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Title: Defect-driven gain bistability in neutron damaged, silicon bipolar transistors

Abstract

Using deep level transient spectroscopy, the authors have measured the defect spectrum in the collector of a n-p-n bipolar transistor following fast neutron irradiation as well as the gain on the same device. They show that a slow change observed in both the gain and deep level traps in the n-type collector at 300 K are bistable. The transistor gain and the defects can be returned to the postirradiation condition by forward bias at room temperature, i.e., by operating the transistor (gain) or injection through the base-collector diode (defect spectrum)

Authors:
; ; ; ;  [1]
  1. Sandia National Laboratories, Albuquerque, New Mexico 87185-1415 (United States)
Publication Date:
OSTI Identifier:
20971873
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 90; Journal Issue: 17; Other Information: DOI: 10.1063/1.2731516; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; FAST NEUTRONS; SEMICONDUCTOR MATERIALS; SILICON; TEMPERATURE RANGE 0273-0400 K; TRANSISTORS

Citation Formats

Fleming, R. M., Seager, C. H., Lang, D. V., Bielejec, E., and Campbell, J. M. Defect-driven gain bistability in neutron damaged, silicon bipolar transistors. United States: N. p., 2007. Web. doi:10.1063/1.2731516.
Fleming, R. M., Seager, C. H., Lang, D. V., Bielejec, E., & Campbell, J. M. Defect-driven gain bistability in neutron damaged, silicon bipolar transistors. United States. doi:10.1063/1.2731516.
Fleming, R. M., Seager, C. H., Lang, D. V., Bielejec, E., and Campbell, J. M. Mon . "Defect-driven gain bistability in neutron damaged, silicon bipolar transistors". United States. doi:10.1063/1.2731516.
@article{osti_20971873,
title = {Defect-driven gain bistability in neutron damaged, silicon bipolar transistors},
author = {Fleming, R. M. and Seager, C. H. and Lang, D. V. and Bielejec, E. and Campbell, J. M.},
abstractNote = {Using deep level transient spectroscopy, the authors have measured the defect spectrum in the collector of a n-p-n bipolar transistor following fast neutron irradiation as well as the gain on the same device. They show that a slow change observed in both the gain and deep level traps in the n-type collector at 300 K are bistable. The transistor gain and the defects can be returned to the postirradiation condition by forward bias at room temperature, i.e., by operating the transistor (gain) or injection through the base-collector diode (defect spectrum)},
doi = {10.1063/1.2731516},
journal = {Applied Physics Letters},
number = 17,
volume = 90,
place = {United States},
year = {Mon Apr 23 00:00:00 EDT 2007},
month = {Mon Apr 23 00:00:00 EDT 2007}
}