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Title: Optically produced cross patterning based on local dislocations inside MgO single crystals

Abstract

Here, the authors demonstrate a unique technique to form dense dislocations locally inside a single crystal with a rocksalt-type structure using femtosecond laser irradiation for the first time, to our knowledge. Cross-shaped patterns of micrometer size, originating from densely introduced dislocations, are formed around the focal point. The authors controlled three-dimensional propagation of dislocations by adjusting the pulse energy of femtosecond laser and numerical aperture of objective lens.

Authors:
; ; ; ; ; ;  [1];  [2];  [3];  [2]
  1. International Innovation Center, Kyoto University, Nishikyo-ku, Kyoto 615-8510 (Japan)
  2. (Japan)
  3. (China)
Publication Date:
OSTI Identifier:
20960228
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 90; Journal Issue: 16; Other Information: DOI: 10.1063/1.2722669; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DISLOCATIONS; LASER RADIATION; MAGNESIUM OXIDES; MONOCRYSTALS; THREE-DIMENSIONAL CALCULATIONS

Citation Formats

Kanehira, Shingo, Miura, Kiyotaka, Fujita, Koji, Hirao, Kazuyuki, Si, Jinhai, Shibata, Naoya, Ikuhara, Yuichi, Department of Material Chemistry, Graduate School of Engineering, Kyoto University, Nishikyo-ku, Kyoto 615-8510, Department of Electronic Science and Technique, School of Electronics and Information Engineering, Xi'an Jiaotong University, Xianning-xilu 28, Xi'an, 710049, and Institute of Engineering Innovation, School of Engineering, University of Tokyo, 2-11-16, Yayoi, Bunkyo-ku, Tokyo 113-8656. Optically produced cross patterning based on local dislocations inside MgO single crystals. United States: N. p., 2007. Web. doi:10.1063/1.2722669.
Kanehira, Shingo, Miura, Kiyotaka, Fujita, Koji, Hirao, Kazuyuki, Si, Jinhai, Shibata, Naoya, Ikuhara, Yuichi, Department of Material Chemistry, Graduate School of Engineering, Kyoto University, Nishikyo-ku, Kyoto 615-8510, Department of Electronic Science and Technique, School of Electronics and Information Engineering, Xi'an Jiaotong University, Xianning-xilu 28, Xi'an, 710049, & Institute of Engineering Innovation, School of Engineering, University of Tokyo, 2-11-16, Yayoi, Bunkyo-ku, Tokyo 113-8656. Optically produced cross patterning based on local dislocations inside MgO single crystals. United States. doi:10.1063/1.2722669.
Kanehira, Shingo, Miura, Kiyotaka, Fujita, Koji, Hirao, Kazuyuki, Si, Jinhai, Shibata, Naoya, Ikuhara, Yuichi, Department of Material Chemistry, Graduate School of Engineering, Kyoto University, Nishikyo-ku, Kyoto 615-8510, Department of Electronic Science and Technique, School of Electronics and Information Engineering, Xi'an Jiaotong University, Xianning-xilu 28, Xi'an, 710049, and Institute of Engineering Innovation, School of Engineering, University of Tokyo, 2-11-16, Yayoi, Bunkyo-ku, Tokyo 113-8656. Mon . "Optically produced cross patterning based on local dislocations inside MgO single crystals". United States. doi:10.1063/1.2722669.
@article{osti_20960228,
title = {Optically produced cross patterning based on local dislocations inside MgO single crystals},
author = {Kanehira, Shingo and Miura, Kiyotaka and Fujita, Koji and Hirao, Kazuyuki and Si, Jinhai and Shibata, Naoya and Ikuhara, Yuichi and Department of Material Chemistry, Graduate School of Engineering, Kyoto University, Nishikyo-ku, Kyoto 615-8510 and Department of Electronic Science and Technique, School of Electronics and Information Engineering, Xi'an Jiaotong University, Xianning-xilu 28, Xi'an, 710049 and Institute of Engineering Innovation, School of Engineering, University of Tokyo, 2-11-16, Yayoi, Bunkyo-ku, Tokyo 113-8656},
abstractNote = {Here, the authors demonstrate a unique technique to form dense dislocations locally inside a single crystal with a rocksalt-type structure using femtosecond laser irradiation for the first time, to our knowledge. Cross-shaped patterns of micrometer size, originating from densely introduced dislocations, are formed around the focal point. The authors controlled three-dimensional propagation of dislocations by adjusting the pulse energy of femtosecond laser and numerical aperture of objective lens.},
doi = {10.1063/1.2722669},
journal = {Applied Physics Letters},
number = 16,
volume = 90,
place = {United States},
year = {Mon Apr 16 00:00:00 EDT 2007},
month = {Mon Apr 16 00:00:00 EDT 2007}
}
  • MgO{center{underscore}dot}nAl{sub 2}O{sub 3} spinel single crystals can be deformed plastically at high temperatures, displaying a range of interesting features. Stress-strain curves often exhibit strong work hardening followed by prominent work softening due to glide and climb processes. The critical resolved shear stress (CRSS) at a given temperature decreases dramatically, by almost 2 orders of magnitude, with increasing deviation from stoichiometry, i.e., as n increases from 1 to 3.5. The CRSS is proportional to exp({minus}T/T{sub 0}) and to [V{sub c}]{sup {minus}2}, where T is the temperature in kelvin, T{sub 0} a characteristic temperature, and [V{sub c}] the concentration of charge-compensating cationmore » vacancies. The Burgers vector is 1/2{l{underscore}angle}110{r{underscore}angle}, and slip can occur on {l{underscore}brace}111{r{underscore}brace} and {l{underscore}brace}110{r{underscore}brace} planes. Slip on {l{underscore}brace}111{r{underscore}brace} planes is believed to occur between the Kagome cation layer and the adjacent anion layer. Slip on {l{underscore}brace}110{r{underscore}brace} planes is slightly easier (and has a higher T{sub 0}), because the planes are more widely separated. The temperature dependence of the CRSS can be explained in terms of the Peierls stress for partial dislocations, either in terms of a steep and high Peierls potential or in terms of temperature and stress-dependent kink diffusion. The dependence of CRSS on [V{sub c}]{sup {minus}2} can be explained in terms of kink nucleation at cation vacancies.« less
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