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Title: Reduction of traps and improvement of carrier lifetime in 4H-SiC epilayers by ion implantation

Abstract

The authors report a significant reduction in deep level defects and improvement of carrier lifetime in 4H-SiC material after carrying out carbon or silicon ion implantation into the shallow surface layer of 250 nm and subsequent annealing at 1600 deg. C or higher temperature. Reduction of Z{sub 1/2} and EH{sub 6/7} traps from 3x10{sup 13} cm{sup -3} to below the detection limit (5x10{sup 11} cm{sup -3}) was observed by deep level transient spectroscopy in the material 4 {mu}m underneath the implanted layer. Minority carrier lifetime almost doubled in the implanted samples compared to the unimplanted samples. The authors propose that the implanted layer acts as a source of carbon interstitials which indiffuse during annealing and accelerate annealing out of grown-in defects in the layer underneath the implanted region.

Authors:
;  [1]
  1. Central Research Institute of Electric Power Industry, 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196 (Japan)
Publication Date:
OSTI Identifier:
20971814
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 90; Journal Issue: 6; Other Information: DOI: 10.1063/1.2472530; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; CARBON; CARBON IONS; CARRIER LIFETIME; DEEP LEVEL TRANSIENT SPECTROSCOPY; EPITAXY; INTERSTITIALS; ION IMPLANTATION; LAYERS; SEMICONDUCTOR MATERIALS; SILICON; SILICON CARBIDES; SILICON IONS

Citation Formats

Storasta, Liutauras, and Tsuchida, Hidekazu. Reduction of traps and improvement of carrier lifetime in 4H-SiC epilayers by ion implantation. United States: N. p., 2007. Web. doi:10.1063/1.2472530.
Storasta, Liutauras, & Tsuchida, Hidekazu. Reduction of traps and improvement of carrier lifetime in 4H-SiC epilayers by ion implantation. United States. doi:10.1063/1.2472530.
Storasta, Liutauras, and Tsuchida, Hidekazu. Mon . "Reduction of traps and improvement of carrier lifetime in 4H-SiC epilayers by ion implantation". United States. doi:10.1063/1.2472530.
@article{osti_20971814,
title = {Reduction of traps and improvement of carrier lifetime in 4H-SiC epilayers by ion implantation},
author = {Storasta, Liutauras and Tsuchida, Hidekazu},
abstractNote = {The authors report a significant reduction in deep level defects and improvement of carrier lifetime in 4H-SiC material after carrying out carbon or silicon ion implantation into the shallow surface layer of 250 nm and subsequent annealing at 1600 deg. C or higher temperature. Reduction of Z{sub 1/2} and EH{sub 6/7} traps from 3x10{sup 13} cm{sup -3} to below the detection limit (5x10{sup 11} cm{sup -3}) was observed by deep level transient spectroscopy in the material 4 {mu}m underneath the implanted layer. Minority carrier lifetime almost doubled in the implanted samples compared to the unimplanted samples. The authors propose that the implanted layer acts as a source of carbon interstitials which indiffuse during annealing and accelerate annealing out of grown-in defects in the layer underneath the implanted region.},
doi = {10.1063/1.2472530},
journal = {Applied Physics Letters},
number = 6,
volume = 90,
place = {United States},
year = {Mon Feb 05 00:00:00 EST 2007},
month = {Mon Feb 05 00:00:00 EST 2007}
}