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Title: Relaxation of photoinduced spins and carriers in ferromagnetic InMnSb films

Abstract

The authors report time resolved measurements and control of photoinduced spin and carrier relaxations in InMnSb ferromagnetic films with 2% Mn content (grown by low-temperature molecular beam epitaxy) using femtosecond laser pulses, and compare them to analogous measurements on InBeSb and InSb films. In this work, magneto-optical Kerr effect and standard pump-probe techniques provided a direct measure of the photoexcited spin and carrier lifetimes, respectively. They observe decrease in relaxations times in the high laser fluence regime and an absence of temperature dependence of the relaxation times.

Authors:
; ; ; ; ; ; ;  [1]
  1. Department of Physics, Virginia Tech, Blacksburg, Virginia 24061 (United States)
Publication Date:
OSTI Identifier:
20960197
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 90; Journal Issue: 14; Other Information: DOI: 10.1063/1.2719173; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BERYLLIUM COMPOUNDS; CARRIER LIFETIME; CHARGE CARRIERS; CRYSTAL GROWTH; FERROMAGNETIC MATERIALS; INDIUM ANTIMONIDES; KERR EFFECT; LASERS; LAYERS; MAGNETIC SEMICONDUCTORS; MAGNETO-OPTICAL EFFECTS; MANGANESE COMPOUNDS; MOLECULAR BEAM EPITAXY; OPTICAL PUMPING; RELAXATION; RELAXATION TIME; SPIN; TEMPERATURE DEPENDENCE; THIN FILMS; TIME RESOLUTION

Citation Formats

Nontapot, K, Kini, R N, Gifford, A, Merritt, T R, Khodaparast, G A, Wojtowicz, T, Liu, X, Furdyna, J K, Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw, and Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556. Relaxation of photoinduced spins and carriers in ferromagnetic InMnSb films. United States: N. p., 2007. Web. doi:10.1063/1.2719173.
Nontapot, K, Kini, R N, Gifford, A, Merritt, T R, Khodaparast, G A, Wojtowicz, T, Liu, X, Furdyna, J K, Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw, & Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556. Relaxation of photoinduced spins and carriers in ferromagnetic InMnSb films. United States. https://doi.org/10.1063/1.2719173
Nontapot, K, Kini, R N, Gifford, A, Merritt, T R, Khodaparast, G A, Wojtowicz, T, Liu, X, Furdyna, J K, Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw, and Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556. 2007. "Relaxation of photoinduced spins and carriers in ferromagnetic InMnSb films". United States. https://doi.org/10.1063/1.2719173.
@article{osti_20960197,
title = {Relaxation of photoinduced spins and carriers in ferromagnetic InMnSb films},
author = {Nontapot, K and Kini, R N and Gifford, A and Merritt, T R and Khodaparast, G A and Wojtowicz, T and Liu, X and Furdyna, J K and Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw and Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556},
abstractNote = {The authors report time resolved measurements and control of photoinduced spin and carrier relaxations in InMnSb ferromagnetic films with 2% Mn content (grown by low-temperature molecular beam epitaxy) using femtosecond laser pulses, and compare them to analogous measurements on InBeSb and InSb films. In this work, magneto-optical Kerr effect and standard pump-probe techniques provided a direct measure of the photoexcited spin and carrier lifetimes, respectively. They observe decrease in relaxations times in the high laser fluence regime and an absence of temperature dependence of the relaxation times.},
doi = {10.1063/1.2719173},
url = {https://www.osti.gov/biblio/20960197}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 14,
volume = 90,
place = {United States},
year = {Mon Apr 02 00:00:00 EDT 2007},
month = {Mon Apr 02 00:00:00 EDT 2007}
}