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Title: Role of atomic nitrogen during GaN growth by plasma-assisted molecular beam epitaxy revealed by appearance mass spectrometry

Abstract

To identify the species which contribute to GaN growth, the authors investigated the discharge parameter (0.3-4.8 SCCM (SCCM denotes cubic centimeter per minute at STP), 150-400 W) dependences of the atomic N flux by appearance mass spectrometry and of the incorporated nitrogen atoms into GaN layers grown by plasma-assisted molecular beam epitaxy (PAMBE) using the rf-plasma source. Ion fluxes were also evaluated by ion current measurements. A good correlation between the supplied atomic N flux and the incorporated nitrogen flux was obtained under a wide range of plasma conditions. It was clarified that the atomic N plays a dominant role in the growth of GaN by PAMBE.

Authors:
; ; ; ; ;  [1];  [2];  [2]
  1. Department of Electrical Engineering and Computer Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
20971876
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 90; Journal Issue: 17; Other Information: DOI: 10.1063/1.2734390; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL GROWTH; DEPOSITION; GALLIUM NITRIDES; LAYERS; MASS SPECTRA; MASS SPECTROSCOPY; MOLECULAR BEAM EPITAXY; NITROGEN; PLASMA; SEMICONDUCTOR MATERIALS

Citation Formats

Osaka, J., Senthil Kumar, M., Toyoda, H., Ishijima, T., Sugai, H., Mizutani, T., Department of Electrical Engineering, Nagoya University Furo-cho, Chikusa-ku, Nagoya 464-8603, and Department of Quantum Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan and Institute for Advanced Research, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603. Role of atomic nitrogen during GaN growth by plasma-assisted molecular beam epitaxy revealed by appearance mass spectrometry. United States: N. p., 2007. Web. doi:10.1063/1.2734390.
Osaka, J., Senthil Kumar, M., Toyoda, H., Ishijima, T., Sugai, H., Mizutani, T., Department of Electrical Engineering, Nagoya University Furo-cho, Chikusa-ku, Nagoya 464-8603, & Department of Quantum Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan and Institute for Advanced Research, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603. Role of atomic nitrogen during GaN growth by plasma-assisted molecular beam epitaxy revealed by appearance mass spectrometry. United States. doi:10.1063/1.2734390.
Osaka, J., Senthil Kumar, M., Toyoda, H., Ishijima, T., Sugai, H., Mizutani, T., Department of Electrical Engineering, Nagoya University Furo-cho, Chikusa-ku, Nagoya 464-8603, and Department of Quantum Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan and Institute for Advanced Research, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603. Mon . "Role of atomic nitrogen during GaN growth by plasma-assisted molecular beam epitaxy revealed by appearance mass spectrometry". United States. doi:10.1063/1.2734390.
@article{osti_20971876,
title = {Role of atomic nitrogen during GaN growth by plasma-assisted molecular beam epitaxy revealed by appearance mass spectrometry},
author = {Osaka, J. and Senthil Kumar, M. and Toyoda, H. and Ishijima, T. and Sugai, H. and Mizutani, T. and Department of Electrical Engineering, Nagoya University Furo-cho, Chikusa-ku, Nagoya 464-8603 and Department of Quantum Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan and Institute for Advanced Research, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603},
abstractNote = {To identify the species which contribute to GaN growth, the authors investigated the discharge parameter (0.3-4.8 SCCM (SCCM denotes cubic centimeter per minute at STP), 150-400 W) dependences of the atomic N flux by appearance mass spectrometry and of the incorporated nitrogen atoms into GaN layers grown by plasma-assisted molecular beam epitaxy (PAMBE) using the rf-plasma source. Ion fluxes were also evaluated by ion current measurements. A good correlation between the supplied atomic N flux and the incorporated nitrogen flux was obtained under a wide range of plasma conditions. It was clarified that the atomic N plays a dominant role in the growth of GaN by PAMBE.},
doi = {10.1063/1.2734390},
journal = {Applied Physics Letters},
number = 17,
volume = 90,
place = {United States},
year = {Mon Apr 23 00:00:00 EDT 2007},
month = {Mon Apr 23 00:00:00 EDT 2007}
}