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Title: Elastic strain relaxation in axial Si/Ge whisker heterostructures

Abstract

The elastic behavior of molecular beam epitaxy-grown SiGe/Si(111) nanowhiskers (NWs) has been studied by means of electron microscopy, x-ray scattering, and numerical linear elasticity theory. Highly brilliant synchrotron radiation was applied to map the diffusely scattered intensity near the asymmetric (115) reciprocal lattice point. The larger lattice parameter with respect to the Si matrix causes a lateral lattice expansion within embedded Ge layers. This enables a clear separation of scattering due to NWs and laterally confined areas aside. Finite element calculations prove a lateral lattice compression in the Si matrix close to the NW apex above buried threefold and single Ge layer stacks. This suggests an incorporation probability, which additionally depends on the radial position within heteroepitaxial NWs.

Authors:
; ; ; ; ; ; ;  [1];  [2];  [2];  [2];  [3]
  1. Martin-Luther-Universitaet Halle-Wittenberg, Institut fuer Physik, Hoher Weg 8, D-06120 Halle (Germany)
  2. (Germany)
  3. (France)
Publication Date:
OSTI Identifier:
20957816
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review. B, Condensed Matter and Materials Physics; Journal Volume: 75; Journal Issue: 16; Other Information: DOI: 10.1103/PhysRevB.75.161303; (c) 2007 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ASYMMETRY; ELASTICITY; ELECTRON MICROSCOPY; FINITE ELEMENT METHOD; GERMANIUM; GERMANIUM SILICIDES; HETEROJUNCTIONS; LATTICE PARAMETERS; LAYERS; MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; RELAXATION; SEMICONDUCTOR MATERIALS; SILICON; STRAINS; SYNCHROTRON RADIATION; WHISKERS; X-RAY DIFFRACTION

Citation Formats

Hanke, M., Eisenschmidt, C., Werner, P., Zakharov, N. D., Syrowatka, F., Heyroth, F., Schaefer, P., Konovalov, O., Max-Planck Institut fuer Mikrostrukturphysik, Weinberg 2, D-06120 Halle, Interdisziplinaeres Zentrum fuer Materialwissenschaften, Heinrich-Damerow-Strasse 4, D-06120 Halle, Humboldt-Universitaet zu Berlin, Institut fuer Physik, Newtonstrasse 15, D-12489 Berlin, and European Synchrotron Radiation Facility, BP 220, F-38043 Grenoble Cedex. Elastic strain relaxation in axial Si/Ge whisker heterostructures. United States: N. p., 2007. Web. doi:10.1103/PHYSREVB.75.161303.
Hanke, M., Eisenschmidt, C., Werner, P., Zakharov, N. D., Syrowatka, F., Heyroth, F., Schaefer, P., Konovalov, O., Max-Planck Institut fuer Mikrostrukturphysik, Weinberg 2, D-06120 Halle, Interdisziplinaeres Zentrum fuer Materialwissenschaften, Heinrich-Damerow-Strasse 4, D-06120 Halle, Humboldt-Universitaet zu Berlin, Institut fuer Physik, Newtonstrasse 15, D-12489 Berlin, & European Synchrotron Radiation Facility, BP 220, F-38043 Grenoble Cedex. Elastic strain relaxation in axial Si/Ge whisker heterostructures. United States. doi:10.1103/PHYSREVB.75.161303.
Hanke, M., Eisenschmidt, C., Werner, P., Zakharov, N. D., Syrowatka, F., Heyroth, F., Schaefer, P., Konovalov, O., Max-Planck Institut fuer Mikrostrukturphysik, Weinberg 2, D-06120 Halle, Interdisziplinaeres Zentrum fuer Materialwissenschaften, Heinrich-Damerow-Strasse 4, D-06120 Halle, Humboldt-Universitaet zu Berlin, Institut fuer Physik, Newtonstrasse 15, D-12489 Berlin, and European Synchrotron Radiation Facility, BP 220, F-38043 Grenoble Cedex. Sun . "Elastic strain relaxation in axial Si/Ge whisker heterostructures". United States. doi:10.1103/PHYSREVB.75.161303.
@article{osti_20957816,
title = {Elastic strain relaxation in axial Si/Ge whisker heterostructures},
author = {Hanke, M. and Eisenschmidt, C. and Werner, P. and Zakharov, N. D. and Syrowatka, F. and Heyroth, F. and Schaefer, P. and Konovalov, O. and Max-Planck Institut fuer Mikrostrukturphysik, Weinberg 2, D-06120 Halle and Interdisziplinaeres Zentrum fuer Materialwissenschaften, Heinrich-Damerow-Strasse 4, D-06120 Halle and Humboldt-Universitaet zu Berlin, Institut fuer Physik, Newtonstrasse 15, D-12489 Berlin and European Synchrotron Radiation Facility, BP 220, F-38043 Grenoble Cedex},
abstractNote = {The elastic behavior of molecular beam epitaxy-grown SiGe/Si(111) nanowhiskers (NWs) has been studied by means of electron microscopy, x-ray scattering, and numerical linear elasticity theory. Highly brilliant synchrotron radiation was applied to map the diffusely scattered intensity near the asymmetric (115) reciprocal lattice point. The larger lattice parameter with respect to the Si matrix causes a lateral lattice expansion within embedded Ge layers. This enables a clear separation of scattering due to NWs and laterally confined areas aside. Finite element calculations prove a lateral lattice compression in the Si matrix close to the NW apex above buried threefold and single Ge layer stacks. This suggests an incorporation probability, which additionally depends on the radial position within heteroepitaxial NWs.},
doi = {10.1103/PHYSREVB.75.161303},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 16,
volume = 75,
place = {United States},
year = {Sun Apr 15 00:00:00 EDT 2007},
month = {Sun Apr 15 00:00:00 EDT 2007}
}