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Title: Electron-beam-induced formation of Zn nanocrystal islands in a SiO{sub 2} layer

Abstract

Electron-beam-induced Zn nanocrystal islands were formed in a dielectric SiO{sub 2} layer. When a ZnO thin film on a p-type Si with amorphous SiO{sub x} interface layer is subjected to a 900 deg. C annealing followed by electron irradiation in a transmission electron microscope environment, an amorphous Zn{sub 2x}Si{sub 1-x}O{sub 2} layer is formed. Upon irradiation with a 300 keV electrons, metallic and single crystal nanoislands of Zn with {approx}7-10 nm diameter were formed and embedded within the SiO{sub 2} interface layer. Possible mechanisms for the formation of Zn nanocrystals are presented.

Authors:
; ; ; ; ; ;  [1];  [2];  [2];  [2];  [3]
  1. Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)
  2. (Korea, Republic of)
  3. (United States)
Publication Date:
OSTI Identifier:
20971801
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 90; Journal Issue: 5; Other Information: DOI: 10.1063/1.2450650; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; DIELECTRIC MATERIALS; ELECTRON BEAMS; INTERFACES; IRRADIATION; KEV RANGE 100-1000; LAYERS; MONOCRYSTALS; NANOSTRUCTURES; SILICON OXIDES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; ZINC; ZINC OXIDES

Citation Formats

Kim, Tae Whan, Shin, Jae Won, Lee, Jeong Yong, Jung, Jae Hun, Lee, Jung Wook, Choi, Won Kook, Jin, Sungho, Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Division of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, Thin Film Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791, and Materials Science and Engineering, University of California at San Diego, La Jolla, California 92093-0411. Electron-beam-induced formation of Zn nanocrystal islands in a SiO{sub 2} layer. United States: N. p., 2007. Web. doi:10.1063/1.2450650.
Kim, Tae Whan, Shin, Jae Won, Lee, Jeong Yong, Jung, Jae Hun, Lee, Jung Wook, Choi, Won Kook, Jin, Sungho, Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Division of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, Thin Film Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791, & Materials Science and Engineering, University of California at San Diego, La Jolla, California 92093-0411. Electron-beam-induced formation of Zn nanocrystal islands in a SiO{sub 2} layer. United States. doi:10.1063/1.2450650.
Kim, Tae Whan, Shin, Jae Won, Lee, Jeong Yong, Jung, Jae Hun, Lee, Jung Wook, Choi, Won Kook, Jin, Sungho, Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Division of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, Thin Film Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791, and Materials Science and Engineering, University of California at San Diego, La Jolla, California 92093-0411. Mon . "Electron-beam-induced formation of Zn nanocrystal islands in a SiO{sub 2} layer". United States. doi:10.1063/1.2450650.
@article{osti_20971801,
title = {Electron-beam-induced formation of Zn nanocrystal islands in a SiO{sub 2} layer},
author = {Kim, Tae Whan and Shin, Jae Won and Lee, Jeong Yong and Jung, Jae Hun and Lee, Jung Wook and Choi, Won Kook and Jin, Sungho and Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701 and Division of Electronics and Computer Engineering, Hanyang University, Seoul 133-791 and Thin Film Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791 and Materials Science and Engineering, University of California at San Diego, La Jolla, California 92093-0411},
abstractNote = {Electron-beam-induced Zn nanocrystal islands were formed in a dielectric SiO{sub 2} layer. When a ZnO thin film on a p-type Si with amorphous SiO{sub x} interface layer is subjected to a 900 deg. C annealing followed by electron irradiation in a transmission electron microscope environment, an amorphous Zn{sub 2x}Si{sub 1-x}O{sub 2} layer is formed. Upon irradiation with a 300 keV electrons, metallic and single crystal nanoislands of Zn with {approx}7-10 nm diameter were formed and embedded within the SiO{sub 2} interface layer. Possible mechanisms for the formation of Zn nanocrystals are presented.},
doi = {10.1063/1.2450650},
journal = {Applied Physics Letters},
number = 5,
volume = 90,
place = {United States},
year = {Mon Jan 29 00:00:00 EST 2007},
month = {Mon Jan 29 00:00:00 EST 2007}
}