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Title: Epitaxial Silicon Oxynitride Layer on a 6H-SiC(0001) Surface

Abstract

Hydrogen-gas etching of a 6H-SiC(0001) surface and subsequent annealing in nitrogen atmosphere leads to the formation of a silicon oxynitride (SiON) epitaxial layer. A quantitative low-energy electron diffraction analysis revealed that the SiON layer has a hetero-double-layer structure: a silicate monolayer on a silicon nitride monolayer via Si-O-Si bridge bonds. There are no dangling bonds in the unit cell, which explains the fact that the structure is robust against air exposure. Scanning tunneling spectroscopy measured on the SiON layer shows a bulk SiO{sub 2}-like band gap of {approx}9 eV. Great potential of this new epitaxial layer for device applications is described.

Authors:
; ; ;  [1];  [2]; ;  [3]
  1. Department of Molecular and Material Sciences, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan)
  2. Department of Applied Quantum Physics and Nuclear Engineering, Kyushu University, Fukuoka 819-0395 (Japan)
  3. Institute for Solid State Physics, University of Tokyo, Chiba, 277-8581 (Japan)
Publication Date:
OSTI Identifier:
20951194
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review Letters; Journal Volume: 98; Journal Issue: 13; Other Information: DOI: 10.1103/PhysRevLett.98.136105; (c) 2007 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AIR; ANNEALING; ATMOSPHERES; ELECTRON DIFFRACTION; EPITAXY; ETCHING; EV RANGE 01-10; HYDROGEN; LAYERS; NITROGEN; SILICATES; SILICON NITRIDES; SILICON OXIDES; SPECTROSCOPY; TUNNEL EFFECT

Citation Formats

Shirasawa, Tetsuroh, Hayashi, Kenjiro, Mizuno, Seigi, Tochihara, Hiroshi, Tanaka, Satoru, Nakatsuji, Kan, and Komori, Fumio. Epitaxial Silicon Oxynitride Layer on a 6H-SiC(0001) Surface. United States: N. p., 2007. Web. doi:10.1103/PHYSREVLETT.98.136105.
Shirasawa, Tetsuroh, Hayashi, Kenjiro, Mizuno, Seigi, Tochihara, Hiroshi, Tanaka, Satoru, Nakatsuji, Kan, & Komori, Fumio. Epitaxial Silicon Oxynitride Layer on a 6H-SiC(0001) Surface. United States. doi:10.1103/PHYSREVLETT.98.136105.
Shirasawa, Tetsuroh, Hayashi, Kenjiro, Mizuno, Seigi, Tochihara, Hiroshi, Tanaka, Satoru, Nakatsuji, Kan, and Komori, Fumio. Fri . "Epitaxial Silicon Oxynitride Layer on a 6H-SiC(0001) Surface". United States. doi:10.1103/PHYSREVLETT.98.136105.
@article{osti_20951194,
title = {Epitaxial Silicon Oxynitride Layer on a 6H-SiC(0001) Surface},
author = {Shirasawa, Tetsuroh and Hayashi, Kenjiro and Mizuno, Seigi and Tochihara, Hiroshi and Tanaka, Satoru and Nakatsuji, Kan and Komori, Fumio},
abstractNote = {Hydrogen-gas etching of a 6H-SiC(0001) surface and subsequent annealing in nitrogen atmosphere leads to the formation of a silicon oxynitride (SiON) epitaxial layer. A quantitative low-energy electron diffraction analysis revealed that the SiON layer has a hetero-double-layer structure: a silicate monolayer on a silicon nitride monolayer via Si-O-Si bridge bonds. There are no dangling bonds in the unit cell, which explains the fact that the structure is robust against air exposure. Scanning tunneling spectroscopy measured on the SiON layer shows a bulk SiO{sub 2}-like band gap of {approx}9 eV. Great potential of this new epitaxial layer for device applications is described.},
doi = {10.1103/PHYSREVLETT.98.136105},
journal = {Physical Review Letters},
number = 13,
volume = 98,
place = {United States},
year = {Fri Mar 30 00:00:00 EDT 2007},
month = {Fri Mar 30 00:00:00 EDT 2007}
}