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Title: Perfectly tetragonal, tensile-strained Ge on Ge{sub 1-y}Sn{sub y} buffered Si(100)

Abstract

High-quality, tensile-strained Ge layers with variable thickness (>30 nm) have been deposited at low temperature (350-380 deg. C) on Si(100) via fully relaxed Ge{sub 1-y}Sn{sub y} buffers. The precise strain state of the epilayers is controlled by varying the Sn content of the buffer, yielding tunable tensile strains up to 0.25% for y=0.025. Combined Raman analysis and high resolution x-ray diffraction using multiple off-axis reflections reveal unequivocally that the symmetry of tensile Ge is perfectly tetragonal, while the strain state of the buffer ({approx}200 nm thick) remains essentially unchanged. A downshift of the direct gap consistent with tensile strain has been observed.

Authors:
; ; ; ; ; ;  [1];  [2]
  1. Department of Chemistry and Biochemistry, Arizona State University, Tempe AZ 85287 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
20971810
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 90; Journal Issue: 6; Other Information: DOI: 10.1063/1.2472273; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BUFFERS; CRYSTAL GROWTH; ENERGY GAP; GERMANIUM; GERMANIUM COMPOUNDS; LAYERS; MOLECULAR BEAM EPITAXY; RAMAN SPECTRA; RESIDUAL STRESSES; SEMICONDUCTOR MATERIALS; STRAINS; TEMPERATURE RANGE 0400-1000 K; THICKNESS; TIN COMPOUNDS; X-RAY DIFFRACTION

Citation Formats

Fang, Y.-Y., Tolle, J., Roucka, R., Chizmeshya, A. V. G., Kouvetakis, John, D'Costa, V. R., Menendez, Jose, and Department of Physics and Astronomy, Arizona State University, Tempe AZ 85287. Perfectly tetragonal, tensile-strained Ge on Ge{sub 1-y}Sn{sub y} buffered Si(100). United States: N. p., 2007. Web. doi:10.1063/1.2472273.
Fang, Y.-Y., Tolle, J., Roucka, R., Chizmeshya, A. V. G., Kouvetakis, John, D'Costa, V. R., Menendez, Jose, & Department of Physics and Astronomy, Arizona State University, Tempe AZ 85287. Perfectly tetragonal, tensile-strained Ge on Ge{sub 1-y}Sn{sub y} buffered Si(100). United States. doi:10.1063/1.2472273.
Fang, Y.-Y., Tolle, J., Roucka, R., Chizmeshya, A. V. G., Kouvetakis, John, D'Costa, V. R., Menendez, Jose, and Department of Physics and Astronomy, Arizona State University, Tempe AZ 85287. Mon . "Perfectly tetragonal, tensile-strained Ge on Ge{sub 1-y}Sn{sub y} buffered Si(100)". United States. doi:10.1063/1.2472273.
@article{osti_20971810,
title = {Perfectly tetragonal, tensile-strained Ge on Ge{sub 1-y}Sn{sub y} buffered Si(100)},
author = {Fang, Y.-Y. and Tolle, J. and Roucka, R. and Chizmeshya, A. V. G. and Kouvetakis, John and D'Costa, V. R. and Menendez, Jose and Department of Physics and Astronomy, Arizona State University, Tempe AZ 85287},
abstractNote = {High-quality, tensile-strained Ge layers with variable thickness (>30 nm) have been deposited at low temperature (350-380 deg. C) on Si(100) via fully relaxed Ge{sub 1-y}Sn{sub y} buffers. The precise strain state of the epilayers is controlled by varying the Sn content of the buffer, yielding tunable tensile strains up to 0.25% for y=0.025. Combined Raman analysis and high resolution x-ray diffraction using multiple off-axis reflections reveal unequivocally that the symmetry of tensile Ge is perfectly tetragonal, while the strain state of the buffer ({approx}200 nm thick) remains essentially unchanged. A downshift of the direct gap consistent with tensile strain has been observed.},
doi = {10.1063/1.2472273},
journal = {Applied Physics Letters},
number = 6,
volume = 90,
place = {United States},
year = {Mon Feb 05 00:00:00 EST 2007},
month = {Mon Feb 05 00:00:00 EST 2007}
}