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Title: Photoluminescence characterization of Zn{sub 1-x}Mg{sub x}O epitaxial thin films grown on ZnO by radical source molecular beam epitaxy

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.2715475· OSTI ID:20960171
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  1. National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan)

The authors report that high-quality Zn{sub 1-x}Mg{sub x}O alloys are very brilliant light emitters, even more brilliant than ZnO, particularly in the high-temperature region; both the emission bandwidth and the oscillator strength of the photoluminescence from Zn{sub 1-x}Mg{sub x}O alloys increase remarkably with increasing Mg composition ratio x. The authors have revealed that the increase in the oscillator strength is mainly due to the increase in the activation energy required for the nonradiative recombination processes. Therefore, it is suggested that the localization of excitons, because of the compositional fluctuation, takes place in Zn{sub 1-x}Mg{sub x}O alloys and that the degree of the localization increases with increasing x.

OSTI ID:
20960171
Journal Information:
Applied Physics Letters, Vol. 90, Issue 12; Other Information: DOI: 10.1063/1.2715475; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English