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Title: Observation of vertical honeycomb structure in InAlN/GaN heterostructures due to lateral phase separation

Abstract

The microstructure of In{sub x}Al{sub 1-x}N/GaN heterostructures (where x{approx}0.13-0.19), grown by molecular beam epitaxy, was investigated by transmission electron microscopy. Observations in the cross-section and plan-view geometries show evidence for lateral phase separation originating at the GaN surface that results in a vertical honeycomblike structure within the InAlN layers. The lateral dimensions of the honeycomb cells are {approx}5-10 nm. The vertical walls are In rich with a width of {approx}1-2 nm and align roughly perpendicular to <1120> and <1100> directions. The phase separation is attributed to random compositional fluctuations during the early stages of growth, possibly associated with misfit-strain relaxation.

Authors:
; ; ; ;  [1];  [2]
  1. Center for Solid State Science, Arizona State University, Tempe, Arizona 85287 and Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
20971844
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 90; Journal Issue: 8; Other Information: DOI: 10.1063/1.2696206; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM COMPOUNDS; CROSS SECTIONS; CRYSTAL GROWTH; GALLIUM NITRIDES; HETEROJUNCTIONS; HONEYCOMB STRUCTURES; INDIUM NITRIDES; LAYERS; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; RANDOMNESS; SEMICONDUCTOR MATERIALS; STRESS RELAXATION; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Zhou Lin, Smith, David J., McCartney, Martha R., Katzer, D. S., Storm, D. F., and U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375. Observation of vertical honeycomb structure in InAlN/GaN heterostructures due to lateral phase separation. United States: N. p., 2007. Web. doi:10.1063/1.2696206.
Zhou Lin, Smith, David J., McCartney, Martha R., Katzer, D. S., Storm, D. F., & U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375. Observation of vertical honeycomb structure in InAlN/GaN heterostructures due to lateral phase separation. United States. doi:10.1063/1.2696206.
Zhou Lin, Smith, David J., McCartney, Martha R., Katzer, D. S., Storm, D. F., and U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375. Mon . "Observation of vertical honeycomb structure in InAlN/GaN heterostructures due to lateral phase separation". United States. doi:10.1063/1.2696206.
@article{osti_20971844,
title = {Observation of vertical honeycomb structure in InAlN/GaN heterostructures due to lateral phase separation},
author = {Zhou Lin and Smith, David J. and McCartney, Martha R. and Katzer, D. S. and Storm, D. F. and U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375},
abstractNote = {The microstructure of In{sub x}Al{sub 1-x}N/GaN heterostructures (where x{approx}0.13-0.19), grown by molecular beam epitaxy, was investigated by transmission electron microscopy. Observations in the cross-section and plan-view geometries show evidence for lateral phase separation originating at the GaN surface that results in a vertical honeycomblike structure within the InAlN layers. The lateral dimensions of the honeycomb cells are {approx}5-10 nm. The vertical walls are In rich with a width of {approx}1-2 nm and align roughly perpendicular to <1120> and <1100> directions. The phase separation is attributed to random compositional fluctuations during the early stages of growth, possibly associated with misfit-strain relaxation.},
doi = {10.1063/1.2696206},
journal = {Applied Physics Letters},
number = 8,
volume = 90,
place = {United States},
year = {Mon Feb 19 00:00:00 EST 2007},
month = {Mon Feb 19 00:00:00 EST 2007}
}