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Title: Amphoteric arsenic in GaN

Abstract

The authors have determined the lattice location of implanted arsenic in GaN by means of conversion electron emission channeling from radioactive {sup 73}As. They give direct evidence that As is an amphoteric impurity, thus settling the long-standing question as to whether it prefers cation or anion sites in GaN. The amphoteric character of As and the fact that As{sub Ga} 'antisites' are not minority defects provide additional aspects to be taken into account for an explanantion of the so-called miscibility gap in ternary GaAs{sub 1-x}N{sub x} compounds, which cannot be grown with a single phase for values of x in the range of 0.1<x<0.99.

Authors:
; ; ; ;  [1];  [2];  [3];  [2];  [2];  [4]
  1. Instituto Tecnologico e Nuclear, Estrada Nacional 10, 2686-953 Sacavem (Portugal) and Centro de Fisica Nuclear, Universidade de Lisboa, Avenida Professor Gama Pinto 2, 1649-003 Lisbon (Portugal)
  2. (Portugal)
  3. (Portugal) and CERN-PH, 1211 Geneva 23 (Switzerland)
  4. (Switzerland)
Publication Date:
OSTI Identifier:
20971903
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 90; Journal Issue: 18; Other Information: DOI: 10.1063/1.2736299; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANIONS; ARSENIC; ARSENIC 73; CATIONS; CHANNELING; ELECTRON EMISSION; GALLIUM NITRIDES; SEMICONDUCTOR MATERIALS; SOLUBILITY

Citation Formats

Wahl, U., Correia, J. G., Araujo, J. P., Rita, E., Soares, J. C., Instituto Tecnologico e Nuclear, Estrada Nacional 10, 2686-953 Sacavem, Centro de Fisica Nuclear, Universidade de Lisboa, Avenida Professor Gama Pinto 2, 1649-003 Lisbon, Departamento de Fisica, Universidade do Porto, Rua do Campo Alegre 687, 4169-007 Porto, Centro de Fisica Nuclear, Universidade de Lisboa, Avenida Professor Gama Pinto 2, 1649-003 Lisbon, and CERN-PH, CH-1211 Geneva 23. Amphoteric arsenic in GaN. United States: N. p., 2007. Web. doi:10.1063/1.2736299.
Wahl, U., Correia, J. G., Araujo, J. P., Rita, E., Soares, J. C., Instituto Tecnologico e Nuclear, Estrada Nacional 10, 2686-953 Sacavem, Centro de Fisica Nuclear, Universidade de Lisboa, Avenida Professor Gama Pinto 2, 1649-003 Lisbon, Departamento de Fisica, Universidade do Porto, Rua do Campo Alegre 687, 4169-007 Porto, Centro de Fisica Nuclear, Universidade de Lisboa, Avenida Professor Gama Pinto 2, 1649-003 Lisbon, & CERN-PH, CH-1211 Geneva 23. Amphoteric arsenic in GaN. United States. doi:10.1063/1.2736299.
Wahl, U., Correia, J. G., Araujo, J. P., Rita, E., Soares, J. C., Instituto Tecnologico e Nuclear, Estrada Nacional 10, 2686-953 Sacavem, Centro de Fisica Nuclear, Universidade de Lisboa, Avenida Professor Gama Pinto 2, 1649-003 Lisbon, Departamento de Fisica, Universidade do Porto, Rua do Campo Alegre 687, 4169-007 Porto, Centro de Fisica Nuclear, Universidade de Lisboa, Avenida Professor Gama Pinto 2, 1649-003 Lisbon, and CERN-PH, CH-1211 Geneva 23. Mon . "Amphoteric arsenic in GaN". United States. doi:10.1063/1.2736299.
@article{osti_20971903,
title = {Amphoteric arsenic in GaN},
author = {Wahl, U. and Correia, J. G. and Araujo, J. P. and Rita, E. and Soares, J. C. and Instituto Tecnologico e Nuclear, Estrada Nacional 10, 2686-953 Sacavem and Centro de Fisica Nuclear, Universidade de Lisboa, Avenida Professor Gama Pinto 2, 1649-003 Lisbon and Departamento de Fisica, Universidade do Porto, Rua do Campo Alegre 687, 4169-007 Porto and Centro de Fisica Nuclear, Universidade de Lisboa, Avenida Professor Gama Pinto 2, 1649-003 Lisbon and CERN-PH, CH-1211 Geneva 23},
abstractNote = {The authors have determined the lattice location of implanted arsenic in GaN by means of conversion electron emission channeling from radioactive {sup 73}As. They give direct evidence that As is an amphoteric impurity, thus settling the long-standing question as to whether it prefers cation or anion sites in GaN. The amphoteric character of As and the fact that As{sub Ga} 'antisites' are not minority defects provide additional aspects to be taken into account for an explanantion of the so-called miscibility gap in ternary GaAs{sub 1-x}N{sub x} compounds, which cannot be grown with a single phase for values of x in the range of 0.1<x<0.99.},
doi = {10.1063/1.2736299},
journal = {Applied Physics Letters},
number = 18,
volume = 90,
place = {United States},
year = {Mon Apr 30 00:00:00 EDT 2007},
month = {Mon Apr 30 00:00:00 EDT 2007}
}