Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation
- Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-Katsura, Nishikyo, Kyoto 615-8510 (Japan)
Carrier lifetimes in 4H-SiC epilayers are investigated by differential microwave photoconductivity decay measurements. When the Z{sub 1/2} concentration is higher than 10{sup 13} cm{sup -3}, the Z{sub 1/2} center works as a recombination center. In this case, carrier lifetimes show positive dependence on the injection level (number of irradiated photons). On the other hand, other recombination processes such as surface recombination limit the lifetime when the Z{sub 1/2} concentration is lower than 10{sup 13} cm{sup -3}. In this case, carrier lifetimes have decreased by increasing the injection level. By controlling the Z{sub 1/2} concentration by low-energy electron irradiation, the lifetime control has been achieved.
- OSTI ID:
- 20971929
- Journal Information:
- Applied Physics Letters, Vol. 90, Issue 20; Other Information: DOI: 10.1063/1.2740580; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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