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Title: Mechanism of molecular beam epitaxy growth of GaN nanowires on Si(111)

Abstract

GaN nanowires have been grown without external catalyst on Si(111) substrates by plasma-assisted molecular beam epitaxy. Nanowire aspect ratios (length/diameter) of about 250 have been achieved. During the initial stage of the growth, there is a nucleation process in which the number of wires increases and the most probable nucleation diameter of about 10 nm has been observed, which slowly increases with deposition time. For deposition time longer than the nucleation stage, the nanowire length as a function of diameter monotonically decreases. This phenomenon can be explained by adatom diffusion on the nanowire lateral surface towards the tip.

Authors:
; ; ; ; ;  [1]
  1. Institute of Bio- and Nanosystems (IBN-1) and Center of Nanoelectronic Systems for Information Technology (cni), Research Centre Juelich GmbH, D-52425 Juelich (Germany)
Publication Date:
OSTI Identifier:
20960168
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 90; Journal Issue: 12; Other Information: DOI: 10.1063/1.2715119; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ASPECT RATIO; CATALYSTS; CRYSTAL GROWTH; DEPOSITION; GALLIUM NITRIDES; LAYERS; MOLECULAR BEAM EPITAXY; NUCLEATION; PLASMA; QUANTUM DOTS; QUANTUM WIRES; SEMICONDUCTOR MATERIALS; SILICON; SUBSTRATES

Citation Formats

Debnath, R. K., Meijers, R., Richter, T., Stoica, T., Calarco, R., and Lueth, H. Mechanism of molecular beam epitaxy growth of GaN nanowires on Si(111). United States: N. p., 2007. Web. doi:10.1063/1.2715119.
Debnath, R. K., Meijers, R., Richter, T., Stoica, T., Calarco, R., & Lueth, H. Mechanism of molecular beam epitaxy growth of GaN nanowires on Si(111). United States. doi:10.1063/1.2715119.
Debnath, R. K., Meijers, R., Richter, T., Stoica, T., Calarco, R., and Lueth, H. Mon . "Mechanism of molecular beam epitaxy growth of GaN nanowires on Si(111)". United States. doi:10.1063/1.2715119.
@article{osti_20960168,
title = {Mechanism of molecular beam epitaxy growth of GaN nanowires on Si(111)},
author = {Debnath, R. K. and Meijers, R. and Richter, T. and Stoica, T. and Calarco, R. and Lueth, H.},
abstractNote = {GaN nanowires have been grown without external catalyst on Si(111) substrates by plasma-assisted molecular beam epitaxy. Nanowire aspect ratios (length/diameter) of about 250 have been achieved. During the initial stage of the growth, there is a nucleation process in which the number of wires increases and the most probable nucleation diameter of about 10 nm has been observed, which slowly increases with deposition time. For deposition time longer than the nucleation stage, the nanowire length as a function of diameter monotonically decreases. This phenomenon can be explained by adatom diffusion on the nanowire lateral surface towards the tip.},
doi = {10.1063/1.2715119},
journal = {Applied Physics Letters},
number = 12,
volume = 90,
place = {United States},
year = {Mon Mar 19 00:00:00 EDT 2007},
month = {Mon Mar 19 00:00:00 EDT 2007}
}
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