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Title: Optically pumped GaN/AlGaN separate-confinement heterostructure laser grown along the (1120) nonpolar direction

Abstract

This letter concerns experiments on optically pumped GaN/AlGaN separate-confinement heterostructure laser structures grown by plasma assisted molecular beam epitaxy. The structures were grown along the (1120) nonpolar crystallographic direction on a bulk GaN substrate. Different widths of GaN quantum wells were applied in the studied structures. Laser action is clearly demonstrated by the spontaneous emission saturation, abrupt line narrowing, and strong TE polarization of output light. A lasing threshold was reached at an excitation power density of 260 kW/cm{sup 2} for a 700-{mu}m-long cavity at room temperature.

Authors:
; ; ; ; ; ; ; ; ; ; ;  [1]
  1. Institute of High Pressure Physics, Polish Academy of Sciences, ul. Sokolowska 29/37, 01-142 Warsaw (Poland)
Publication Date:
OSTI Identifier:
20971835
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 90; Journal Issue: 8; Other Information: DOI: 10.1063/1.2695825; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM COMPOUNDS; CRYSTAL GROWTH; CRYSTALLOGRAPHY; DEPOSITION; GALLIUM NITRIDES; LASER CAVITIES; LASERS; LINE NARROWING; MOLECULAR BEAM EPITAXY; PLASMA; POLARIZATION; QUANTUM WELLS; RESONATORS; SEMICONDUCTOR MATERIALS; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; VISIBLE RADIATION

Citation Formats

Teisseyre, H., Skierbiszewski, C., Khachapuridze, A., Feduniewicz-Zmuda, A., Siekacz, M., Lucznik, B., Kamler, G., Krysko, M., Suski, T., Perlin, P., Grzegory, I., and Porowski, S. Optically pumped GaN/AlGaN separate-confinement heterostructure laser grown along the (1120) nonpolar direction. United States: N. p., 2007. Web. doi:10.1063/1.2695825.
Teisseyre, H., Skierbiszewski, C., Khachapuridze, A., Feduniewicz-Zmuda, A., Siekacz, M., Lucznik, B., Kamler, G., Krysko, M., Suski, T., Perlin, P., Grzegory, I., & Porowski, S. Optically pumped GaN/AlGaN separate-confinement heterostructure laser grown along the (1120) nonpolar direction. United States. doi:10.1063/1.2695825.
Teisseyre, H., Skierbiszewski, C., Khachapuridze, A., Feduniewicz-Zmuda, A., Siekacz, M., Lucznik, B., Kamler, G., Krysko, M., Suski, T., Perlin, P., Grzegory, I., and Porowski, S. Mon . "Optically pumped GaN/AlGaN separate-confinement heterostructure laser grown along the (1120) nonpolar direction". United States. doi:10.1063/1.2695825.
@article{osti_20971835,
title = {Optically pumped GaN/AlGaN separate-confinement heterostructure laser grown along the (1120) nonpolar direction},
author = {Teisseyre, H. and Skierbiszewski, C. and Khachapuridze, A. and Feduniewicz-Zmuda, A. and Siekacz, M. and Lucznik, B. and Kamler, G. and Krysko, M. and Suski, T. and Perlin, P. and Grzegory, I. and Porowski, S.},
abstractNote = {This letter concerns experiments on optically pumped GaN/AlGaN separate-confinement heterostructure laser structures grown by plasma assisted molecular beam epitaxy. The structures were grown along the (1120) nonpolar crystallographic direction on a bulk GaN substrate. Different widths of GaN quantum wells were applied in the studied structures. Laser action is clearly demonstrated by the spontaneous emission saturation, abrupt line narrowing, and strong TE polarization of output light. A lasing threshold was reached at an excitation power density of 260 kW/cm{sup 2} for a 700-{mu}m-long cavity at room temperature.},
doi = {10.1063/1.2695825},
journal = {Applied Physics Letters},
number = 8,
volume = 90,
place = {United States},
year = {Mon Feb 19 00:00:00 EST 2007},
month = {Mon Feb 19 00:00:00 EST 2007}
}