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Title: Topotaxial growth of Ti{sub 2}AlN by solid state reaction in AlN/Ti(0001) multilayer thin films

Abstract

The formation of Ti{sub 2}AlN by solid state reaction between layers of wurtzite-AlN and {alpha}-Ti was characterized by in situ x-ray scattering. The sequential deposition of these layers by dual magnetron sputtering onto Al{sub 2}O{sub 3}(0001) at 200 deg. C yielded smooth, heteroepitaxial (0001) oriented films, with abrupt AlN/Ti interfaces as shown by x-ray reflectivity and Rutherford backscattering spectroscopy. Annealing at 400 deg. C led to AlN decomposition and diffusion of released Al and N into the Ti layers, with formation of Ti{sub 3}AlN. Further annealing at 500 deg. C resulted in a phase transformation into Ti{sub 2}AlN(0001) after only 5 min.

Authors:
; ; ; ; ;  [1];  [2];  [2];  [3]
  1. Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linkoeping University, S-581 83 Linkoeping (Sweden)
  2. (Germany)
  3. (IFM), Linkoeping University, S-581 83 Linkoeping (Sweden)
Publication Date:
OSTI Identifier:
20971887
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 90; Journal Issue: 17; Other Information: DOI: 10.1063/1.2731520; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; ALUMINIUM OXIDES; ANNEALING; CRYSTAL GROWTH; DECOMPOSITION; DEPOSITION; EPITAXY; INTERFACES; PHASE TRANSFORMATIONS; REFLECTIVITY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SPUTTERING; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; TITANIUM COMPOUNDS; TITANIUM-ALPHA; X-RAY DIFFRACTION

Citation Formats

Hoeglund, C., Beckers, M., Schell, N., Borany, J. v., Birch, J., Hultman, L., GKSS Research Center Geesthacht, Max-Planck-Str. 1, D-21502 Geesthacht, Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, P.O. Box 510119, D-01314 Dresden, and Thin Film Physics Division, Department of Physics, Chemistry and Biology. Topotaxial growth of Ti{sub 2}AlN by solid state reaction in AlN/Ti(0001) multilayer thin films. United States: N. p., 2007. Web. doi:10.1063/1.2731520.
Hoeglund, C., Beckers, M., Schell, N., Borany, J. v., Birch, J., Hultman, L., GKSS Research Center Geesthacht, Max-Planck-Str. 1, D-21502 Geesthacht, Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, P.O. Box 510119, D-01314 Dresden, & Thin Film Physics Division, Department of Physics, Chemistry and Biology. Topotaxial growth of Ti{sub 2}AlN by solid state reaction in AlN/Ti(0001) multilayer thin films. United States. doi:10.1063/1.2731520.
Hoeglund, C., Beckers, M., Schell, N., Borany, J. v., Birch, J., Hultman, L., GKSS Research Center Geesthacht, Max-Planck-Str. 1, D-21502 Geesthacht, Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, P.O. Box 510119, D-01314 Dresden, and Thin Film Physics Division, Department of Physics, Chemistry and Biology. Mon . "Topotaxial growth of Ti{sub 2}AlN by solid state reaction in AlN/Ti(0001) multilayer thin films". United States. doi:10.1063/1.2731520.
@article{osti_20971887,
title = {Topotaxial growth of Ti{sub 2}AlN by solid state reaction in AlN/Ti(0001) multilayer thin films},
author = {Hoeglund, C. and Beckers, M. and Schell, N. and Borany, J. v. and Birch, J. and Hultman, L. and GKSS Research Center Geesthacht, Max-Planck-Str. 1, D-21502 Geesthacht and Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, P.O. Box 510119, D-01314 Dresden and Thin Film Physics Division, Department of Physics, Chemistry and Biology},
abstractNote = {The formation of Ti{sub 2}AlN by solid state reaction between layers of wurtzite-AlN and {alpha}-Ti was characterized by in situ x-ray scattering. The sequential deposition of these layers by dual magnetron sputtering onto Al{sub 2}O{sub 3}(0001) at 200 deg. C yielded smooth, heteroepitaxial (0001) oriented films, with abrupt AlN/Ti interfaces as shown by x-ray reflectivity and Rutherford backscattering spectroscopy. Annealing at 400 deg. C led to AlN decomposition and diffusion of released Al and N into the Ti layers, with formation of Ti{sub 3}AlN. Further annealing at 500 deg. C resulted in a phase transformation into Ti{sub 2}AlN(0001) after only 5 min.},
doi = {10.1063/1.2731520},
journal = {Applied Physics Letters},
number = 17,
volume = 90,
place = {United States},
year = {Mon Apr 23 00:00:00 EDT 2007},
month = {Mon Apr 23 00:00:00 EDT 2007}
}