In situ growth regime characterization of cubic GaN using reflection high energy electron diffraction
Abstract
Cubic GaN layers were grown by plasma-assisted molecular beam epitaxy on 3C-SiC (001) substrates. In situ reflection high energy electron diffraction was used to quantitatively determine the Ga coverage of the GaN surface during growth. Using the intensity of the electron beam as a probe, optimum growth conditions of c-GaN were found when a 1 ML Ga coverage is formed at the surface. 1 {mu}m thick c-GaN layers had a minimum surface roughness of 2.5 nm when a Ga coverage of 1 ML was established during growth. These samples revealed also a minimum full width at half maximum of the (002) rocking curve.
- Authors:
-
- Department of Physics, University of Paderborn, Warburger Strasse 100, D-33095 Paderborn (Germany)
- Publication Date:
- OSTI Identifier:
- 20971783
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 90; Journal Issue: 4; Other Information: DOI: 10.1063/1.2432293; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; CRYSTAL GROWTH; ELECTRON BEAMS; ELECTRON DIFFRACTION; GALLIUM NITRIDES; LAYERS; MOLECULAR BEAM EPITAXY; NEUTRON DIFFRACTION; PLASMA; REFLECTION; ROUGHNESS; SEMICONDUCTOR MATERIALS; SUBSTRATES
Citation Formats
Schoermann, J, Potthast, S, As, D J, and Lischka, K. In situ growth regime characterization of cubic GaN using reflection high energy electron diffraction. United States: N. p., 2007.
Web. doi:10.1063/1.2432293.
Schoermann, J, Potthast, S, As, D J, & Lischka, K. In situ growth regime characterization of cubic GaN using reflection high energy electron diffraction. United States. https://doi.org/10.1063/1.2432293
Schoermann, J, Potthast, S, As, D J, and Lischka, K. 2007.
"In situ growth regime characterization of cubic GaN using reflection high energy electron diffraction". United States. https://doi.org/10.1063/1.2432293.
@article{osti_20971783,
title = {In situ growth regime characterization of cubic GaN using reflection high energy electron diffraction},
author = {Schoermann, J and Potthast, S and As, D J and Lischka, K},
abstractNote = {Cubic GaN layers were grown by plasma-assisted molecular beam epitaxy on 3C-SiC (001) substrates. In situ reflection high energy electron diffraction was used to quantitatively determine the Ga coverage of the GaN surface during growth. Using the intensity of the electron beam as a probe, optimum growth conditions of c-GaN were found when a 1 ML Ga coverage is formed at the surface. 1 {mu}m thick c-GaN layers had a minimum surface roughness of 2.5 nm when a Ga coverage of 1 ML was established during growth. These samples revealed also a minimum full width at half maximum of the (002) rocking curve.},
doi = {10.1063/1.2432293},
url = {https://www.osti.gov/biblio/20971783},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 4,
volume = 90,
place = {United States},
year = {Mon Jan 22 00:00:00 EST 2007},
month = {Mon Jan 22 00:00:00 EST 2007}
}
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