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Title: Atomistic View of the Autosurfactant Effect during GaN Epitaxy

Abstract

The Ga-N site exchange critical to the autosurfactant effect during GaN epitaxy is studied. On the GaN(0001) pseudo (1x1), the first site exchange results in N incorporation at the subsurface T{sub 1} site, forming ghost islands. The second exchange that converts these islands to that of bilayer height can be triggered by continued scanning tunneling microscopy imaging, which involves electrons tunneling to or from localized states associated with the second layer Ga. The resulting electrostatic force sets off a chain reaction which frees these Ga atoms, allowing N to form covalent Ga-N-Ga bonds of a new GaN bilayer.

Authors:
; ;  [1]
  1. Department of Physics and Laboratory for Surface Studies, University of Wisconsin, Milwaukee, Wisconsin 53201 (United States)
Publication Date:
OSTI Identifier:
20951380
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review Letters; Journal Volume: 98; Journal Issue: 20; Other Information: DOI: 10.1103/PhysRevLett.98.206106; (c) 2007 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRONS; EPITAXY; GALLIUM NITRIDES; SCANNING TUNNELING MICROSCOPY; TUNNEL EFFECT

Citation Formats

King, S. T., Weinert, M., and Li, L. Atomistic View of the Autosurfactant Effect during GaN Epitaxy. United States: N. p., 2007. Web. doi:10.1103/PHYSREVLETT.98.206106.
King, S. T., Weinert, M., & Li, L. Atomistic View of the Autosurfactant Effect during GaN Epitaxy. United States. doi:10.1103/PHYSREVLETT.98.206106.
King, S. T., Weinert, M., and Li, L. Fri . "Atomistic View of the Autosurfactant Effect during GaN Epitaxy". United States. doi:10.1103/PHYSREVLETT.98.206106.
@article{osti_20951380,
title = {Atomistic View of the Autosurfactant Effect during GaN Epitaxy},
author = {King, S. T. and Weinert, M. and Li, L.},
abstractNote = {The Ga-N site exchange critical to the autosurfactant effect during GaN epitaxy is studied. On the GaN(0001) pseudo (1x1), the first site exchange results in N incorporation at the subsurface T{sub 1} site, forming ghost islands. The second exchange that converts these islands to that of bilayer height can be triggered by continued scanning tunneling microscopy imaging, which involves electrons tunneling to or from localized states associated with the second layer Ga. The resulting electrostatic force sets off a chain reaction which frees these Ga atoms, allowing N to form covalent Ga-N-Ga bonds of a new GaN bilayer.},
doi = {10.1103/PHYSREVLETT.98.206106},
journal = {Physical Review Letters},
number = 20,
volume = 98,
place = {United States},
year = {Fri May 18 00:00:00 EDT 2007},
month = {Fri May 18 00:00:00 EDT 2007}
}