Photoluminescence from low temperature grown InAs/GaAs quantum dots

Journal Article · Mon Mar 12 00:00:00 EDT 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2713803· OSTI ID:20960148

Sreenivasan, D; Haverkort, J E. M.; Eijkemans, T J; Noetzel, R ^[1]

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1. Department of Applied Physics, Eindhoven University of Technology, 5600MB Eindhoven(Netherlands)

The authors investigated a set of self-assembled InAs/GaAs quantum dots (QDs) formed by molecular beam epitaxy at low temperature (LT, 250 deg. C) and postgrowth annealing. A QD photoluminescence (PL) peak around 1.01 eV was observed. The PL efficiency quickly quenches between 6 and 40 K due to the tunneling out of the QD into traps within the GaAs barrier. The PL efficiency increases by a factor of 45-280 when exciting below the GaAs band gap, directly into the InAs QD layer. This points towards good optical quality QDs, which are embedded in a LT-GaAs barrier with a high trapping efficiency.

• OSTI ID: 20960148
• Journal Information: Applied Physics Letters, Vol. 90, Issue 11; Other Information: DOI: 10.1063/1.2713803; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CRYSTAL GROWTH
GALLIUM ARSENIDES
INDIUM ARSENIDES
LAYERS
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0000-0013 K
TEMPERATURE RANGE 0013-0065 K
TEMPERATURE RANGE 0400-1000 K
TRAPPING
TRAPS
TUNNEL EFFECT