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Title: Schottky barrier modulation on silicon nanowires

Abstract

Oxide charge on the sidewalls of SiO{sub 2} embedded silicon wires with 20x20 nm{sup 2} cross section is shown to influence the Schottky barrier height for Pd{sub 2}Si/Si junctions positioned on the end surfaces of the wires. Compared with results on planar silicon surfaces, the electron barrier height is 0.3 eV lower for wires investigated as fabricated. By increasing the oxide charge through irradiation by ultraviolet light, the electron barrier decreases by an additional 0.15 eV and the hole barrier correspondingly increases by about the same amount. The phenomenon is explained by assuming an oxide charge density in the range of 10{sup 12} cm{sup -2}.

Authors:
;  [1]
  1. Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Goeteborg (Sweden)
Publication Date:
OSTI Identifier:
20960180
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 90; Journal Issue: 13; Other Information: DOI: 10.1063/1.2717088; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CHARGE DENSITY; CROSS SECTIONS; ELECTRONS; PALLADIUM SILICIDES; QUANTUM WIRES; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SILICON; SILICON OXIDES; ULTRAVIOLET RADIATION

Citation Formats

Piscator, J., and Engstroem, O. Schottky barrier modulation on silicon nanowires. United States: N. p., 2007. Web. doi:10.1063/1.2717088.
Piscator, J., & Engstroem, O. Schottky barrier modulation on silicon nanowires. United States. doi:10.1063/1.2717088.
Piscator, J., and Engstroem, O. Mon . "Schottky barrier modulation on silicon nanowires". United States. doi:10.1063/1.2717088.
@article{osti_20960180,
title = {Schottky barrier modulation on silicon nanowires},
author = {Piscator, J. and Engstroem, O.},
abstractNote = {Oxide charge on the sidewalls of SiO{sub 2} embedded silicon wires with 20x20 nm{sup 2} cross section is shown to influence the Schottky barrier height for Pd{sub 2}Si/Si junctions positioned on the end surfaces of the wires. Compared with results on planar silicon surfaces, the electron barrier height is 0.3 eV lower for wires investigated as fabricated. By increasing the oxide charge through irradiation by ultraviolet light, the electron barrier decreases by an additional 0.15 eV and the hole barrier correspondingly increases by about the same amount. The phenomenon is explained by assuming an oxide charge density in the range of 10{sup 12} cm{sup -2}.},
doi = {10.1063/1.2717088},
journal = {Applied Physics Letters},
number = 13,
volume = 90,
place = {United States},
year = {Mon Mar 26 00:00:00 EDT 2007},
month = {Mon Mar 26 00:00:00 EDT 2007}
}