Active RF Pulse Compression using Electrically Controlled Semiconductor Switches
- Stanford Linear Accelerator Center, 2575 Sand Hill Rd, Menlo Park, CA 94025 (United States)
In this paper, we present the recent results of our research on the ultra-high power fast silicon RF switch and its application on active X-Band RF pulse compression systems. This switch is composed of a group of PIN diodes on a high purity silicon wafer and has achieved a switching time of 300ns. The wafer is inserted into a cylindrical waveguide operating in the TE01 mode. Switching is performed by injecting carriers into the bulk silicon through a high current pulse. The RF energy is stored in a room-temperature, high-Q 375 ns delay line; it is then extracted out of the line in a short time using the switch. The pulse compression system has achieved a gain of 8, which is the ratio between output and input power.
- OSTI ID:
- 20898682
- Journal Information:
- AIP Conference Proceedings, Vol. 877, Issue 1; Conference: 12. advanced accelerator concepts workshop, Lake Geneva, WI (United States), 10-15 Jul 2006; Other Information: DOI: 10.1063/1.2409146; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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