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Title: Behavior of implanted strontium in yttria-stabilized zirconia

Abstract

Yttria-stabilized zirconia (YSZ) is one of the promising candidates for application in the inert matrix fuel. This letter presents the effects of fission product strontium incorporation in the YSZ microstructure. The strontium ions were implanted at room temperature to a dose of 1x10{sup 17} ions/cm{sup 2} and that was followed by subsequently annealing at 1000 deg. C for 1-3 h. Transmission electron microscopy (TEM) was utilized to characterize the microstructure evolution after the implantation and/or annealing. No amorphization was observed in the YSZ matrix with a damage level of 200 dpa (displacements per atom). A layer of nanoscale strontium zirconate perovskite (SrZrO{sub 3}) precipitates formed in strontium-ion implanted YSZ single crystals after the annealing. Cross-sectional TEM revealed the crystalline particles of {approx}15 nm in size and they are crystallographically highly oriented with the YSZ matrix. The orientation relationship between the matrix and the precipitates has been determined as <011>{sub YSZ}(parallel sign)<111>{sub SrZrO{sub 3}}, (200){sub YSZ}(parallel sign)(110){sub SrZrO{sub 3}}. The interface is composed of misfit dislocations with b=1/2<200>{sub YSZ}.

Authors:
; ; ; ;  [1];  [2]
  1. Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, Michigan 48109-2104 (United States) and Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2104 (United States)
  2. (China)
Publication Date:
OSTI Identifier:
20971872
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 90; Journal Issue: 17; Other Information: DOI: 10.1063/1.2713127; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AMORPHOUS STATE; ANNEALING; ATOMIC DISPLACEMENTS; DISLOCATIONS; GRAIN BOUNDARIES; ION BEAMS; ION IMPLANTATION; MONOCRYSTALS; NANOSTRUCTURES; PARTICLES; PEROVSKITE; PRECIPITATION; STRONTIUM; STRONTIUM IONS; TEMPERATURE RANGE 0273-0400 K; TRANSMISSION ELECTRON MICROSCOPY; YTTRIUM OXIDES; ZIRCONATES; ZIRCONIUM OXIDES

Citation Formats

Zhu, S., Wang, S. X., Wang, L. M., Ewing, R. C., Zu, X. T., and Department of Applied Physics, University of Electronic and Technology of China, Chengdu 610054. Behavior of implanted strontium in yttria-stabilized zirconia. United States: N. p., 2007. Web. doi:10.1063/1.2713127.
Zhu, S., Wang, S. X., Wang, L. M., Ewing, R. C., Zu, X. T., & Department of Applied Physics, University of Electronic and Technology of China, Chengdu 610054. Behavior of implanted strontium in yttria-stabilized zirconia. United States. doi:10.1063/1.2713127.
Zhu, S., Wang, S. X., Wang, L. M., Ewing, R. C., Zu, X. T., and Department of Applied Physics, University of Electronic and Technology of China, Chengdu 610054. Mon . "Behavior of implanted strontium in yttria-stabilized zirconia". United States. doi:10.1063/1.2713127.
@article{osti_20971872,
title = {Behavior of implanted strontium in yttria-stabilized zirconia},
author = {Zhu, S. and Wang, S. X. and Wang, L. M. and Ewing, R. C. and Zu, X. T. and Department of Applied Physics, University of Electronic and Technology of China, Chengdu 610054},
abstractNote = {Yttria-stabilized zirconia (YSZ) is one of the promising candidates for application in the inert matrix fuel. This letter presents the effects of fission product strontium incorporation in the YSZ microstructure. The strontium ions were implanted at room temperature to a dose of 1x10{sup 17} ions/cm{sup 2} and that was followed by subsequently annealing at 1000 deg. C for 1-3 h. Transmission electron microscopy (TEM) was utilized to characterize the microstructure evolution after the implantation and/or annealing. No amorphization was observed in the YSZ matrix with a damage level of 200 dpa (displacements per atom). A layer of nanoscale strontium zirconate perovskite (SrZrO{sub 3}) precipitates formed in strontium-ion implanted YSZ single crystals after the annealing. Cross-sectional TEM revealed the crystalline particles of {approx}15 nm in size and they are crystallographically highly oriented with the YSZ matrix. The orientation relationship between the matrix and the precipitates has been determined as <011>{sub YSZ}(parallel sign)<111>{sub SrZrO{sub 3}}, (200){sub YSZ}(parallel sign)(110){sub SrZrO{sub 3}}. The interface is composed of misfit dislocations with b=1/2<200>{sub YSZ}.},
doi = {10.1063/1.2713127},
journal = {Applied Physics Letters},
number = 17,
volume = 90,
place = {United States},
year = {Mon Apr 23 00:00:00 EDT 2007},
month = {Mon Apr 23 00:00:00 EDT 2007}
}