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Title: Change of interface dipole energy with interfacial layer thickness and O{sub 2} plasma treatment in metal/organic interface

Abstract

The authors determined the interface dipole energies between interfacial layers with different thicknesses coated on indium tin oxides (ITOs) and 4,4{sup '}-bis[N-(1-naphtyl)-N-phenyl-amino]biphenyl using ultraviolet and synchrotron radiation photoemission spectroscopy. The interface dipole energy increased as a function of interfacial layer thickness up to 4 nm. After O{sub 2} plasma treatment on thick-metal (>4 nm) coated ITO, the work function and interface dipole energy increased. In thin-metal (<2 nm) coated ITO, no change in the interface dipole energy was found though the work function increased. Thus, the O{sub 2} plasma treated thin (<2 nm) interfacial layer reduced the hole injection barrier.

Authors:
; ;  [1]
  1. Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Kyungbuk 790-784 (Korea, Republic of)
Publication Date:
OSTI Identifier:
20971909
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 90; Journal Issue: 18; Other Information: DOI: 10.1063/1.2734916; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BIPHENYL; DIPOLES; HOLES; INDIUM COMPOUNDS; LAYERS; LIGHT EMITTING DIODES; PHOTOEMISSION; PLASMA; SURFACE TREATMENTS; SYNCHROTRON RADIATION; TIN OXIDES; ULTRAVIOLET RADIATION; WORK FUNCTIONS; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Kim, Soo Young, Hong, Kihyon, and Lee, Jong-Lam. Change of interface dipole energy with interfacial layer thickness and O{sub 2} plasma treatment in metal/organic interface. United States: N. p., 2007. Web. doi:10.1063/1.2734916.
Kim, Soo Young, Hong, Kihyon, & Lee, Jong-Lam. Change of interface dipole energy with interfacial layer thickness and O{sub 2} plasma treatment in metal/organic interface. United States. doi:10.1063/1.2734916.
Kim, Soo Young, Hong, Kihyon, and Lee, Jong-Lam. Mon . "Change of interface dipole energy with interfacial layer thickness and O{sub 2} plasma treatment in metal/organic interface". United States. doi:10.1063/1.2734916.
@article{osti_20971909,
title = {Change of interface dipole energy with interfacial layer thickness and O{sub 2} plasma treatment in metal/organic interface},
author = {Kim, Soo Young and Hong, Kihyon and Lee, Jong-Lam},
abstractNote = {The authors determined the interface dipole energies between interfacial layers with different thicknesses coated on indium tin oxides (ITOs) and 4,4{sup '}-bis[N-(1-naphtyl)-N-phenyl-amino]biphenyl using ultraviolet and synchrotron radiation photoemission spectroscopy. The interface dipole energy increased as a function of interfacial layer thickness up to 4 nm. After O{sub 2} plasma treatment on thick-metal (>4 nm) coated ITO, the work function and interface dipole energy increased. In thin-metal (<2 nm) coated ITO, no change in the interface dipole energy was found though the work function increased. Thus, the O{sub 2} plasma treated thin (<2 nm) interfacial layer reduced the hole injection barrier.},
doi = {10.1063/1.2734916},
journal = {Applied Physics Letters},
number = 18,
volume = 90,
place = {United States},
year = {Mon Apr 30 00:00:00 EDT 2007},
month = {Mon Apr 30 00:00:00 EDT 2007}
}