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Title: Nanostructuring induced enhancement of radiation hardness in GaN epilayers

Abstract

The radiation hardness of as-grown and electrochemically nanostructured GaN epilayers against heavy ion irradiation was studied by means of photoluminescence (PL) and resonant Raman scattering (RRS) spectroscopy. A nanostructuring induced enhancement of the GaN radiation hardness by more than one order of magnitude was derived from the PL and RRS analyses. These findings show that electrochemical nanostructuring of GaN layers is a potentially attractive technology for the development of radiation hard devices.

Authors:
; ; ; ; ;  [1];  [2];  [3]
  1. Laboratory of Low-Dimensional Semiconductor Structures, Institute of Applied Physics, Academy of Sciences of Moldova, Chisinau 2028 (Moldova, Republic of) and National Center for Materials Study and Testing, Technical University of Moldova, Chisinau 2004 (Moldova)
  2. (Russian Federation)
  3. (United States)
Publication Date:
OSTI Identifier:
20960219
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 90; Journal Issue: 16; Other Information: DOI: 10.1063/1.2723076; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTROCHEMISTRY; EPITAXY; GALLIUM NITRIDES; HARDNESS; HEAVY IONS; ION BEAMS; LAYERS; NANOSTRUCTURES; PHOTOLUMINESCENCE; RADIATION HARDENING; RAMAN EFFECT; RAMAN SPECTRA; SEMICONDUCTOR MATERIALS; SPECTROSCOPY

Citation Formats

Ursaki, V. V., Tiginyanu, I. M., Volciuc, O., Popa, V., Skuratov, V. A., Morkoc, H., Flerov Laboratory of Nuclear Reactions, Joint Institute for Nuclear Research, 141980 Dubna, Moscow region, and Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284 and Department of Physics, Virginia Commonwealth University, Richmond, Virginia 23284. Nanostructuring induced enhancement of radiation hardness in GaN epilayers. United States: N. p., 2007. Web. doi:10.1063/1.2723076.
Ursaki, V. V., Tiginyanu, I. M., Volciuc, O., Popa, V., Skuratov, V. A., Morkoc, H., Flerov Laboratory of Nuclear Reactions, Joint Institute for Nuclear Research, 141980 Dubna, Moscow region, & Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284 and Department of Physics, Virginia Commonwealth University, Richmond, Virginia 23284. Nanostructuring induced enhancement of radiation hardness in GaN epilayers. United States. doi:10.1063/1.2723076.
Ursaki, V. V., Tiginyanu, I. M., Volciuc, O., Popa, V., Skuratov, V. A., Morkoc, H., Flerov Laboratory of Nuclear Reactions, Joint Institute for Nuclear Research, 141980 Dubna, Moscow region, and Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284 and Department of Physics, Virginia Commonwealth University, Richmond, Virginia 23284. Mon . "Nanostructuring induced enhancement of radiation hardness in GaN epilayers". United States. doi:10.1063/1.2723076.
@article{osti_20960219,
title = {Nanostructuring induced enhancement of radiation hardness in GaN epilayers},
author = {Ursaki, V. V. and Tiginyanu, I. M. and Volciuc, O. and Popa, V. and Skuratov, V. A. and Morkoc, H. and Flerov Laboratory of Nuclear Reactions, Joint Institute for Nuclear Research, 141980 Dubna, Moscow region and Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284 and Department of Physics, Virginia Commonwealth University, Richmond, Virginia 23284},
abstractNote = {The radiation hardness of as-grown and electrochemically nanostructured GaN epilayers against heavy ion irradiation was studied by means of photoluminescence (PL) and resonant Raman scattering (RRS) spectroscopy. A nanostructuring induced enhancement of the GaN radiation hardness by more than one order of magnitude was derived from the PL and RRS analyses. These findings show that electrochemical nanostructuring of GaN layers is a potentially attractive technology for the development of radiation hard devices.},
doi = {10.1063/1.2723076},
journal = {Applied Physics Letters},
number = 16,
volume = 90,
place = {United States},
year = {Mon Apr 16 00:00:00 EDT 2007},
month = {Mon Apr 16 00:00:00 EDT 2007}
}
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