Recombination dynamics of excitons in Mg{sub 0.11}Zn{sub 0.89}O alloy films grown using the high-temperature-annealed self-buffer layer by laser-assisted molecular-beam epitaxy
- Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573 (Japan) and NICP, ERATO, Japan Science and Technology (JST) Agency, Kawaguchi 332-0012 (Japan)
Recombination dynamics of excitons in Mg{sub 0.11}Zn{sub 0.89}O epilayers grown by laser-assisted molecular-beam epitaxy on a ScAlMgO{sub 4} substrate were investigated. By using the MgZnO high-temperature-annealed self-buffer layer (HITAB), the value of full width at half maximum of the near-band-edge (NBE) photoluminescence (PL) peak at 3.6 eV was decreased from 133 to 94 meV at 293 K, and the intensity ratio of the NBE emission to the deep emission band centered around 2.2 eV was increased by a factor of 3. Also, the PL lifetime of the NBE peak at 293 K under the excitation density of 1 {mu}J/cm{sup 2} was increased from 49 to 60 ps. These results suggest that HITAB gave rise to improved alloy compositional homogeneity and reduced concentration of point defects.
- OSTI ID:
- 20960194
- Journal Information:
- Applied Physics Letters, Vol. 90, Issue 14; Other Information: DOI: 10.1063/1.2719168; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ANNEALING
CRYSTAL GROWTH
EV RANGE 01-10
EXCITONS
FILMS
LASER MATERIALS
LASERS
LAYERS
MAGNESIUM ALLOYS
MAGNESIUM COMPOUNDS
MEV RANGE 10-100
MEV RANGE 100-1000
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
POINT DEFECTS
RECOMBINATION
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE 0273-0400 K
ZINC ALLOYS
ZINC OXIDES