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Title: Binary-collision modeling of ion-induced stress relaxation in cubic BN and amorphous C thin films

Abstract

It is demonstrated that ion-bombardment-induced stress release during physical vapor deposition of cubic boron nitride (cBN) and amorphous carbon (aC) films is related to collisional relocation of atoms. A model based on TRIM and molecular dynamics computer simulations is presented. Experimental results obtained using pulsed substrate bias are in good agreement with the model predictions at adequately chosen threshold energies of atomic relocation. The collisional relaxation model describes the experimental data significantly better than the widely applied thermal spike model.

Authors:
; ; ;  [1];  [2]
  1. Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, D-01314 (Germany)
  2. (Australia)
Publication Date:
OSTI Identifier:
20971898
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 90; Journal Issue: 18; Other Information: DOI: 10.1063/1.2734472; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AMORPHOUS STATE; BORON NITRIDES; CARBON; COMPUTERIZED SIMULATION; EXPERIMENTAL DATA; ION BEAMS; MOLECULAR DYNAMICS METHOD; PHYSICAL VAPOR DEPOSITION; SEMICONDUCTOR MATERIALS; STRESS RELAXATION; STRESSES; SUBSTRATES; THERMAL SPIKES; THIN FILMS; THRESHOLD ENERGY

Citation Formats

Abendroth, B., Jaeger, H. U., Moeller, W., Bilek, M., and Applied and Plasma Physics Department, School of Physics, University of Sydney, Sydney, New South Wales 2006. Binary-collision modeling of ion-induced stress relaxation in cubic BN and amorphous C thin films. United States: N. p., 2007. Web. doi:10.1063/1.2734472.
Abendroth, B., Jaeger, H. U., Moeller, W., Bilek, M., & Applied and Plasma Physics Department, School of Physics, University of Sydney, Sydney, New South Wales 2006. Binary-collision modeling of ion-induced stress relaxation in cubic BN and amorphous C thin films. United States. doi:10.1063/1.2734472.
Abendroth, B., Jaeger, H. U., Moeller, W., Bilek, M., and Applied and Plasma Physics Department, School of Physics, University of Sydney, Sydney, New South Wales 2006. Mon . "Binary-collision modeling of ion-induced stress relaxation in cubic BN and amorphous C thin films". United States. doi:10.1063/1.2734472.
@article{osti_20971898,
title = {Binary-collision modeling of ion-induced stress relaxation in cubic BN and amorphous C thin films},
author = {Abendroth, B. and Jaeger, H. U. and Moeller, W. and Bilek, M. and Applied and Plasma Physics Department, School of Physics, University of Sydney, Sydney, New South Wales 2006},
abstractNote = {It is demonstrated that ion-bombardment-induced stress release during physical vapor deposition of cubic boron nitride (cBN) and amorphous carbon (aC) films is related to collisional relocation of atoms. A model based on TRIM and molecular dynamics computer simulations is presented. Experimental results obtained using pulsed substrate bias are in good agreement with the model predictions at adequately chosen threshold energies of atomic relocation. The collisional relaxation model describes the experimental data significantly better than the widely applied thermal spike model.},
doi = {10.1063/1.2734472},
journal = {Applied Physics Letters},
number = 18,
volume = 90,
place = {United States},
year = {Mon Apr 30 00:00:00 EDT 2007},
month = {Mon Apr 30 00:00:00 EDT 2007}
}