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Title: Photoluminescence of individual doped GaAs/AlGaAs nanofabricated quantum dots

Abstract

Dilute arrays of GaAs/AlGaAs modulation-doped quantum dots with same sizes fabricated by electron beam lithography and low impact reactive ion etching exhibit highly uniform luminescence lines. Single quantum dots display spectral emission with peak energies and linewidths linked largely to the geometrical diameter of the dot and to the built-in electron population. Multicharged excitonic and biexcitonic emission intensities have activation energy of about 2 meV. These results highlight the potential of high quality nanofabricated quantum dots for applications in areas that require fine control of optical emission.

Authors:
; ; ; ; ; ; ; ; ; ;  [1];  [2];  [3];  [3]
  1. NEST CNR-INFM, Scuola Normale Superiore, Piazza dei Cavalieri 7, I-56126 Pisa (Italy)
  2. (Italy)
  3. (United States)
Publication Date:
OSTI Identifier:
20971896
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 90; Journal Issue: 18; Other Information: DOI: 10.1063/1.2734397; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ACTIVATION ENERGY; ALUMINIUM ARSENIDES; DOPED MATERIALS; ELECTRON BEAMS; ETCHING; EXCITONS; GALLIUM ARSENIDES; LINE WIDTHS; PHOTOLUMINESCENCE; QUANTUM DOTS; SEMICONDUCTOR MATERIALS

Citation Formats

Kalliakos, Sokratis, Garcia, Cesar Pascual, Pellegrini, Vittorio, Zamfirescu, Marian, Cavigli, Lucia, Gurioli, Massimo, Vinattieri, Anna, Pinczuk, Aron, Dennis, Brian S., Pfeiffer, Loren N., West, Ken W., Department of Physics and LENS, Universita di Firenze, 50019 Sesto Fiorentino, Department of Physics, Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, and Bell Labs, Alcatel-Lucent, Murray Hill, New Jersey 07974, and Bell Laboratories, Alcatel-Lucent, Murray Hill, New Jersey 07974. Photoluminescence of individual doped GaAs/AlGaAs nanofabricated quantum dots. United States: N. p., 2007. Web. doi:10.1063/1.2734397.
Kalliakos, Sokratis, Garcia, Cesar Pascual, Pellegrini, Vittorio, Zamfirescu, Marian, Cavigli, Lucia, Gurioli, Massimo, Vinattieri, Anna, Pinczuk, Aron, Dennis, Brian S., Pfeiffer, Loren N., West, Ken W., Department of Physics and LENS, Universita di Firenze, 50019 Sesto Fiorentino, Department of Physics, Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, and Bell Labs, Alcatel-Lucent, Murray Hill, New Jersey 07974, & Bell Laboratories, Alcatel-Lucent, Murray Hill, New Jersey 07974. Photoluminescence of individual doped GaAs/AlGaAs nanofabricated quantum dots. United States. doi:10.1063/1.2734397.
Kalliakos, Sokratis, Garcia, Cesar Pascual, Pellegrini, Vittorio, Zamfirescu, Marian, Cavigli, Lucia, Gurioli, Massimo, Vinattieri, Anna, Pinczuk, Aron, Dennis, Brian S., Pfeiffer, Loren N., West, Ken W., Department of Physics and LENS, Universita di Firenze, 50019 Sesto Fiorentino, Department of Physics, Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, and Bell Labs, Alcatel-Lucent, Murray Hill, New Jersey 07974, and Bell Laboratories, Alcatel-Lucent, Murray Hill, New Jersey 07974. Mon . "Photoluminescence of individual doped GaAs/AlGaAs nanofabricated quantum dots". United States. doi:10.1063/1.2734397.
@article{osti_20971896,
title = {Photoluminescence of individual doped GaAs/AlGaAs nanofabricated quantum dots},
author = {Kalliakos, Sokratis and Garcia, Cesar Pascual and Pellegrini, Vittorio and Zamfirescu, Marian and Cavigli, Lucia and Gurioli, Massimo and Vinattieri, Anna and Pinczuk, Aron and Dennis, Brian S. and Pfeiffer, Loren N. and West, Ken W. and Department of Physics and LENS, Universita di Firenze, 50019 Sesto Fiorentino and Department of Physics, Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, and Bell Labs, Alcatel-Lucent, Murray Hill, New Jersey 07974 and Bell Laboratories, Alcatel-Lucent, Murray Hill, New Jersey 07974},
abstractNote = {Dilute arrays of GaAs/AlGaAs modulation-doped quantum dots with same sizes fabricated by electron beam lithography and low impact reactive ion etching exhibit highly uniform luminescence lines. Single quantum dots display spectral emission with peak energies and linewidths linked largely to the geometrical diameter of the dot and to the built-in electron population. Multicharged excitonic and biexcitonic emission intensities have activation energy of about 2 meV. These results highlight the potential of high quality nanofabricated quantum dots for applications in areas that require fine control of optical emission.},
doi = {10.1063/1.2734397},
journal = {Applied Physics Letters},
number = 18,
volume = 90,
place = {United States},
year = {Mon Apr 30 00:00:00 EDT 2007},
month = {Mon Apr 30 00:00:00 EDT 2007}
}