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Title: Online system for temperature and accumulated dose control in plasma-based ion implantation

Abstract

Surface treatment optimization requires the control of the ion dose and the workpiece temperature, two parameters that are not trivially measurable in plasma-based ion implantation. A temperature and ion fluence monitoring system has been developed and implemented in a plasma-based ion implanter. It is based on the measurement with a thermopile of the radiation emitted from the back face of a thin copper disk inserted in the stainless steel sample holder. Since the incident ions carry practically all the incident power, the measurement of the Cu disk temperature that increases during implantation can provide an evaluation of the ion fluence in real time. A model has been developed for the deconvolution of the temperature data and has been fitted to the temperature behavior during implantation. A good agreement between the total integrated doses, evaluated with Rutherford backscattering spectroscopy characterization, and the ion fluence calculated by means of this model has been obtained with a discrepancy less than 16%.

Authors:
; ; ; ; ; ;  [1];  [2];  [2]
+ Show Author Affiliations
  1. INRS-Energie, Materiaux et Telecommunications, Universite du Quebec, 1650 Boulevard Lionel-Boulet, Varennes, Quebec J3X 1S2 (Canada)
  2. (Canada)
Publication Date:
OSTI Identifier:
20953260
Resource Type:
Journal Article
Resource Relation:
Journal Name: Review of Scientific Instruments; Journal Volume: 78; Journal Issue: 2; Other Information: DOI: 10.1063/1.2472601; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CONTROL; COPPER; DOSES; ION IMPLANTATION; IONS; MONITORING; OPTIMIZATION; PLASMA; PROCESSING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SAMPLE HOLDERS; STAINLESS STEELS; SURFACE TREATMENTS

Citation Formats

Roy, F., Abel, G., Terreault, B., Reguer, A., Meunier, J.-L., Bolduc, M., Ross, G. G., Department of Chemical Engineering, McGill University, 3610 University Street, Montreal, Quebec H3A 2B2, and INRS-Energie, Materiaux et Telecommunications, Universite du Quebec, 1650 Boulevard Lionel-Boulet, Varennes, Quebec J3X 1S2. Online system for temperature and accumulated dose control in plasma-based ion implantation. United States: N. p., 2007. Web. doi:10.1063/1.2472601.
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Roy, F., Abel, G., Terreault, B., Reguer, A., Meunier, J.-L., Bolduc, M., Ross, G. G., Department of Chemical Engineering, McGill University, 3610 University Street, Montreal, Quebec H3A 2B2, & INRS-Energie, Materiaux et Telecommunications, Universite du Quebec, 1650 Boulevard Lionel-Boulet, Varennes, Quebec J3X 1S2. Online system for temperature and accumulated dose control in plasma-based ion implantation. United States. doi:10.1063/1.2472601.
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Roy, F., Abel, G., Terreault, B., Reguer, A., Meunier, J.-L., Bolduc, M., Ross, G. G., Department of Chemical Engineering, McGill University, 3610 University Street, Montreal, Quebec H3A 2B2, and INRS-Energie, Materiaux et Telecommunications, Universite du Quebec, 1650 Boulevard Lionel-Boulet, Varennes, Quebec J3X 1S2. Thu . "Online system for temperature and accumulated dose control in plasma-based ion implantation". United States. doi:10.1063/1.2472601.
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@article{osti_20953260,
title = {Online system for temperature and accumulated dose control in plasma-based ion implantation},
author = {Roy, F. and Abel, G. and Terreault, B. and Reguer, A. and Meunier, J.-L. and Bolduc, M. and Ross, G. G. and Department of Chemical Engineering, McGill University, 3610 University Street, Montreal, Quebec H3A 2B2 and INRS-Energie, Materiaux et Telecommunications, Universite du Quebec, 1650 Boulevard Lionel-Boulet, Varennes, Quebec J3X 1S2},
abstractNote = {Surface treatment optimization requires the control of the ion dose and the workpiece temperature, two parameters that are not trivially measurable in plasma-based ion implantation. A temperature and ion fluence monitoring system has been developed and implemented in a plasma-based ion implanter. It is based on the measurement with a thermopile of the radiation emitted from the back face of a thin copper disk inserted in the stainless steel sample holder. Since the incident ions carry practically all the incident power, the measurement of the Cu disk temperature that increases during implantation can provide an evaluation of the ion fluence in real time. A model has been developed for the deconvolution of the temperature data and has been fitted to the temperature behavior during implantation. A good agreement between the total integrated doses, evaluated with Rutherford backscattering spectroscopy characterization, and the ion fluence calculated by means of this model has been obtained with a discrepancy less than 16%.},
doi = {10.1063/1.2472601},
journal = {Review of Scientific Instruments},
number = 2,
volume = 78,
place = {United States},
year = {Thu Feb 15 00:00:00 EST 2007},
month = {Thu Feb 15 00:00:00 EST 2007}
}
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Journal Article:
DOI:  10.1063/1.2472601
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  • - Journal of Applied Physics
    Plasma-based ion implantation of a square bar is modeled using a particle-in-cell plasma simulation for three different size bars. When the sheath width is significantly greater than the bar width, it is found that the incident ion dose is largest at the center of the bar and decreases precipitously at the corners. When the sheath width is comparable to the bar width, the incident dose is largest near to, but not at, the corners. It may be possible to optimize dose uniformity by straddling these two regimes. {copyright} {ital 1997 American Institute of Physics.}

  • ; ; ; ... - Journal of Applied Physics
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  • ; ; ; ... - Medical Physics
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  • ; ; ; ... - IEEE Transactions on Plasma Science
    Plasma immersion ion implantation (PIII) is an effective technique to enhance the surface properties of industrial components possessing an irregular shape. However, it is difficult to achieve uniform implantation along the groove surface of a ball bearing. In this work, the authors focus on the PIII treatment of the arc surface of an industrial ball bearing. Three practical sample placement configurations are investigated: (1) direct placement on the sample stage platen, (2) placement on a copper extension with the same diameter as the bearing race, (3) placement on a copper plate erected on the sample stage by means of amore » small metal rod. Using theoretical simulation, the implant dose uniformity along the groove surface is determined for the three orientations. The results reveal that configuration (3) yields the largest implant dose along the groove surface and the dose uniformity is worse in configuration (1). Hence, in order to improve the lateral dose uniformity along the race surface, the bearing should be elevated from the sample.« less

  • ; ; ; ... - Review of Scientific Instruments
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