Optically pumped GaN/AlGaN separate-confinement heterostructure laser grown along the (1120) nonpolar direction

Journal Article · Mon Feb 19 00:00:00 EST 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2695825· OSTI ID:20971835

Teisseyre, H; Skierbiszewski, C; Khachapuridze, A; Feduniewicz-Zmuda, A; Siekacz, M; Lucznik, B; Kamler, G; Krysko, M; Suski, T; Perlin, P; Grzegory, I; Porowski, S ^[1]

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1. Institute of High Pressure Physics, Polish Academy of Sciences, ul. Sokolowska 29/37, 01-142 Warsaw (Poland)

This letter concerns experiments on optically pumped GaN/AlGaN separate-confinement heterostructure laser structures grown by plasma assisted molecular beam epitaxy. The structures were grown along the (1120) nonpolar crystallographic direction on a bulk GaN substrate. Different widths of GaN quantum wells were applied in the studied structures. Laser action is clearly demonstrated by the spontaneous emission saturation, abrupt line narrowing, and strong TE polarization of output light. A lasing threshold was reached at an excitation power density of 260 kW/cm{sup 2} for a 700-{mu}m-long cavity at room temperature.

• OSTI ID: 20971835
• Journal Information: Applied Physics Letters, Vol. 90, Issue 8; Other Information: DOI: 10.1063/1.2695825; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM COMPOUNDS
CRYSTAL GROWTH
CRYSTALLOGRAPHY
DEPOSITION
GALLIUM NITRIDES
LASER CAVITIES
LASERS
LINE NARROWING
MOLECULAR BEAM EPITAXY
PLASMA
POLARIZATION
QUANTUM WELLS
RESONATORS
SEMICONDUCTOR MATERIALS
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
VISIBLE RADIATION