Stability of 3C-SiC surfaces under diamond growth conditions

Journal Article · Mon Jan 01 00:00:00 EST 2007 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2404786· OSTI ID:20884978

Arnault, J C; Delclos, S; Saada, S; Tranchant, N; Bergonzo, Ph ^[1]

---

1. CEA DSM-DRECAM-SPCSI, 91191 Gif sur Yvette (France)

The present study deals with the interaction of C-terminated c(2x2) and Si-rich 3x2 3C-SiC (100) reconstructed surfaces with a microwave plasma chemical vapor deposition used for diamond growth. Pure hydrogen and hydrogen/methane exposures have been carried out. Their effects on the atomic ordering and the stoichiometry within the first planes have been studied in situ using low energy electron diffraction and electron spectroscopies: x-ray photoelectron spectroscopy, x-ray Auger electron spectroscopy, and ultraviolet photoelectron spectroscopy. 5 min plasma exposures result in a lost of the initial reconstructions, a postplasma oxygen contamination, and strong modifications of the stoichiometry within the first planes. Indeed, the stability of well defined 3C-SiC surfaces depends strongly on their termination: C-terminated surface exhibits a high inertia while the Si-rich surface undergoes partial etching. The three first silicon atomic planes involved in the 3x2 reconstruction are removed upon pure hydrogen plasma while a monolayer is preserved after hydrogen/methane exposure.

• OSTI ID: 20884978
• Journal Information: Journal of Applied Physics, Vol. 101, Issue 1; Other Information: DOI: 10.1063/1.2404786; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AUGER ELECTRON SPECTROSCOPY
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
DIAMONDS
ELECTRON DIFFRACTION
ETCHING
HYDROGEN
METHANE
MICROWAVE RADIATION
MOMENT OF INERTIA
OXYGEN
PLASMA
SEMICONDUCTOR MATERIALS
SILICON
SILICON CARBIDES
STOICHIOMETRY
ULTRAVIOLET RADIATION
X-RAY PHOTOELECTRON SPECTROSCOPY