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Title: Faceting during GaAs quantum dot self-assembly by droplet epitaxy

Abstract

Strain-free GaAs quantum dots (QDs) are grown in a self-assembled fashion by applying Ga droplet epitaxy. The QDs are studied using electron diffraction and atomic force microscopy. Two distinct regimes are observed for the QD shape. QDs whose volume exceeds approximately 3x10{sup 5} Ga atoms are shaped like truncated pyramids with side facets having an angle of about 55 deg. . Smaller QDs are pyramidlike with 25 deg. facets.

Authors:
; ; ; ; ;  [1];  [2]
  1. Institut fuer Angewandte Physik und Zentrum fuer Mikrostrukturforschung, Jungiusstrasse 11, D-20355 Hamburg (Germany)
  2. (Hungary)
Publication Date:
OSTI Identifier:
20971931
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 90; Journal Issue: 20; Other Information: DOI: 10.1063/1.2737123; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; DROPLETS; ELECTRON DIFFRACTION; GALLIUM ARSENIDES; MOLECULAR BEAM EPITAXY; QUANTUM DOTS; SEMICONDUCTOR MATERIALS

Citation Formats

Heyn, Ch., Stemmann, A., Schramm, A., Welsch, H., Hansen, W., Nemcsics, A., and Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest. Faceting during GaAs quantum dot self-assembly by droplet epitaxy. United States: N. p., 2007. Web. doi:10.1063/1.2737123.
Heyn, Ch., Stemmann, A., Schramm, A., Welsch, H., Hansen, W., Nemcsics, A., & Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest. Faceting during GaAs quantum dot self-assembly by droplet epitaxy. United States. doi:10.1063/1.2737123.
Heyn, Ch., Stemmann, A., Schramm, A., Welsch, H., Hansen, W., Nemcsics, A., and Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest. Mon . "Faceting during GaAs quantum dot self-assembly by droplet epitaxy". United States. doi:10.1063/1.2737123.
@article{osti_20971931,
title = {Faceting during GaAs quantum dot self-assembly by droplet epitaxy},
author = {Heyn, Ch. and Stemmann, A. and Schramm, A. and Welsch, H. and Hansen, W. and Nemcsics, A. and Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest},
abstractNote = {Strain-free GaAs quantum dots (QDs) are grown in a self-assembled fashion by applying Ga droplet epitaxy. The QDs are studied using electron diffraction and atomic force microscopy. Two distinct regimes are observed for the QD shape. QDs whose volume exceeds approximately 3x10{sup 5} Ga atoms are shaped like truncated pyramids with side facets having an angle of about 55 deg. . Smaller QDs are pyramidlike with 25 deg. facets.},
doi = {10.1063/1.2737123},
journal = {Applied Physics Letters},
number = 20,
volume = 90,
place = {United States},
year = {Mon May 14 00:00:00 EDT 2007},
month = {Mon May 14 00:00:00 EDT 2007}
}