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Title: Cathodoluminescence studies of carrier concentration dependence for the electron-irradiation effects in p-GaN

Abstract

Electron-irradiation increase of nonequilibrium carrier lifetime was studied as a function of hole concentration in Mg-doped GaN. Temperature-dependent cathodoluminescence (CL) studies yielded activation energies of 344, 326, 237, and 197 meV for samples with hole concentrations of 2x10{sup 16}, 9x10{sup 16}, 3x10{sup 18}, and 7x10{sup 18} cm{sup -3}, respectively. The systematic decay of activation energy with carrier concentration was found to be consistent with Mg acceptors, indicating the involvement of the latter levels in irradiation-induced lifetime changes.

Authors:
; ; ; ; ; ;  [1];  [2];  [3]
  1. University of Central Florida, Orlando, Florida 32816-2385 (United States)
  2. (United States)
  3. (Israel)
Publication Date:
OSTI Identifier:
20971875
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 90; Journal Issue: 17; Other Information: DOI: 10.1063/1.2733620; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ACTIVATION ENERGY; CARRIER DENSITY; CARRIER LIFETIME; CATHODOLUMINESCENCE; DOPED MATERIALS; GALLIUM NITRIDES; HOLES; IRRADIATION; MAGNESIUM; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE

Citation Formats

Lopatiuk-Tirpak, O., Chernyak, L., Wang, Y. L., Ren, F., Pearton, S. J., Gartsman, K., Feldman, Y., University of Florida, Gainesville, Florida 32611, and Weizmann Institute of Science, Rehovot 76100. Cathodoluminescence studies of carrier concentration dependence for the electron-irradiation effects in p-GaN. United States: N. p., 2007. Web. doi:10.1063/1.2733620.
Lopatiuk-Tirpak, O., Chernyak, L., Wang, Y. L., Ren, F., Pearton, S. J., Gartsman, K., Feldman, Y., University of Florida, Gainesville, Florida 32611, & Weizmann Institute of Science, Rehovot 76100. Cathodoluminescence studies of carrier concentration dependence for the electron-irradiation effects in p-GaN. United States. doi:10.1063/1.2733620.
Lopatiuk-Tirpak, O., Chernyak, L., Wang, Y. L., Ren, F., Pearton, S. J., Gartsman, K., Feldman, Y., University of Florida, Gainesville, Florida 32611, and Weizmann Institute of Science, Rehovot 76100. Mon . "Cathodoluminescence studies of carrier concentration dependence for the electron-irradiation effects in p-GaN". United States. doi:10.1063/1.2733620.
@article{osti_20971875,
title = {Cathodoluminescence studies of carrier concentration dependence for the electron-irradiation effects in p-GaN},
author = {Lopatiuk-Tirpak, O. and Chernyak, L. and Wang, Y. L. and Ren, F. and Pearton, S. J. and Gartsman, K. and Feldman, Y. and University of Florida, Gainesville, Florida 32611 and Weizmann Institute of Science, Rehovot 76100},
abstractNote = {Electron-irradiation increase of nonequilibrium carrier lifetime was studied as a function of hole concentration in Mg-doped GaN. Temperature-dependent cathodoluminescence (CL) studies yielded activation energies of 344, 326, 237, and 197 meV for samples with hole concentrations of 2x10{sup 16}, 9x10{sup 16}, 3x10{sup 18}, and 7x10{sup 18} cm{sup -3}, respectively. The systematic decay of activation energy with carrier concentration was found to be consistent with Mg acceptors, indicating the involvement of the latter levels in irradiation-induced lifetime changes.},
doi = {10.1063/1.2733620},
journal = {Applied Physics Letters},
number = 17,
volume = 90,
place = {United States},
year = {Mon Apr 23 00:00:00 EDT 2007},
month = {Mon Apr 23 00:00:00 EDT 2007}
}