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Title: Online system for temperature and accumulated dose control in plasma-based ion implantation

Abstract

Surface treatment optimization requires the control of the ion dose and the workpiece temperature, two parameters that are not trivially measurable in plasma-based ion implantation. A temperature and ion fluence monitoring system has been developed and implemented in a plasma-based ion implanter. It is based on the measurement with a thermopile of the radiation emitted from the back face of a thin copper disk inserted in the stainless steel sample holder. Since the incident ions carry practically all the incident power, the measurement of the Cu disk temperature that increases during implantation can provide an evaluation of the ion fluence in real time. A model has been developed for the deconvolution of the temperature data and has been fitted to the temperature behavior during implantation. A good agreement between the total integrated doses, evaluated with Rutherford backscattering spectroscopy characterization, and the ion fluence calculated by means of this model has been obtained with a discrepancy less than 16%.

Authors:
; ; ; ; ; ;  [1];  [2];  [2]
  1. INRS-Energie, Materiaux et Telecommunications, Universite du Quebec, 1650 Boulevard Lionel-Boulet, Varennes, Quebec J3X 1S2 (Canada)
  2. (Canada)
Publication Date:
OSTI Identifier:
20953260
Resource Type:
Journal Article
Resource Relation:
Journal Name: Review of Scientific Instruments; Journal Volume: 78; Journal Issue: 2; Other Information: DOI: 10.1063/1.2472601; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CONTROL; COPPER; DOSES; ION IMPLANTATION; IONS; MONITORING; OPTIMIZATION; PLASMA; PROCESSING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SAMPLE HOLDERS; STAINLESS STEELS; SURFACE TREATMENTS

Citation Formats

Roy, F., Abel, G., Terreault, B., Reguer, A., Meunier, J.-L., Bolduc, M., Ross, G. G., Department of Chemical Engineering, McGill University, 3610 University Street, Montreal, Quebec H3A 2B2, and INRS-Energie, Materiaux et Telecommunications, Universite du Quebec, 1650 Boulevard Lionel-Boulet, Varennes, Quebec J3X 1S2. Online system for temperature and accumulated dose control in plasma-based ion implantation. United States: N. p., 2007. Web. doi:10.1063/1.2472601.
Roy, F., Abel, G., Terreault, B., Reguer, A., Meunier, J.-L., Bolduc, M., Ross, G. G., Department of Chemical Engineering, McGill University, 3610 University Street, Montreal, Quebec H3A 2B2, & INRS-Energie, Materiaux et Telecommunications, Universite du Quebec, 1650 Boulevard Lionel-Boulet, Varennes, Quebec J3X 1S2. Online system for temperature and accumulated dose control in plasma-based ion implantation. United States. doi:10.1063/1.2472601.
Roy, F., Abel, G., Terreault, B., Reguer, A., Meunier, J.-L., Bolduc, M., Ross, G. G., Department of Chemical Engineering, McGill University, 3610 University Street, Montreal, Quebec H3A 2B2, and INRS-Energie, Materiaux et Telecommunications, Universite du Quebec, 1650 Boulevard Lionel-Boulet, Varennes, Quebec J3X 1S2. Thu . "Online system for temperature and accumulated dose control in plasma-based ion implantation". United States. doi:10.1063/1.2472601.
@article{osti_20953260,
title = {Online system for temperature and accumulated dose control in plasma-based ion implantation},
author = {Roy, F. and Abel, G. and Terreault, B. and Reguer, A. and Meunier, J.-L. and Bolduc, M. and Ross, G. G. and Department of Chemical Engineering, McGill University, 3610 University Street, Montreal, Quebec H3A 2B2 and INRS-Energie, Materiaux et Telecommunications, Universite du Quebec, 1650 Boulevard Lionel-Boulet, Varennes, Quebec J3X 1S2},
abstractNote = {Surface treatment optimization requires the control of the ion dose and the workpiece temperature, two parameters that are not trivially measurable in plasma-based ion implantation. A temperature and ion fluence monitoring system has been developed and implemented in a plasma-based ion implanter. It is based on the measurement with a thermopile of the radiation emitted from the back face of a thin copper disk inserted in the stainless steel sample holder. Since the incident ions carry practically all the incident power, the measurement of the Cu disk temperature that increases during implantation can provide an evaluation of the ion fluence in real time. A model has been developed for the deconvolution of the temperature data and has been fitted to the temperature behavior during implantation. A good agreement between the total integrated doses, evaluated with Rutherford backscattering spectroscopy characterization, and the ion fluence calculated by means of this model has been obtained with a discrepancy less than 16%.},
doi = {10.1063/1.2472601},
journal = {Review of Scientific Instruments},
number = 2,
volume = 78,
place = {United States},
year = {Thu Feb 15 00:00:00 EST 2007},
month = {Thu Feb 15 00:00:00 EST 2007}
}