Nanostructuring induced enhancement of radiation hardness in GaN epilayers
- Laboratory of Low-Dimensional Semiconductor Structures, Institute of Applied Physics, Academy of Sciences of Moldova, Chisinau 2028 (Moldova, Republic of) and National Center for Materials Study and Testing, Technical University of Moldova, Chisinau 2004 (Moldova)
The radiation hardness of as-grown and electrochemically nanostructured GaN epilayers against heavy ion irradiation was studied by means of photoluminescence (PL) and resonant Raman scattering (RRS) spectroscopy. A nanostructuring induced enhancement of the GaN radiation hardness by more than one order of magnitude was derived from the PL and RRS analyses. These findings show that electrochemical nanostructuring of GaN layers is a potentially attractive technology for the development of radiation hard devices.
- OSTI ID:
- 20960219
- Journal Information:
- Applied Physics Letters, Vol. 90, Issue 16; Other Information: DOI: 10.1063/1.2723076; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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