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Title: Optically pumped GaN/AlGaN separate-confinement heterostructure laser grown along the (1120) nonpolar direction

Abstract

This letter concerns experiments on optically pumped GaN/AlGaN separate-confinement heterostructure laser structures grown by plasma assisted molecular beam epitaxy. The structures were grown along the (1120) nonpolar crystallographic direction on a bulk GaN substrate. Different widths of GaN quantum wells were applied in the studied structures. Laser action is clearly demonstrated by the spontaneous emission saturation, abrupt line narrowing, and strong TE polarization of output light. A lasing threshold was reached at an excitation power density of 260 kW/cm{sup 2} for a 700-{mu}m-long cavity at room temperature.

Authors:
; ; ; ; ; ; ; ; ; ; ;  [1]
  1. Institute of High Pressure Physics, Polish Academy of Sciences, ul. Sokolowska 29/37, 01-142 Warsaw (Poland)
Publication Date:
OSTI Identifier:
20971835
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 90; Journal Issue: 8; Other Information: DOI: 10.1063/1.2695825; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM COMPOUNDS; CRYSTAL GROWTH; CRYSTALLOGRAPHY; DEPOSITION; GALLIUM NITRIDES; LASER CAVITIES; LASERS; LINE NARROWING; MOLECULAR BEAM EPITAXY; PLASMA; POLARIZATION; QUANTUM WELLS; RESONATORS; SEMICONDUCTOR MATERIALS; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; VISIBLE RADIATION

Citation Formats

Teisseyre, H., Skierbiszewski, C., Khachapuridze, A., Feduniewicz-Zmuda, A., Siekacz, M., Lucznik, B., Kamler, G., Krysko, M., Suski, T., Perlin, P., Grzegory, I., and Porowski, S. Optically pumped GaN/AlGaN separate-confinement heterostructure laser grown along the (1120) nonpolar direction. United States: N. p., 2007. Web. doi:10.1063/1.2695825.
Teisseyre, H., Skierbiszewski, C., Khachapuridze, A., Feduniewicz-Zmuda, A., Siekacz, M., Lucznik, B., Kamler, G., Krysko, M., Suski, T., Perlin, P., Grzegory, I., & Porowski, S. Optically pumped GaN/AlGaN separate-confinement heterostructure laser grown along the (1120) nonpolar direction. United States. doi:10.1063/1.2695825.
Teisseyre, H., Skierbiszewski, C., Khachapuridze, A., Feduniewicz-Zmuda, A., Siekacz, M., Lucznik, B., Kamler, G., Krysko, M., Suski, T., Perlin, P., Grzegory, I., and Porowski, S. Mon . "Optically pumped GaN/AlGaN separate-confinement heterostructure laser grown along the (1120) nonpolar direction". United States. doi:10.1063/1.2695825.
@article{osti_20971835,
title = {Optically pumped GaN/AlGaN separate-confinement heterostructure laser grown along the (1120) nonpolar direction},
author = {Teisseyre, H. and Skierbiszewski, C. and Khachapuridze, A. and Feduniewicz-Zmuda, A. and Siekacz, M. and Lucznik, B. and Kamler, G. and Krysko, M. and Suski, T. and Perlin, P. and Grzegory, I. and Porowski, S.},
abstractNote = {This letter concerns experiments on optically pumped GaN/AlGaN separate-confinement heterostructure laser structures grown by plasma assisted molecular beam epitaxy. The structures were grown along the (1120) nonpolar crystallographic direction on a bulk GaN substrate. Different widths of GaN quantum wells were applied in the studied structures. Laser action is clearly demonstrated by the spontaneous emission saturation, abrupt line narrowing, and strong TE polarization of output light. A lasing threshold was reached at an excitation power density of 260 kW/cm{sup 2} for a 700-{mu}m-long cavity at room temperature.},
doi = {10.1063/1.2695825},
journal = {Applied Physics Letters},
number = 8,
volume = 90,
place = {United States},
year = {Mon Feb 19 00:00:00 EST 2007},
month = {Mon Feb 19 00:00:00 EST 2007}
}
  • Nonpolar multiple quantum wells (MQWs) have been grown by plasma assisted molecular beam epitaxy on bulk GaN crystals oriented along the (1120) direction. The photoluminescence intensity of the nonpolar MQWs was significantly higher than that found for the polar samples, both at low (10 K) and room temperature. This is a consequence of the lack of built-in electric field in samples grown along the (1120) direction. Clearly resolved spectra of the excitons have been observed in the studied MQWs. Studies of these excitonic structures, by means of polarization and temperature measurements enabled us to assign the observed lines to freemore » and bound excitons in GaN quantum wells.« less
  • The authors have observed laser emission with well-defined cavity modes in optically pumped GaN-Al{sub 0.1}Ga{sub 0.9}N double-heterostructure (DH) lasers. The laser structures were grown using an electron-cyclotron-resonance nitrogen-discharge source and gas-source molecular beam epitaxy (ECR-GSMBE) on thick ({ge} 10 {micro}m) GaN buffers grown by hydride vapor-phase epitaxy (HVPE) on c-plane sapphire. Transversely pumped cavities using a 337.1 nm nitrogen laser pump source exhibit a threshold pump fluence ranging from 0.15 to 0.3 mJ/cm{sup 2} at 77 K, a linear light output above threshold, a lasing wavelength of 358 nm, and an estimated differential quantum efficiency of 1%. The room-temperature thresholdmore » is about 1.7 times higher. Longitudinal mode structure has been resolved in a shorter-cavity (23 {micro}m) device at 77 K. The measured mode spacing of 0.56 nm corresponds to a group index of 5.0. Far-field measurements in a plane perpendicular to the plane of the heterostructure indicate a double-lobed pattern for a 1,000 {angstrom} thick GaN active region, and a single lobe with a FWHM of 60{degree} for a 4,000 {angstrom} active region. The thick HVPE GaN buffer layer provides for a lattice-matched growth and results in improved nucleation in MBE, as indicated by a high-quality reflection-electron-diffraction pattern of the as-loaded wafers. The surface morphology of the MBE layers on the HVPE buffer shows improved optical smoothness as compared to layers grown directly on sapphire using a low-temperature, MBE-grown GaN buffer. Laser facets were formed either by saw cutting or cleaving of the GaN buffer and epilayer along crystal planes. Details of the material development and laser performance are described.« less
  • The parameters of pulsed blue-violet (λ ≈ 430 nm at T = 300 K) lasers based on an AlGaN/InGaN/GaN structure with five InGaN quantum wells and transverse electron-beam pumping are studied. At room temperature of the active element, the minimum electron energy was 9 keV and the minimum threshold electron beam current density was 8 A cm{sup -2} at an electron energy of 18 keV. (lasers)
  • The results obtained in an investigation of the wide lasers with different resonator lengths prepared from InGaAsP/GaAs are given. (AIP)
  • The GaAs-GaAlAs graded-index separate confinement heterostructure was grown selectively by molecular beam epitaxy on a SiO/sub 2/-masked GaAs (100) substrate. The stripe windows on the SiO/sub 2/ mask were 10 ..mu..m in width and were oriented along (011-bar) direction. The laser diodes thus fabricated lased in a single longitudinal mode with a side mode suppression ratio of 95:1. Both the longitudinal mode and the single-lobe far-field pattern were stable up to 4I/sub th/.