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Title: Growth and properties of Mg-doped In-polar InN films

Abstract

Mg doping into In-polar InN layers for different Mg fluxes is performed on GaN templates by molecular beam epitaxy, and their electrical and optical properties are investigated. Mg concentration is linearly proportional to Mg-beam flux, indicating that the Mg-sticking coefficient is almost unity. With Mg doping, electron concentration decreases by the effect of carrier compensation, but it begins to increase with further increasing Mg flux because of Mg-related donorlike-defects formation. For the partially carrier-compensated Mg-doped InN, two photoluminescence peaks are observed; one is originated from free-to-acceptor emission with an acceptor activation energy of about 61 meV and the other is similar to the conventional band-to-band emission.

Authors:
; ; ;  [1];  [2]
  1. Department of Electronics and Mechanical Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan)
  2. (Japan) and InN-Project as a CREST Program of JST, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan)
Publication Date:
OSTI Identifier:
20971928
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 90; Journal Issue: 20; Other Information: DOI: 10.1063/1.2741124; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ACTIVATION ENERGY; CRYSTAL GROWTH; DOPED MATERIALS; ELECTRON DENSITY; ELECTRONS; FILMS; GALLIUM NITRIDES; INDIUM NITRIDES; LAYERS; MAGNESIUM; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS

Citation Formats

Wang Xinqiang, Che, Song-Bek, Ishitani, Yoshihiro, Yoshikawa, Akihiko, and Venture Business Laboratory, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522. Growth and properties of Mg-doped In-polar InN films. United States: N. p., 2007. Web. doi:10.1063/1.2741124.
Wang Xinqiang, Che, Song-Bek, Ishitani, Yoshihiro, Yoshikawa, Akihiko, & Venture Business Laboratory, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522. Growth and properties of Mg-doped In-polar InN films. United States. doi:10.1063/1.2741124.
Wang Xinqiang, Che, Song-Bek, Ishitani, Yoshihiro, Yoshikawa, Akihiko, and Venture Business Laboratory, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522. Mon . "Growth and properties of Mg-doped In-polar InN films". United States. doi:10.1063/1.2741124.
@article{osti_20971928,
title = {Growth and properties of Mg-doped In-polar InN films},
author = {Wang Xinqiang and Che, Song-Bek and Ishitani, Yoshihiro and Yoshikawa, Akihiko and Venture Business Laboratory, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522},
abstractNote = {Mg doping into In-polar InN layers for different Mg fluxes is performed on GaN templates by molecular beam epitaxy, and their electrical and optical properties are investigated. Mg concentration is linearly proportional to Mg-beam flux, indicating that the Mg-sticking coefficient is almost unity. With Mg doping, electron concentration decreases by the effect of carrier compensation, but it begins to increase with further increasing Mg flux because of Mg-related donorlike-defects formation. For the partially carrier-compensated Mg-doped InN, two photoluminescence peaks are observed; one is originated from free-to-acceptor emission with an acceptor activation energy of about 61 meV and the other is similar to the conventional band-to-band emission.},
doi = {10.1063/1.2741124},
journal = {Applied Physics Letters},
number = 20,
volume = 90,
place = {United States},
year = {Mon May 14 00:00:00 EDT 2007},
month = {Mon May 14 00:00:00 EDT 2007}
}