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Title: Cubic-to-monoclinic phase transition during the epitaxial growth of crystalline Gd{sub 2}O{sub 3} films on Ge(001) substrates

Abstract

Thin crystalline films of Gd{sub 2}O{sub 3} are grown on an atomically flat Ge(001) surface by molecular beam epitaxy and are characterized in situ by reflection high energy electron diffraction and x-ray photoelectron spectroscopy, and ex situ by x-ray diffraction (XRD), atomic force microscopy (AFM), and transmission electron microscopy. The first stage of the growth corresponds to a cubic (110) structure, with two equiprobable, 90 deg. rotated, in-plane domains. Increasing the thickness of the films, a phase transition from cubic (110) to monoclinic (100) oriented crystallites is observed which keeps the in-plane domain rotation, as evidenced by XRD and AFM.

Authors:
; ; ; ; ;  [1];  [2]
  1. CNR-INFM, Laboratorio Nazionale MDM, via C. Olivetti 2, I-20041 Agrate Brianza (Milan) (Italy)
  2. (Milan) (Italy)
Publication Date:
OSTI Identifier:
20971921
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 90; Journal Issue: 19; Other Information: DOI: 10.1063/1.2738367; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; ELECTRON DIFFRACTION; GADOLINIUM OXIDES; MOLECULAR BEAM EPITAXY; MONOCLINIC LATTICES; PHASE TRANSFORMATIONS; REFLECTION; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Molle, Alessandro, Wiemer, Claudia, Bhuiyan, Md. Nurul Kabir, Tallarida, Grazia, Fanciulli, Marco, Pavia, Giuseppe, and STMicroelectronics, via C. Olivetti 2, I-20041 Agrate Brianza. Cubic-to-monoclinic phase transition during the epitaxial growth of crystalline Gd{sub 2}O{sub 3} films on Ge(001) substrates. United States: N. p., 2007. Web. doi:10.1063/1.2738367.
Molle, Alessandro, Wiemer, Claudia, Bhuiyan, Md. Nurul Kabir, Tallarida, Grazia, Fanciulli, Marco, Pavia, Giuseppe, & STMicroelectronics, via C. Olivetti 2, I-20041 Agrate Brianza. Cubic-to-monoclinic phase transition during the epitaxial growth of crystalline Gd{sub 2}O{sub 3} films on Ge(001) substrates. United States. doi:10.1063/1.2738367.
Molle, Alessandro, Wiemer, Claudia, Bhuiyan, Md. Nurul Kabir, Tallarida, Grazia, Fanciulli, Marco, Pavia, Giuseppe, and STMicroelectronics, via C. Olivetti 2, I-20041 Agrate Brianza. Mon . "Cubic-to-monoclinic phase transition during the epitaxial growth of crystalline Gd{sub 2}O{sub 3} films on Ge(001) substrates". United States. doi:10.1063/1.2738367.
@article{osti_20971921,
title = {Cubic-to-monoclinic phase transition during the epitaxial growth of crystalline Gd{sub 2}O{sub 3} films on Ge(001) substrates},
author = {Molle, Alessandro and Wiemer, Claudia and Bhuiyan, Md. Nurul Kabir and Tallarida, Grazia and Fanciulli, Marco and Pavia, Giuseppe and STMicroelectronics, via C. Olivetti 2, I-20041 Agrate Brianza},
abstractNote = {Thin crystalline films of Gd{sub 2}O{sub 3} are grown on an atomically flat Ge(001) surface by molecular beam epitaxy and are characterized in situ by reflection high energy electron diffraction and x-ray photoelectron spectroscopy, and ex situ by x-ray diffraction (XRD), atomic force microscopy (AFM), and transmission electron microscopy. The first stage of the growth corresponds to a cubic (110) structure, with two equiprobable, 90 deg. rotated, in-plane domains. Increasing the thickness of the films, a phase transition from cubic (110) to monoclinic (100) oriented crystallites is observed which keeps the in-plane domain rotation, as evidenced by XRD and AFM.},
doi = {10.1063/1.2738367},
journal = {Applied Physics Letters},
number = 19,
volume = 90,
place = {United States},
year = {Mon May 07 00:00:00 EDT 2007},
month = {Mon May 07 00:00:00 EDT 2007}
}
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