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Title: Formation and Thickness Evolution of Periodic Twin Domains in Manganite Films Grown on SrTiO{sub 3}(001) Substrates

Abstract

We present an extended synchrotron x-ray scattering study of the structure of thin manganite films grown on SrTiO{sub 3}(001) substrates and reveal a new kind of misfit strain relaxation process which exploits twinning to adjust lattice mismatch. We show that this relaxation mechanism emerges in thin films as one-dimensional twinning waves which freeze out into a twin domain pattern as the manganite film continues to grow. A quantitative microscopic model which uses a matrix formalism is able to reproduce all x-ray features and provides a detailed insight into this novel relaxation mechanism. We further demonstrate how this twin angle pattern affects the transport properties in these functional films.

Authors:
; ; ; ;  [1]; ;  [2]
  1. Max-Planck-Institut fuer Metallforschung, Heisenbergstrasse 3, 70569 Stuttgart (Germany)
  2. Max-Planck-Institut fuer Festkoerperforschung, Heisenbergstrasse 1, 70569 Stuttgart (Germany)
Publication Date:
OSTI Identifier:
20957708
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review Letters; Journal Volume: 98; Journal Issue: 9; Other Information: DOI: 10.1103/PhysRevLett.98.096101; (c) 2007 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL DEFECTS; FREEZING OUT; PERIODICITY; RELAXATION; STRONTIUM TITANATES; SUBSTRATES; SYNCHROTRONS; THICKNESS; THIN FILMS; X-RAY DIFFRACTION

Citation Formats

Gebhardt, U., Kasper, N. V., Vigliante, A., Wochner, P., Dosch, H., Razavi, F. S., and Habermeier, H.-U. Formation and Thickness Evolution of Periodic Twin Domains in Manganite Films Grown on SrTiO{sub 3}(001) Substrates. United States: N. p., 2007. Web. doi:10.1103/PHYSREVLETT.98.096101.
Gebhardt, U., Kasper, N. V., Vigliante, A., Wochner, P., Dosch, H., Razavi, F. S., & Habermeier, H.-U. Formation and Thickness Evolution of Periodic Twin Domains in Manganite Films Grown on SrTiO{sub 3}(001) Substrates. United States. doi:10.1103/PHYSREVLETT.98.096101.
Gebhardt, U., Kasper, N. V., Vigliante, A., Wochner, P., Dosch, H., Razavi, F. S., and Habermeier, H.-U. Fri . "Formation and Thickness Evolution of Periodic Twin Domains in Manganite Films Grown on SrTiO{sub 3}(001) Substrates". United States. doi:10.1103/PHYSREVLETT.98.096101.
@article{osti_20957708,
title = {Formation and Thickness Evolution of Periodic Twin Domains in Manganite Films Grown on SrTiO{sub 3}(001) Substrates},
author = {Gebhardt, U. and Kasper, N. V. and Vigliante, A. and Wochner, P. and Dosch, H. and Razavi, F. S. and Habermeier, H.-U.},
abstractNote = {We present an extended synchrotron x-ray scattering study of the structure of thin manganite films grown on SrTiO{sub 3}(001) substrates and reveal a new kind of misfit strain relaxation process which exploits twinning to adjust lattice mismatch. We show that this relaxation mechanism emerges in thin films as one-dimensional twinning waves which freeze out into a twin domain pattern as the manganite film continues to grow. A quantitative microscopic model which uses a matrix formalism is able to reproduce all x-ray features and provides a detailed insight into this novel relaxation mechanism. We further demonstrate how this twin angle pattern affects the transport properties in these functional films.},
doi = {10.1103/PHYSREVLETT.98.096101},
journal = {Physical Review Letters},
number = 9,
volume = 98,
place = {United States},
year = {Fri Mar 02 00:00:00 EST 2007},
month = {Fri Mar 02 00:00:00 EST 2007}
}
  • We present an extended synchrotron x-ray scattering study of the structure of thin manganite films grown on SrTiO3(001) substrates and reveal a new kind of misfit strain relaxation process which exploits twinning to adjust lattice mismatch. We show that this relaxation mechanism emerges in thin films as one-dimensional twinning waves which freeze out into a twin domain pattern as the manganite film continues to grow. A quantitative microscopic model which uses a matrix formalism is able to reproduce all x-ray features and provides a detailed insight into this novel relaxation mechanism. We further demonstrate how this twin angle pattern affectsmore » the transport properties in these functional films.« less
  • We investigated infrared-active phonons of CaTiO3, SrTiO3, BaTiO3, and Ba0.5Sr0.5TiO3 thin films, and a (BaTiO3)5/(SrTiO3)5 artificial superlattice by a Fourier transform infrared spectrometer with a grazing angle (48{sup o}) incident reflectance method. The longitudinal phonon energies of the thin films were different from those of the bulk material due to the lattice strain of the substrate. The Ba0.5Sr0.5TiO3 thin film and (BaTiO3)5/(SrTiO3)5 superlattice showed different phonon modes due to structural discrepancies, even though their chemical compositions are similar. The Ba0.5Sr0.5TiO3 thin film showed a single phonon energy lying between the phonon energies of BaTiO3 and SrTiO3 thin films, while themore » (BaTiO3)5/(SrTiO3)5 superlattice well preserved the characteristic phonon modes of BaTiO3 and SrTiO3 thin films.« less
  • Strontium titanate, SrTiO{sub 3} (STO), thin films incorporated with lanthanum are grown on Si (001) substrates at a thickness range of 5–25 nm. Atomic layer deposition (ALD) is used to grow the La{sub x}Sr{sub 1−x}TiO{sub 3} (La:STO) films after buffering the Si (001) substrate with four-unit-cells of STO deposited by molecular beam epitaxy. The crystalline structure and orientation of the La:STO films are confirmed via reflection high-energy electron diffraction, X-ray diffraction, and cross-sectional transmission electron microscopy. The low temperature ALD growth (∼225 °C) and post-deposition annealing at 550 °C for 5 min maintains an abrupt interface between Si (001) and the crystalline oxide. Highermore » annealing temperatures (650 °C) show more complete La activation with film resistivities of ∼2.0 × 10{sup −2} Ω cm for 20-nm-thick La:STO (x ∼ 0.15); however, the STO-Si interface is slightly degraded due to the increased annealing temperature. To demonstrate the selective incorporation of lanthanum by ALD, a layered heterostructure is grown with an undoped STO layer sandwiched between two conductive La:STO layers. Based on this work, an epitaxial oxide stack centered on La:STO and BaTiO{sub 3} integrated with Si is envisioned as a material candidate for a ferroelectric field-effect transistor.« less
  • L1{sub 0}–FePt(001) single-crystal films were grown epitaxially on SrTiO{sub 3}(001), MgAl{sub 2}O{sub 4}(001), and MgO(001) substrates. Their uniaxial magnetic anisotropy K{sub u} and the order structure were examined for the film thickness t range of 2–14 nm. All series of films show large K{sub u} of 4 × 10{sup 7} erg/cm{sup 3} in the thickness range higher than 10 nm, with order parameter S of 0.8 and saturation magnetization M{sub s} of 1120 emu/cm{sup 3}. K{sub u} decreased gradually as t decreased. The K{sub u} reduction was considerable when t decreased from 4 nm to 2 nm. No marked difference in the thickness dependence of K{sub u} wasmore » found in any series of films, although the lattice mismatch between FePt and the substrates was markedly different. K{sub u} reduction showed good agreement with the reduction of S for the films on MgAl{sub 2}O{sub 4} and MgO. The K{sub u} ∼ S{sup 2} plot showed an almost linear relation, which is in good agreement with theoretical predictions. Transmission electron microscopy images for a FePt film on MgO substrate revealed that the lattice mismatch between FePt(001) and MgO(001) was relaxed in the initial 1 or 2 layers of FePt(001) lattices, which is likely to be true also for two other series of films.« less
  • We report on the growth of highly epitaxial La{sub 2/3}Sr{sub 1/3}MnO{sub 3} thin films on SrTiO{sub 3} (001) oriented substrates by rf magnetron sputtering. It is shown that structural strain caused by lattice mismatch between film and substrate and kinetics growing instabilities may offer unique opportunities to control the film morphologies. By increasing growth rate, the surface morphology undergoes a dramatic transformation: from very smooth surface through arrays of mounds or antidots to hatched morphology. All nano-objects form long-range ordered arrays running in the steps direction defined by the miscut angle of underlying substrate. These self-assembled structures are of highmore » interest envisaging a new route for the fabrication of oxide-based magnetoelectronic devices by using a bottom-up approach.« less