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Title: Epitaxial silicon devices for dosimetry applications

Abstract

A straightforward improvement of the efficiency and long term stability of silicon dosimeters has been obtained with a n{sup +}-p junction surrounded by a guard-ring structure implanted on an epitaxial p-type Si layer grown on a Czochralski substrate. The sensitivity of devices made on 50-{mu}m-thick epitaxial Si degrades by only 7% after an irradiation with 6 MeV electrons up to 1.5 kGy, and shows no significant further decay up to 10 kGy. These results prove the enhanced radiation tolerance and stability of epitaxial diodes as compared to present state-of-the-art Si devices.

Authors:
; ; ; ; ; ;  [1];  [2];  [2];  [3]
  1. INFN Firenze, Department of Energetics, University of Florence, Florence 50139 (Italy)
  2. (Italy)
  3. (Norway)
Publication Date:
OSTI Identifier:
20971874
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 90; Journal Issue: 17; Other Information: DOI: 10.1063/1.2723075; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DOSEMETERS; DOSIMETRY; ELECTRON BEAMS; EPITAXY; LAYERS; MEV RANGE 01-10; NITROGEN IONS; P-N JUNCTIONS; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; SILICON; SUBSTRATES

Citation Formats

Bruzzi, M., Bucciolini, M., Casati, M., Menichelli, D., Talamonti, C., Piemonte, C., Svensson, B. G., INFN Firenze, Department of Clinical Physiopathology, University of Florence, Florence 50134, ITC-IRST, Divisione Microsistemi, via Sommarive 18-38050 Trento, and Department of Physics, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo. Epitaxial silicon devices for dosimetry applications. United States: N. p., 2007. Web. doi:10.1063/1.2723075.
Bruzzi, M., Bucciolini, M., Casati, M., Menichelli, D., Talamonti, C., Piemonte, C., Svensson, B. G., INFN Firenze, Department of Clinical Physiopathology, University of Florence, Florence 50134, ITC-IRST, Divisione Microsistemi, via Sommarive 18-38050 Trento, & Department of Physics, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo. Epitaxial silicon devices for dosimetry applications. United States. doi:10.1063/1.2723075.
Bruzzi, M., Bucciolini, M., Casati, M., Menichelli, D., Talamonti, C., Piemonte, C., Svensson, B. G., INFN Firenze, Department of Clinical Physiopathology, University of Florence, Florence 50134, ITC-IRST, Divisione Microsistemi, via Sommarive 18-38050 Trento, and Department of Physics, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo. Mon . "Epitaxial silicon devices for dosimetry applications". United States. doi:10.1063/1.2723075.
@article{osti_20971874,
title = {Epitaxial silicon devices for dosimetry applications},
author = {Bruzzi, M. and Bucciolini, M. and Casati, M. and Menichelli, D. and Talamonti, C. and Piemonte, C. and Svensson, B. G. and INFN Firenze, Department of Clinical Physiopathology, University of Florence, Florence 50134 and ITC-IRST, Divisione Microsistemi, via Sommarive 18-38050 Trento and Department of Physics, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo},
abstractNote = {A straightforward improvement of the efficiency and long term stability of silicon dosimeters has been obtained with a n{sup +}-p junction surrounded by a guard-ring structure implanted on an epitaxial p-type Si layer grown on a Czochralski substrate. The sensitivity of devices made on 50-{mu}m-thick epitaxial Si degrades by only 7% after an irradiation with 6 MeV electrons up to 1.5 kGy, and shows no significant further decay up to 10 kGy. These results prove the enhanced radiation tolerance and stability of epitaxial diodes as compared to present state-of-the-art Si devices.},
doi = {10.1063/1.2723075},
journal = {Applied Physics Letters},
number = 17,
volume = 90,
place = {United States},
year = {Mon Apr 23 00:00:00 EDT 2007},
month = {Mon Apr 23 00:00:00 EDT 2007}
}