photoelectron spectroscopy. Ion channeling studies have been performed to verify atomically smooth surfaces after postcleaning. Stability and kinetic boundaries of cleaned InAs (100) surfaces against oxidation have been experimentally derived. These results are important not only in preparing clean surfaces of InAs but also in understanding fundamentals of oxide/III-V semiconductor interfaces.},
doi = {10.1063/1.2740200},
journal = {Applied Physics Letters},
number = 20,
volume = 90,
place = {United States},
year = {Mon May 14 00:00:00 EDT 2007},
month = {Mon May 14 00:00:00 EDT 2007}
}