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Title: Recombination dynamics of excitons in Mg{sub 0.11}Zn{sub 0.89}O alloy films grown using the high-temperature-annealed self-buffer layer by laser-assisted molecular-beam epitaxy

Abstract

Recombination dynamics of excitons in Mg{sub 0.11}Zn{sub 0.89}O epilayers grown by laser-assisted molecular-beam epitaxy on a ScAlMgO{sub 4} substrate were investigated. By using the MgZnO high-temperature-annealed self-buffer layer (HITAB), the value of full width at half maximum of the near-band-edge (NBE) photoluminescence (PL) peak at 3.6 eV was decreased from 133 to 94 meV at 293 K, and the intensity ratio of the NBE emission to the deep emission band centered around 2.2 eV was increased by a factor of 3. Also, the PL lifetime of the NBE peak at 293 K under the excitation density of 1 {mu}J/cm{sup 2} was increased from 49 to 60 ps. These results suggest that HITAB gave rise to improved alloy compositional homogeneity and reduced concentration of point defects.

Authors:
; ; ; ; ; ;  [1];  [2];  [2];  [2];  [3]
  1. Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573 (Japan) and NICP, ERATO, Japan Science and Technology (JST) Agency, Kawaguchi 332-0012 (Japan)
  2. (Japan)
  3. (JST) Agency, Kawaguchi 332-0012 (Japan)
Publication Date:
OSTI Identifier:
20960194
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 90; Journal Issue: 14; Other Information: DOI: 10.1063/1.2719168; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; CRYSTAL GROWTH; EV RANGE 01-10; EXCITONS; FILMS; LASER MATERIALS; LASERS; LAYERS; MAGNESIUM ALLOYS; MAGNESIUM COMPOUNDS; MEV RANGE 10-100; MEV RANGE 100-1000; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; POINT DEFECTS; RECOMBINATION; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE 0273-0400 K; ZINC ALLOYS; ZINC OXIDES

Citation Formats

Kubota, Masashi, Onuma, Takeyoshi, Tsukazaki, Atsushi, Ohtomo, Akira, Kawasaki, Masashi, Sota, Takayuki, Chichibu, Shigefusa F., Institute for Materials Research, Tohoku University, Aoba, Sendai 980-8577, Department of Electrical Engineering and Bioscience, Waseda University, 3-4-1 Ohkubo, Shinjuku 169-8555, Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, and Institute of Applied Physics and 21st Century COE Office, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan and Nakamura Inhomogeneous Crystal Project, ERATO, Japan Science and Technology. Recombination dynamics of excitons in Mg{sub 0.11}Zn{sub 0.89}O alloy films grown using the high-temperature-annealed self-buffer layer by laser-assisted molecular-beam epitaxy. United States: N. p., 2007. Web. doi:10.1063/1.2719168.
Kubota, Masashi, Onuma, Takeyoshi, Tsukazaki, Atsushi, Ohtomo, Akira, Kawasaki, Masashi, Sota, Takayuki, Chichibu, Shigefusa F., Institute for Materials Research, Tohoku University, Aoba, Sendai 980-8577, Department of Electrical Engineering and Bioscience, Waseda University, 3-4-1 Ohkubo, Shinjuku 169-8555, Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, & Institute of Applied Physics and 21st Century COE Office, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan and Nakamura Inhomogeneous Crystal Project, ERATO, Japan Science and Technology. Recombination dynamics of excitons in Mg{sub 0.11}Zn{sub 0.89}O alloy films grown using the high-temperature-annealed self-buffer layer by laser-assisted molecular-beam epitaxy. United States. doi:10.1063/1.2719168.
Kubota, Masashi, Onuma, Takeyoshi, Tsukazaki, Atsushi, Ohtomo, Akira, Kawasaki, Masashi, Sota, Takayuki, Chichibu, Shigefusa F., Institute for Materials Research, Tohoku University, Aoba, Sendai 980-8577, Department of Electrical Engineering and Bioscience, Waseda University, 3-4-1 Ohkubo, Shinjuku 169-8555, Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, and Institute of Applied Physics and 21st Century COE Office, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan and Nakamura Inhomogeneous Crystal Project, ERATO, Japan Science and Technology. Mon . "Recombination dynamics of excitons in Mg{sub 0.11}Zn{sub 0.89}O alloy films grown using the high-temperature-annealed self-buffer layer by laser-assisted molecular-beam epitaxy". United States. doi:10.1063/1.2719168.
@article{osti_20960194,
title = {Recombination dynamics of excitons in Mg{sub 0.11}Zn{sub 0.89}O alloy films grown using the high-temperature-annealed self-buffer layer by laser-assisted molecular-beam epitaxy},
author = {Kubota, Masashi and Onuma, Takeyoshi and Tsukazaki, Atsushi and Ohtomo, Akira and Kawasaki, Masashi and Sota, Takayuki and Chichibu, Shigefusa F. and Institute for Materials Research, Tohoku University, Aoba, Sendai 980-8577 and Department of Electrical Engineering and Bioscience, Waseda University, 3-4-1 Ohkubo, Shinjuku 169-8555 and Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577 and Institute of Applied Physics and 21st Century COE Office, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan and Nakamura Inhomogeneous Crystal Project, ERATO, Japan Science and Technology},
abstractNote = {Recombination dynamics of excitons in Mg{sub 0.11}Zn{sub 0.89}O epilayers grown by laser-assisted molecular-beam epitaxy on a ScAlMgO{sub 4} substrate were investigated. By using the MgZnO high-temperature-annealed self-buffer layer (HITAB), the value of full width at half maximum of the near-band-edge (NBE) photoluminescence (PL) peak at 3.6 eV was decreased from 133 to 94 meV at 293 K, and the intensity ratio of the NBE emission to the deep emission band centered around 2.2 eV was increased by a factor of 3. Also, the PL lifetime of the NBE peak at 293 K under the excitation density of 1 {mu}J/cm{sup 2} was increased from 49 to 60 ps. These results suggest that HITAB gave rise to improved alloy compositional homogeneity and reduced concentration of point defects.},
doi = {10.1063/1.2719168},
journal = {Applied Physics Letters},
number = 14,
volume = 90,
place = {United States},
year = {Mon Apr 02 00:00:00 EDT 2007},
month = {Mon Apr 02 00:00:00 EDT 2007}
}