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Title: Photoluminescence from low temperature grown InAs/GaAs quantum dots

Abstract

The authors investigated a set of self-assembled InAs/GaAs quantum dots (QDs) formed by molecular beam epitaxy at low temperature (LT, 250 deg. C) and postgrowth annealing. A QD photoluminescence (PL) peak around 1.01 eV was observed. The PL efficiency quickly quenches between 6 and 40 K due to the tunneling out of the QD into traps within the GaAs barrier. The PL efficiency increases by a factor of 45-280 when exciting below the GaAs band gap, directly into the InAs QD layer. This points towards good optical quality QDs, which are embedded in a LT-GaAs barrier with a high trapping efficiency.

Authors:
; ; ;  [1]
  1. Department of Applied Physics, Eindhoven University of Technology, 5600MB Eindhoven(Netherlands)
Publication Date:
OSTI Identifier:
20960148
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 90; Journal Issue: 11; Other Information: DOI: 10.1063/1.2713803; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; CRYSTAL GROWTH; GALLIUM ARSENIDES; INDIUM ARSENIDES; LAYERS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0000-0013 K; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0400-1000 K; TRAPPING; TRAPS; TUNNEL EFFECT

Citation Formats

Sreenivasan, D., Haverkort, J. E. M., Eijkemans, T. J., and Noetzel, R.. Photoluminescence from low temperature grown InAs/GaAs quantum dots. United States: N. p., 2007. Web. doi:10.1063/1.2713803.
Sreenivasan, D., Haverkort, J. E. M., Eijkemans, T. J., & Noetzel, R.. Photoluminescence from low temperature grown InAs/GaAs quantum dots. United States. doi:10.1063/1.2713803.
Sreenivasan, D., Haverkort, J. E. M., Eijkemans, T. J., and Noetzel, R.. Mon . "Photoluminescence from low temperature grown InAs/GaAs quantum dots". United States. doi:10.1063/1.2713803.
@article{osti_20960148,
title = {Photoluminescence from low temperature grown InAs/GaAs quantum dots},
author = {Sreenivasan, D. and Haverkort, J. E. M. and Eijkemans, T. J. and Noetzel, R.},
abstractNote = {The authors investigated a set of self-assembled InAs/GaAs quantum dots (QDs) formed by molecular beam epitaxy at low temperature (LT, 250 deg. C) and postgrowth annealing. A QD photoluminescence (PL) peak around 1.01 eV was observed. The PL efficiency quickly quenches between 6 and 40 K due to the tunneling out of the QD into traps within the GaAs barrier. The PL efficiency increases by a factor of 45-280 when exciting below the GaAs band gap, directly into the InAs QD layer. This points towards good optical quality QDs, which are embedded in a LT-GaAs barrier with a high trapping efficiency.},
doi = {10.1063/1.2713803},
journal = {Applied Physics Letters},
number = 11,
volume = 90,
place = {United States},
year = {Mon Mar 12 00:00:00 EDT 2007},
month = {Mon Mar 12 00:00:00 EDT 2007}
}