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Title: Effects of plasma immersion ion nitridation on dielectric properties of HfO{sub 2}

Abstract

Plasma immersion ion nitridation is used to produce thin HfO{sub 2} films with improved thermal and electrical properties. The film composition is investigated by examining the chemical shifts of the Hf 4f, Si 2p, and N 1s core-level spectra using x-ray photoelectron spectroscopy. The improved thermal stability and interfacial microstructure are further confirmed by high-resolution cross-sectional transmission electron microscopy. Electrical studies show an equivalent oxide thickness of about 1.25 nm, a negligible hysteresis of about 5 mV, and a low fixed charge density.

Authors:
; ; ; ;  [1];  [2]
  1. Department of Electronic Engineering, Chinese University of Hong Kong, Shatin, New Territories, Hong Kong (China)
  2. (China)
Publication Date:
OSTI Identifier:
20960165
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 90; Journal Issue: 12; Other Information: DOI: 10.1063/1.2715044; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHARGE DENSITY; CHEMICAL SHIFT; DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; HAFNIUM OXIDES; HYSTERESIS; INTERFACES; MICROSTRUCTURE; NITRIDATION; PLASMA; SEMICONDUCTOR MATERIALS; SILICON; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Wang, L., Xue, K., Xu, J. B., Huang, A. P., Chu, Paul K., and Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong. Effects of plasma immersion ion nitridation on dielectric properties of HfO{sub 2}. United States: N. p., 2007. Web. doi:10.1063/1.2715044.
Wang, L., Xue, K., Xu, J. B., Huang, A. P., Chu, Paul K., & Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong. Effects of plasma immersion ion nitridation on dielectric properties of HfO{sub 2}. United States. doi:10.1063/1.2715044.
Wang, L., Xue, K., Xu, J. B., Huang, A. P., Chu, Paul K., and Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong. Mon . "Effects of plasma immersion ion nitridation on dielectric properties of HfO{sub 2}". United States. doi:10.1063/1.2715044.
@article{osti_20960165,
title = {Effects of plasma immersion ion nitridation on dielectric properties of HfO{sub 2}},
author = {Wang, L. and Xue, K. and Xu, J. B. and Huang, A. P. and Chu, Paul K. and Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong},
abstractNote = {Plasma immersion ion nitridation is used to produce thin HfO{sub 2} films with improved thermal and electrical properties. The film composition is investigated by examining the chemical shifts of the Hf 4f, Si 2p, and N 1s core-level spectra using x-ray photoelectron spectroscopy. The improved thermal stability and interfacial microstructure are further confirmed by high-resolution cross-sectional transmission electron microscopy. Electrical studies show an equivalent oxide thickness of about 1.25 nm, a negligible hysteresis of about 5 mV, and a low fixed charge density.},
doi = {10.1063/1.2715044},
journal = {Applied Physics Letters},
number = 12,
volume = 90,
place = {United States},
year = {Mon Mar 19 00:00:00 EDT 2007},
month = {Mon Mar 19 00:00:00 EDT 2007}
}