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Title: Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation

Abstract

Carrier lifetimes in 4H-SiC epilayers are investigated by differential microwave photoconductivity decay measurements. When the Z{sub 1/2} concentration is higher than 10{sup 13} cm{sup -3}, the Z{sub 1/2} center works as a recombination center. In this case, carrier lifetimes show positive dependence on the injection level (number of irradiated photons). On the other hand, other recombination processes such as surface recombination limit the lifetime when the Z{sub 1/2} concentration is lower than 10{sup 13} cm{sup -3}. In this case, carrier lifetimes have decreased by increasing the injection level. By controlling the Z{sub 1/2} concentration by low-energy electron irradiation, the lifetime control has been achieved.

Authors:
; ;  [1];  [2];  [2]
  1. Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-Katsura, Nishikyo, Kyoto 615-8510 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
20971929
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 90; Journal Issue: 20; Other Information: DOI: 10.1063/1.2740580; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARRIER LIFETIME; ELECTRON BEAMS; ELECTRONS; EPITAXY; IRRADIATION; MICROWAVE RADIATION; PHOTOCONDUCTIVITY; RECOMBINATION; SEMICONDUCTOR MATERIALS; SILICON COMPOUNDS

Citation Formats

Danno, Katsunori, Nakamura, Daisuke, Kimoto, Tsunenobu, Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-Katsura, Nishikyo, Kyoto 615-8510, Japan and Toyota Central R and D Laboratories, Inc, Aichi 480-1192, and Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo, Kyoto 615-8510. Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation. United States: N. p., 2007. Web. doi:10.1063/1.2740580.
Danno, Katsunori, Nakamura, Daisuke, Kimoto, Tsunenobu, Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-Katsura, Nishikyo, Kyoto 615-8510, Japan and Toyota Central R and D Laboratories, Inc, Aichi 480-1192, & Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo, Kyoto 615-8510. Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation. United States. doi:10.1063/1.2740580.
Danno, Katsunori, Nakamura, Daisuke, Kimoto, Tsunenobu, Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-Katsura, Nishikyo, Kyoto 615-8510, Japan and Toyota Central R and D Laboratories, Inc, Aichi 480-1192, and Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo, Kyoto 615-8510. Mon . "Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation". United States. doi:10.1063/1.2740580.
@article{osti_20971929,
title = {Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation},
author = {Danno, Katsunori and Nakamura, Daisuke and Kimoto, Tsunenobu and Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-Katsura, Nishikyo, Kyoto 615-8510, Japan and Toyota Central R and D Laboratories, Inc, Aichi 480-1192 and Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo, Kyoto 615-8510},
abstractNote = {Carrier lifetimes in 4H-SiC epilayers are investigated by differential microwave photoconductivity decay measurements. When the Z{sub 1/2} concentration is higher than 10{sup 13} cm{sup -3}, the Z{sub 1/2} center works as a recombination center. In this case, carrier lifetimes show positive dependence on the injection level (number of irradiated photons). On the other hand, other recombination processes such as surface recombination limit the lifetime when the Z{sub 1/2} concentration is lower than 10{sup 13} cm{sup -3}. In this case, carrier lifetimes have decreased by increasing the injection level. By controlling the Z{sub 1/2} concentration by low-energy electron irradiation, the lifetime control has been achieved.},
doi = {10.1063/1.2740580},
journal = {Applied Physics Letters},
number = 20,
volume = 90,
place = {United States},
year = {Mon May 14 00:00:00 EDT 2007},
month = {Mon May 14 00:00:00 EDT 2007}
}