Phosphorus doping and hydrogen passivation of donors and defects in silicon nanowires synthesized by laser ablation

Journal Article · Mon Apr 09 00:00:00 EDT 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2721377· OSTI ID:20960214

Fukata, N; Chen, J; Sekiguchi, T; Matsushita, S; Oshima, T; Uchida, N; Murakami, K; Tsurui, T; Ito, S ^[1]

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1. Advanced Electronic Materials Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)

Phosphorus (P) doping was performed during the synthesis of silicon nanowires (SiNWs) by laser ablation. At least three types of signals were observed by electron spin resonance (ESR) at 4.2 K. Phosphorus doping into substitutional sites of crystalline Si in SiNWs was demonstrated by the detection of an ESR signal with a g value of 1.998, which corresponds to conduction electrons in crystalline Si, and by an energy-dispersive x-ray spectroscopy spectrum of the P K{alpha} line. The ESR results also revealed the presence of defects. These defects were partially passivated by hydrogen and oxygen atoms.

• OSTI ID: 20960214
• Journal Information: Applied Physics Letters, Vol. 90, Issue 15; Other Information: DOI: 10.1063/1.2721377; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABLATION
CHEMICAL ANALYSIS
CRYSTAL DEFECTS
ELECTRON SPIN RESONANCE
G VALUE
HYDROGEN
LANDE FACTOR
LASERS
PARAMAGNETISM
PASSIVATION
PHOSPHORUS
QUANTUM WIRES
SEMICONDUCTOR MATERIALS
SILICON
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0000-0013 K
X-RAY SPECTROSCOPY