Cubic HfO{sub 2} doped with Y{sub 2}O{sub 3} epitaxial films on GaAs (001) of enhanced dielectric constant

Yang, Z K; Lee, W C; Lee, Y J; Chang, P; Huang, M L; Hong, M; Hsu, C -H; Kwo, J

doi:10.1063/1.2722226

Title: Cubic HfO{sub 2} doped with Y{sub 2}O{sub 3} epitaxial films on GaAs (001) of enhanced dielectric constant

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Abstract

Nanometer thick cubic HfO{sub 2} doped with 19 at. % Y{sub 2}O{sub 3} (YDH) epitaxial films were grown on GaAs (001) using molecular beam epitaxy. Structural studies determined the epitaxial orientation relationships between the cubic YDH films and GaAs to be (001){sub GaAs}//(001){sub YDH} and [100]{sub GaAs}//[100]{sub YDH}. The YDH structure is strain relaxed with a lattice constant of 0.5122 nm with a small mosaic spread of 0.023 deg. and a twist angle of 2.9 deg. The YDH/GaAs interface is atomically abrupt without evidence of reacted interfacial layers. From C-V and I-V measurements a 7.7 nm thick YDH film has an enhanced dielectric constant {kappa}{approx}32, an equivalent oxide thickness of {approx}0.94 nm, an interfacial state density D{sub it}{approx}7x10{sup 12} cm{sup -2} eV{sup -1}, and a low leakage current density of 6x10{sup -5} A/cm{sup 2} at 1 V gate bias.

Authors:

Yang, Z K; Lee, W C; Lee, Y J; Chang, P; Huang, M L; Hong, M; Hsu, C -H; Kwo, J ^[1]

Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China)

Publication Date:: Mon Apr 09 00:00:00 EDT 2007

OSTI Identifier:: 20960211

Resource Type:: Journal Article

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 90; Journal Issue: 15; Other Information: DOI: 10.1063/1.2722226; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; CRYSTAL GROWTH; CUBIC LATTICES; DIELECTRIC MATERIALS; DOPED MATERIALS; GALLIUM ARSENIDES; GRAIN ORIENTATION; HAFNIUM OXIDES; INTERFACES; LATTICE PARAMETERS; LAYERS; LEAKAGE CURRENT; MOLECULAR BEAM EPITAXY; PERMITTIVITY; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION; YTTRIUM OXIDES

Citation Formats


                    Yang, Z K, Lee, W C, Lee, Y J, Chang, P, Huang, M L, Hong, M, Hsu, C -H, Kwo, J, Research Division, National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan, and Department of Physics, National Tsing Hua University, Hsinchu, 30013, Taiwan. Cubic HfO{sub 2} doped with Y{sub 2}O{sub 3} epitaxial films on GaAs (001) of enhanced dielectric constant.  United States: N. p., 2007. 
        Web.  doi:10.1063/1.2722226.

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                    Yang, Z K, Lee, W C, Lee, Y J, Chang, P, Huang, M L, Hong, M, Hsu, C -H, Kwo, J, Research Division, National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan, & Department of Physics, National Tsing Hua University, Hsinchu, 30013, Taiwan. Cubic HfO{sub 2} doped with Y{sub 2}O{sub 3} epitaxial films on GaAs (001) of enhanced dielectric constant.  United States.  https://doi.org/10.1063/1.2722226

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                    Yang, Z K, Lee, W C, Lee, Y J, Chang, P, Huang, M L, Hong, M, Hsu, C -H, Kwo, J, Research Division, National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan, and Department of Physics, National Tsing Hua University, Hsinchu, 30013, Taiwan. 2007.  
        "Cubic HfO{sub 2} doped with Y{sub 2}O{sub 3} epitaxial films on GaAs (001) of enhanced dielectric constant".  United States.  https://doi.org/10.1063/1.2722226.

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@article{osti_20960211,

  title        = {Cubic HfO{sub 2} doped with Y{sub 2}O{sub 3} epitaxial films on GaAs (001) of enhanced dielectric constant},

  author       = {Yang, Z K and Lee, W C and Lee, Y J and Chang, P and Huang, M L and Hong, M and Hsu, C -H and Kwo, J and Research Division, National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan and Department of Physics, National Tsing Hua University, Hsinchu, 30013, Taiwan},

  abstractNote = {Nanometer thick cubic HfO{sub 2} doped with 19 at. % Y{sub 2}O{sub 3} (YDH) epitaxial films were grown on GaAs (001) using molecular beam epitaxy. Structural studies determined the epitaxial orientation relationships between the cubic YDH films and GaAs to be (001){sub GaAs}//(001){sub YDH} and [100]{sub GaAs}//[100]{sub YDH}. The YDH structure is strain relaxed with a lattice constant of 0.5122 nm with a small mosaic spread of 0.023 deg. and a twist angle of 2.9 deg. The YDH/GaAs interface is atomically abrupt without evidence of reacted interfacial layers. From C-V and I-V measurements a 7.7 nm thick YDH film has an enhanced dielectric constant {kappa}{approx}32, an equivalent oxide thickness of {approx}0.94 nm, an interfacial state density D{sub it}{approx}7x10{sup 12} cm{sup -2} eV{sup -1}, and a low leakage current density of 6x10{sup -5} A/cm{sup 2} at 1 V gate bias.},

  doi          = {10.1063/1.2722226},

  url          = {https://www.osti.gov/biblio/20960211},
  journal      = {Applied Physics Letters},

  issn         = {0003-6951},

  number       = 15,

  volume       = 90,

  place        = {United States},

  year         = {Mon Apr 09 00:00:00 EDT 2007},

  month        = {Mon Apr 09 00:00:00 EDT 2007}

}

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