Self-limiting growth of tantalum oxide thin films by pulsed plasma-enhanced chemical vapor deposition
- Department of Chemical Engineering, Colorado School of Mines, Golden, Colorado 80401 and CMD Research LLC, Golden, Colorado 80401 (United States)
Ta{sub 2}O{sub 5} thin films were fabricated by pulsed plasma-enhanced chemical vapor deposition (PECVD) with simultaneous delivery of O{sub 2} and the metal precursor. By appropriately controlling the gas-phase environment self-limiting deposition at controllable rates ({approx}1 A ring /pulse) was obtained. The process was insensitive to substrate temperature, with a constant deposition rate observed from 90 to 350 deg. C. As-deposited Ta{sub 2}O{sub 5} films under these conditions displayed good dielectric properties. Performance improvements correlate strongly with film density and composition as measured by spectroscopic ellipsometry and Fourier transform infrared spectroscopy. Pulsed PECVD eliminates the need for gas actuation and inert purge steps required by atomic layer deposition.
- OSTI ID:
- 20960175
- Journal Information:
- Applied Physics Letters, Vol. 90, Issue 13; Other Information: DOI: 10.1063/1.2716310; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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