Discontinuous ion tracks on silicon oxide on silicon surfaces after grazing-angle heavy ion irradiation
- IES, UMR-CNRS 5214, cc082, Universite Montpellier 2, 34095 Montpellier Cedex 5 (France)
Thin silicon oxide layers on silicon have been characterized by atomic force microscopy before and after swift heavy ion irradiation with 0.63 MeV/u Pb ions at grazing angle of incidence. In this letter, the authors report the observation of extended intermittent tracks at the silicon oxide (SiO{sub 2}) surface. As a result, this raises the question of the discontinuous energy deposition at the nanometric scale. This experimental overlook is of major interest for nanostructuring and surface nanoprocessing as well as with regard to reliability of electronic components and systems.
- OSTI ID:
- 20971830
- Journal Information:
- Applied Physics Letters, Vol. 90, Issue 7; Other Information: DOI: 10.1063/1.2591255; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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