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Title: Photoreflectance and reflectance investigation of deuterium-irradiated GaAsN

Abstract

The effect of deuterium irradiation on the optical and strain properties of GaAsN/GaAs heterostructures was investigated by photoreflectance and reflectance techniques. The strain occurring in as-grown and deuterated GaAsN layers is monitored and measured by means of photoreflectance spectroscopy, highlighting the strain inversion after irradiation. By combining static and modulated reflectance results, evidence is given that the deuterium-induced recovery of the GaAs band gap as well as the strain inversion in GaAsN layers are accompanied by a 0.4%-0.8% reduction of the refractive index in the 1.31 and 1.55 {mu}m spectral windows of interest for fiber optic communications. These results anticipate a single step process to an in-plane confinement of carriers and photons.

Authors:
; ; ; ; ; ; ; ; ; ; ; ;  [1];  [2];  [2];  [2]
  1. CNISM-Dipartimento di Fisica Universita di Parma, Viale delle Scienze 7a, I-43100 Parma (Italy)
  2. (Italy)
Publication Date:
OSTI Identifier:
20971855
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 90; Journal Issue: 9; Other Information: DOI: 10.1063/1.2709629; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHARGE CARRIERS; CONFINEMENT; DEUTERIUM; ENERGY GAP; EPITAXY; FIBER OPTICS; GALLIUM ARSENIDES; GALLIUM NITRIDES; HETEROJUNCTIONS; ION BEAMS; IRRADIATION; LAYERS; PHOTONS; REFLECTIVITY; REFRACTIVE INDEX; RESIDUAL STRESSES; SEMICONDUCTOR MATERIALS; SPECTROSCOPY

Citation Formats

Geddo, M., Ciabattoni, T., Guizzetti, G., Galli, M., Patrini, M., Polimeni, A., Trotta, R., Capizzi, M., Bais, G., Piccin, M., Rubini, S., Martelli, F., Franciosi, A., CNISM-Dipartimento di Fisica 'A. Volta', Universita di Pavia, Via Bassi 6, I-27100 Pavia, CNISM-Dipartimento di Fisica, Universita 'La Sapienza', P.le A. Moro 2, 00185 Rome, and Laboratorio Nazionale TASC-INFM-CNR, Area Science Park, S.S. 14, Km. 163.5, 34012 Trieste. Photoreflectance and reflectance investigation of deuterium-irradiated GaAsN. United States: N. p., 2007. Web. doi:10.1063/1.2709629.
Geddo, M., Ciabattoni, T., Guizzetti, G., Galli, M., Patrini, M., Polimeni, A., Trotta, R., Capizzi, M., Bais, G., Piccin, M., Rubini, S., Martelli, F., Franciosi, A., CNISM-Dipartimento di Fisica 'A. Volta', Universita di Pavia, Via Bassi 6, I-27100 Pavia, CNISM-Dipartimento di Fisica, Universita 'La Sapienza', P.le A. Moro 2, 00185 Rome, & Laboratorio Nazionale TASC-INFM-CNR, Area Science Park, S.S. 14, Km. 163.5, 34012 Trieste. Photoreflectance and reflectance investigation of deuterium-irradiated GaAsN. United States. doi:10.1063/1.2709629.
Geddo, M., Ciabattoni, T., Guizzetti, G., Galli, M., Patrini, M., Polimeni, A., Trotta, R., Capizzi, M., Bais, G., Piccin, M., Rubini, S., Martelli, F., Franciosi, A., CNISM-Dipartimento di Fisica 'A. Volta', Universita di Pavia, Via Bassi 6, I-27100 Pavia, CNISM-Dipartimento di Fisica, Universita 'La Sapienza', P.le A. Moro 2, 00185 Rome, and Laboratorio Nazionale TASC-INFM-CNR, Area Science Park, S.S. 14, Km. 163.5, 34012 Trieste. Mon . "Photoreflectance and reflectance investigation of deuterium-irradiated GaAsN". United States. doi:10.1063/1.2709629.
@article{osti_20971855,
title = {Photoreflectance and reflectance investigation of deuterium-irradiated GaAsN},
author = {Geddo, M. and Ciabattoni, T. and Guizzetti, G. and Galli, M. and Patrini, M. and Polimeni, A. and Trotta, R. and Capizzi, M. and Bais, G. and Piccin, M. and Rubini, S. and Martelli, F. and Franciosi, A. and CNISM-Dipartimento di Fisica 'A. Volta', Universita di Pavia, Via Bassi 6, I-27100 Pavia and CNISM-Dipartimento di Fisica, Universita 'La Sapienza', P.le A. Moro 2, 00185 Rome and Laboratorio Nazionale TASC-INFM-CNR, Area Science Park, S.S. 14, Km. 163.5, 34012 Trieste},
abstractNote = {The effect of deuterium irradiation on the optical and strain properties of GaAsN/GaAs heterostructures was investigated by photoreflectance and reflectance techniques. The strain occurring in as-grown and deuterated GaAsN layers is monitored and measured by means of photoreflectance spectroscopy, highlighting the strain inversion after irradiation. By combining static and modulated reflectance results, evidence is given that the deuterium-induced recovery of the GaAs band gap as well as the strain inversion in GaAsN layers are accompanied by a 0.4%-0.8% reduction of the refractive index in the 1.31 and 1.55 {mu}m spectral windows of interest for fiber optic communications. These results anticipate a single step process to an in-plane confinement of carriers and photons.},
doi = {10.1063/1.2709629},
journal = {Applied Physics Letters},
number = 9,
volume = 90,
place = {United States},
year = {Mon Feb 26 00:00:00 EST 2007},
month = {Mon Feb 26 00:00:00 EST 2007}
}