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Title: Low-temperature interface engineering for high-quality ZnO epitaxy on Si(111) substrate

Abstract

ZnO(0001)/Si(111) interface is engineered by using a three-step technique, involving low-temperature Mg deposition, oxidation, and MgO homoepitaxy. The double heterostructure of MgO(111)/Mg(0001)/Si(111) formed at -10 deg. C prevents the Si surface from oxidation and serves as an excellent template for single-domain ZnO epitaxy, which is confirmed with in situ reflection high-energy electron diffraction observation and ex situ characterization by transmission electron microscopy, x-ray diffraction, and photoluminescence. The low-temperature interface engineering method can also be applied to control other reactive metal/Si interfaces and obtain high-quality oxide templates accordingly.

Authors:
; ; ; ; ; ; ; ; ; ; ; ; ;  [1];  [2];  [3];  [3]
  1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China)
  2. (China) and Department of Physics, Tsinghua University, Beijing 100084 (China)
  3. (China)
Publication Date:
OSTI Identifier:
20960209
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 90; Journal Issue: 15; Other Information: DOI: 10.1063/1.2722225; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL GROWTH; DEPOSITION; ELECTRON DIFFRACTION; INTERFACES; LAYERS; MAGNESIUM; MAGNESIUM OXIDES; MOLECULAR BEAM EPITAXY; OXIDATION; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; SILICON; SUBSTRATES; TEMPERATURE RANGE 0065-0273 K; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION; ZINC OXIDES

Citation Formats

Wang, X. N., Wang, Y., Mei, Z. X., Dong, J., Zeng, Z. Q., Yuan, H. T., Zhang, T. C., Du, X. L., Jia, J. F., Xue, Q. K., Zhang, X. N., Zhang, Z., Li, Z. F., Lu, W., Institute of Physics, Chinese Academy of Sciences, Beijing 100080, Beijing University of Technology, Beijing 100022, and National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083. Low-temperature interface engineering for high-quality ZnO epitaxy on Si(111) substrate. United States: N. p., 2007. Web. doi:10.1063/1.2722225.
Wang, X. N., Wang, Y., Mei, Z. X., Dong, J., Zeng, Z. Q., Yuan, H. T., Zhang, T. C., Du, X. L., Jia, J. F., Xue, Q. K., Zhang, X. N., Zhang, Z., Li, Z. F., Lu, W., Institute of Physics, Chinese Academy of Sciences, Beijing 100080, Beijing University of Technology, Beijing 100022, & National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083. Low-temperature interface engineering for high-quality ZnO epitaxy on Si(111) substrate. United States. doi:10.1063/1.2722225.
Wang, X. N., Wang, Y., Mei, Z. X., Dong, J., Zeng, Z. Q., Yuan, H. T., Zhang, T. C., Du, X. L., Jia, J. F., Xue, Q. K., Zhang, X. N., Zhang, Z., Li, Z. F., Lu, W., Institute of Physics, Chinese Academy of Sciences, Beijing 100080, Beijing University of Technology, Beijing 100022, and National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083. Mon . "Low-temperature interface engineering for high-quality ZnO epitaxy on Si(111) substrate". United States. doi:10.1063/1.2722225.
@article{osti_20960209,
title = {Low-temperature interface engineering for high-quality ZnO epitaxy on Si(111) substrate},
author = {Wang, X. N. and Wang, Y. and Mei, Z. X. and Dong, J. and Zeng, Z. Q. and Yuan, H. T. and Zhang, T. C. and Du, X. L. and Jia, J. F. and Xue, Q. K. and Zhang, X. N. and Zhang, Z. and Li, Z. F. and Lu, W. and Institute of Physics, Chinese Academy of Sciences, Beijing 100080 and Beijing University of Technology, Beijing 100022 and National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083},
abstractNote = {ZnO(0001)/Si(111) interface is engineered by using a three-step technique, involving low-temperature Mg deposition, oxidation, and MgO homoepitaxy. The double heterostructure of MgO(111)/Mg(0001)/Si(111) formed at -10 deg. C prevents the Si surface from oxidation and serves as an excellent template for single-domain ZnO epitaxy, which is confirmed with in situ reflection high-energy electron diffraction observation and ex situ characterization by transmission electron microscopy, x-ray diffraction, and photoluminescence. The low-temperature interface engineering method can also be applied to control other reactive metal/Si interfaces and obtain high-quality oxide templates accordingly.},
doi = {10.1063/1.2722225},
journal = {Applied Physics Letters},
number = 15,
volume = 90,
place = {United States},
year = {Mon Apr 09 00:00:00 EDT 2007},
month = {Mon Apr 09 00:00:00 EDT 2007}
}