Online system for temperature and accumulated dose control in plasma-based ion implantation

doi:10.1063/1.2472601

Title: Online system for temperature and accumulated dose control in plasma-based ion implantation

Full Record
Similar

Abstract

Surface treatment optimization requires the control of the ion dose and the workpiece temperature, two parameters that are not trivially measurable in plasma-based ion implantation. A temperature and ion fluence monitoring system has been developed and implemented in a plasma-based ion implanter. It is based on the measurement with a thermopile of the radiation emitted from the back face of a thin copper disk inserted in the stainless steel sample holder. Since the incident ions carry practically all the incident power, the measurement of the Cu disk temperature that increases during implantation can provide an evaluation of the ion fluence in real time. A model has been developed for the deconvolution of the temperature data and has been fitted to the temperature behavior during implantation. A good agreement between the total integrated doses, evaluated with Rutherford backscattering spectroscopy characterization, and the ion fluence calculated by means of this model has been obtained with a discrepancy less than 16%.

Authors:

Roy, F.; Abel, G.; Terreault, B.; Reguer, A.; Meunier, J.-L.; Bolduc, M.; Ross, G. G. ^[1]; Department of Chemical Engineering, McGill University, 3610 University Street, Montreal, Quebec H3A 2B2 ^[2]; INRS-Energie, Materiaux et Telecommunications, Universite du Quebec, 1650 Boulevard Lionel-Boulet, Varennes, Quebec J3X 1S2 ^[2]

INRS-Energie, Materiaux et Telecommunications, Universite du Quebec, 1650 Boulevard Lionel-Boulet, Varennes, Quebec J3X 1S2 (Canada)
(Canada)

Publication Date:: Thu Feb 15 00:00:00 EST 2007

OSTI Identifier:: 20953260

Resource Type:: Journal Article

Resource Relation:: Journal Name: Review of Scientific Instruments; Journal Volume: 78; Journal Issue: 2; Other Information: DOI: 10.1063/1.2472601; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; CONTROL; COPPER; DOSES; ION IMPLANTATION; IONS; MONITORING; OPTIMIZATION; PLASMA; PROCESSING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SAMPLE HOLDERS; STAINLESS STEELS; SURFACE TREATMENTS

Citation Formats


                    Roy, F., Abel, G., Terreault, B., Reguer, A., Meunier, J.-L., Bolduc, M., Ross, G. G., Department of Chemical Engineering, McGill University, 3610 University Street, Montreal, Quebec H3A 2B2, and INRS-Energie, Materiaux et Telecommunications, Universite du Quebec, 1650 Boulevard Lionel-Boulet, Varennes, Quebec J3X 1S2. Online system for temperature and accumulated dose control in plasma-based ion implantation.  United States: N. p., 2007. 
        Web.  doi:10.1063/1.2472601.

Copy to clipboard


                    Roy, F., Abel, G., Terreault, B., Reguer, A., Meunier, J.-L., Bolduc, M., Ross, G. G., Department of Chemical Engineering, McGill University, 3610 University Street, Montreal, Quebec H3A 2B2, & INRS-Energie, Materiaux et Telecommunications, Universite du Quebec, 1650 Boulevard Lionel-Boulet, Varennes, Quebec J3X 1S2. Online system for temperature and accumulated dose control in plasma-based ion implantation.  United States.  doi:10.1063/1.2472601.

Copy to clipboard


                    Roy, F., Abel, G., Terreault, B., Reguer, A., Meunier, J.-L., Bolduc, M., Ross, G. G., Department of Chemical Engineering, McGill University, 3610 University Street, Montreal, Quebec H3A 2B2, and INRS-Energie, Materiaux et Telecommunications, Universite du Quebec, 1650 Boulevard Lionel-Boulet, Varennes, Quebec J3X 1S2. Thu .  
        "Online system for temperature and accumulated dose control in plasma-based ion implantation".  United States.  
        doi:10.1063/1.2472601.

Copy to clipboard


                    
@article{osti_20953260,

  title        = {Online system for temperature and accumulated dose control in plasma-based ion implantation},

  author       = {Roy, F. and Abel, G. and Terreault, B. and Reguer, A. and Meunier, J.-L. and Bolduc, M. and Ross, G. G. and Department of Chemical Engineering, McGill University, 3610 University Street, Montreal, Quebec H3A 2B2 and INRS-Energie, Materiaux et Telecommunications, Universite du Quebec, 1650 Boulevard Lionel-Boulet, Varennes, Quebec J3X 1S2},

  abstractNote = {Surface treatment optimization requires the control of the ion dose and the workpiece temperature, two parameters that are not trivially measurable in plasma-based ion implantation. A temperature and ion fluence monitoring system has been developed and implemented in a plasma-based ion implanter. It is based on the measurement with a thermopile of the radiation emitted from the back face of a thin copper disk inserted in the stainless steel sample holder. Since the incident ions carry practically all the incident power, the measurement of the Cu disk temperature that increases during implantation can provide an evaluation of the ion fluence in real time. A model has been developed for the deconvolution of the temperature data and has been fitted to the temperature behavior during implantation. A good agreement between the total integrated doses, evaluated with Rutherford backscattering spectroscopy characterization, and the ion fluence calculated by means of this model has been obtained with a discrepancy less than 16%.},

  doi          = {10.1063/1.2472601},

  journal      = {Review of Scientific Instruments},

  number       = 2,

  volume       = 78,

  place        = {United States},

  year         = {Thu Feb 15 00:00:00 EST 2007},

  month        = {Thu Feb 15 00:00:00 EST 2007}

}

Copy to clipboard

Journal Article:

DOI: 10.1063/1.2472601

Other availability

Find in Google Scholar

Search WorldCat to find libraries that may hold this journal

Save / Share:

Export Metadata

Save to My Library

Effect of target size on dose uniformity in plasma-based ion implantation

Sheridan, T.E. - Journal of Applied Physics

Plasma-based ion implantation of a square bar is modeled using a particle-in-cell plasma simulation for three different size bars. When the sheath width is significantly greater than the bar width, it is found that the incident ion dose is largest at the center of the bar and decreases precipitously at the corners. When the sheath width is comparable to the bar width, the incident dose is largest near to, but not at, the corners. It may be possible to optimize dose uniformity by straddling these two regimes. {copyright} {ital 1997 American Institute of Physics.}
DOI: 10.1063/1.365312
Plasma sheath physics and dose uniformity in enhanced glow discharge plasma immersion ion implantation and deposition

Li Liuhe ; Li Jianhui ; Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon ; ... - Journal of Applied Physics

Based on the multiple-grid particle-in-cell code, an advanced simulation model is established to study the sheath physics and dose uniformity along the sample stage in order to provide the theoretical basis for further improvement of enhanced glow discharge plasma immersion ion implantation and deposition. At t=7.0 mus, the expansion of the sheath in the horizontal direction is hindered by the dielectric cage. The electron focusing effect is demonstrated by this model. Most of the ions at the inside wall of the cage are implanted into the edge of the sample stage and a relatively uniform ion fluence distribution with amore »« less
DOI: 10.1063/1.3160309
SU-F-T-474: Evaluation of Dose Perturbation, Temperature and Sensitivity Variation With Accumulated Dose of MOSFET Detector

Ganesan, B ; Prakasarao, A ; Singaravelu, G ; ... - Medical Physics

Purpose: The use of mega voltage gamma and x-ray sources with their skin sparring qualities in radiation therapy has been a boon in relieving patient discomfort and allowing high tumor doses to be given with fewer restrictions due to radiation effects in the skin. However, high doses given to deep tumors may require careful consideration of dose distribution in the buildup region in order to avoid irreparable damage to the skin. Methods: To measure the perturbation of MOSFET detector in Co60,6MV and 15MV the detector was placed on the surface of the phantom covered with the brass build up cap.more »« less
DOI: 10.1118/1.4956659
Influence of sample placement on the dose uniformity in plasma immersion ion implantation of industrial ball bearings

Zeng, Z. ; Tian, X. ; Kwok, D.T.K. ; ... - IEEE Transactions on Plasma Science

Plasma immersion ion implantation (PIII) is an effective technique to enhance the surface properties of industrial components possessing an irregular shape. However, it is difficult to achieve uniform implantation along the groove surface of a ball bearing. In this work, the authors focus on the PIII treatment of the arc surface of an industrial ball bearing. Three practical sample placement configurations are investigated: (1) direct placement on the sample stage platen, (2) placement on a copper extension with the same diameter as the bearing race, (3) placement on a copper plate erected on the sample stage by means of amore »« less
DOI: 10.1109/27.782301
Pure high dose metal ion implantation using the plasma immersion technique

Zhang, T. ; Tang, B.Y. ; Zeng, Z.M. ; ... - Review of Scientific Instruments

High energy implantation of metal ions can be carried out using conventional ion implantation with a mass-selected ion beam in scanned-spot mode by employing a broad-beam approach such as with a vacuum arc ion source, or by utilizing plasma immersion ion implantation with a metal plasma. For many high dose applications, the use of plasma immersion techniques offers a high-rate process, but the formation of a surface film along with the subsurface implanted layer is sometimes a severe or even fatal detriment. We describe here an operating mode of the metal plasma immersion approach by which pure implantation can bemore »« less
DOI: 10.1063/1.1150094