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Title: Sculpting Semiconductor Heteroepitaxial Islands: From Dots to Rods

Abstract

In the Ge on Si model heteroepitaxial system, metal patterns on the silicon surface provide unprecedented control over the morphology of highly ordered Ge islands. Island shape including nanorods and truncated pyramids is set by the metal species and substrate orientation. Analysis of island faceting elucidates the prominent role of the metal in promoting growth of preferred facet orientations while investigations of island composition and structure reveal the importance of Si-Ge intermixing in island evolution. These effects reflect a remarkable combination of metal-mediated growth phenomena that may be exploited to tailor the functionality of island arrays in heteroepitaxial systems.

Authors:
; ;  [1];  [2]; ;  [3]; ;  [4];  [5];  [6];  [6];  [7]
  1. Department of Materials Science and Engineering, University of California, Berkeley, California 94720 (United States)
  2. (United States)
  3. Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
  4. Department of Materials Science and Engineering, University of Wisconsin, Madison, Wisconsin 53706 (United States)
  5. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
  6. Max-Planck-Institut fuer Festkoerperforschung, Heisenbergstrasse 1, D-70569 Stuttgart (Germany)
  7. (Germany)
Publication Date:
OSTI Identifier:
20957730
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review Letters; Journal Volume: 98; Journal Issue: 10; Other Information: DOI: 10.1103/PhysRevLett.98.106102; (c) 2007 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL GROWTH; GRAIN ORIENTATION; MAGNETIC ISLANDS; METALS; MORPHOLOGY; NANOSTRUCTURES; RODS; SEMICONDUCTOR MATERIALS; SILICON; SUBSTRATES

Citation Formats

Robinson, J. T., Cao, Y., Dubon, O. D., Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, Walko, D. A., Arms, D. A., Tinberg, D. S., Evans, P. G., Liddle, J. A., Rastelli, A., Schmidt, O. G., and Institute for Integrative Nanoscience, IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden. Sculpting Semiconductor Heteroepitaxial Islands: From Dots to Rods. United States: N. p., 2007. Web. doi:10.1103/PHYSREVLETT.98.106102.
Robinson, J. T., Cao, Y., Dubon, O. D., Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, Walko, D. A., Arms, D. A., Tinberg, D. S., Evans, P. G., Liddle, J. A., Rastelli, A., Schmidt, O. G., & Institute for Integrative Nanoscience, IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden. Sculpting Semiconductor Heteroepitaxial Islands: From Dots to Rods. United States. doi:10.1103/PHYSREVLETT.98.106102.
Robinson, J. T., Cao, Y., Dubon, O. D., Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, Walko, D. A., Arms, D. A., Tinberg, D. S., Evans, P. G., Liddle, J. A., Rastelli, A., Schmidt, O. G., and Institute for Integrative Nanoscience, IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden. Fri . "Sculpting Semiconductor Heteroepitaxial Islands: From Dots to Rods". United States. doi:10.1103/PHYSREVLETT.98.106102.
@article{osti_20957730,
title = {Sculpting Semiconductor Heteroepitaxial Islands: From Dots to Rods},
author = {Robinson, J. T. and Cao, Y. and Dubon, O. D. and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 and Walko, D. A. and Arms, D. A. and Tinberg, D. S. and Evans, P. G. and Liddle, J. A. and Rastelli, A. and Schmidt, O. G. and Institute for Integrative Nanoscience, IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden},
abstractNote = {In the Ge on Si model heteroepitaxial system, metal patterns on the silicon surface provide unprecedented control over the morphology of highly ordered Ge islands. Island shape including nanorods and truncated pyramids is set by the metal species and substrate orientation. Analysis of island faceting elucidates the prominent role of the metal in promoting growth of preferred facet orientations while investigations of island composition and structure reveal the importance of Si-Ge intermixing in island evolution. These effects reflect a remarkable combination of metal-mediated growth phenomena that may be exploited to tailor the functionality of island arrays in heteroepitaxial systems.},
doi = {10.1103/PHYSREVLETT.98.106102},
journal = {Physical Review Letters},
number = 10,
volume = 98,
place = {United States},
year = {Fri Mar 09 00:00:00 EST 2007},
month = {Fri Mar 09 00:00:00 EST 2007}
}